HP ATF-10100-GP3 Datasheet

0.5 – 12 GHz Low Noise
Gallium Arsenide FET

Technical Data

ATF-10100

Features

• Low Noise Figure:

0.5 dB Typical at 4 GHz

• Low Bias:

VDS = 2 V, IDS␣ =␣ 25 mA

• High Associated Gain:

14.0 dB Typical at 4 GHz

• High Output Power:

21.0 dBm Typical P

at 4 GHz

1 dB

Description

The ATF-10100 is a high perfor­mance gallium arsenide Schottky-

chip. Its premium noise figure
makes this device appropriate for
use in the first stage of low noise
amplifiers operating in the

0.5-12␣ GHz frequency range.

This GaAs FET device has a
nominal 0.3 micron gate length
interconnects between drain
fingers. Total gate periphery is
500␣ microns. Proven gold based
metallization systems and nitride
passivation assure a rugged,
reliable device.

barrier-gate field effect transistor

Electrical Specifications, T

Symbol Parameters and Test Conditions

NF

G

P

A

1 dB

Optimum Noise Figure: VCE = 2 V, IDS = 25 mA f = 2.0 GHz dB 0.4

O

Gain @ NFO; VDS = 2 V, IDS = 25 mA f = 2.0 GHz dB 17.0

Power Output @ 1 dB Gain Compression f = 4.0 GHz dBm 21.0

= 25° C

A

[1]

VDS = 4 V, IDS = 70 mA

G

1 dB

g

m

I

DSS

V

P

Note:

1.

RF performance is determined by packaging and testing 10 devices per wafer

1 dB Compressed Gain: VDS = 4 V, IDS = 70 mA f = 4.0 GHz dB 15.0

Transconductance: VDS = 2 V, VGS = 0 V mmho 80 140

Saturated Drain Current: VDS = 2 V, VGS = 0 V m A 70 130 180

Pinchoff Voltage: VDS = 2 V, IDS = 1 mA V -3.0 -1.3 -0.8

Chip Outline

GG

DSS

Units Min. Typ. Max.

f = 4.0 GHz dB 0.55 0.7
f = 6.0 GHz dB 0.8

f = 4.0 GHz dB 12.0 14.0
f = 6.0 GHz dB 12.0

.

5-19

5965-8702E

ATF-10100 Absolute Maximum Ratings

Absolute

Symbol Parameter Units Maximum

V

DS

V

GS

V

GD

I

DS

P

T

T

CH

T

STG

Drain-Source Voltage V +5
Gate-Source Voltage V -4
Gate-Drain Voltage V -7
Drain Current mA I
Power Dissipation

[2,3]

m W 430

DSS

Channel Temperature ° C 175

Storage Temperature

[4]

°C -65 to +175

Thermal Resistance: θjc = 225°C/W; TCH = 150°C
Liquid Crystal Measurement: 1 µm Spot Size

[4]

Part Number Ordering Information

Part Number Devices Per Tray

ATF-10100-GP3 50

[1]

Notes:

1. Permanent damage may occur if
any of these limits are exceeded.

2. T

CASE TEMPERATURE

= 25° C.

3. Derate at 4.4 mW/° C for

> 78°C.

T

CASE

4. The small spot size of this tech­nique results in a higher, though

more accurate determination of θ

than do alternate methods. See
APPLICATIONS PRIMER IIIA for
more information.

jc

18

ATF-10100 Noise Parameters: V

Freq. NF

GHz dB

O

Mag Ang

= 2 V, IDS = 25 mA

DS

Γ

opt

1.0 0.4 0.78 13 0.40

2.0 0.4 0.55 27 0.29

4.0 0.55 0.39 65 0.22

6.0 0.8 0.41 105 0.16

8.0 1.0 0.46 144 0.10

ATF-10100 Typical Performance, T

G

A

1.5

1.0

(dB)

O

0.5

NF

0

0102030

NF

IDS (mA)

O

Figure 2. Optimum Noise Figure and
Associated Gain vs. I
VDS = 2V, f = 4.0 GHz.

DS.

16

14

12

10

30

(dB)

A

G

20

GAIN (dB)

10

0

1.0 2.0 4.0 6.0

Figure 3. Insertion Power Gain,
Maximum Available Gain and
Maximum Stable Gain vs. Frequency.
V

= 2 V, IDS = 25 mA.

DS

= 25° C

A

2

|S21|

FREQUENCY (GHz)

MSG

RN/50

8.0 10.0 12.0

MAG

G

2.0

1.5

(dB)

1.0

O

NF

0.5

NF

O

0

2.0 6.04.0 8.0 10.0 12.0
FREQUENCY (GHz)

A

Figure 1. Optimum Noise Figure and
Associated Gain vs. Frequency.
VDS = 2V, IDS = 25 mA, TA = 25°C.

30

20

GAIN (dB)

10

0

1.0 2.0 4.0 6.0
FREQUENCY (GHz)

|S21|

MSG

2

MAG

8.0 10.0 12.0

Figure 4. Insertion Power Gain,
Maximum Available Gain and
Maximum Stable Gain vs. Frequency.
VDS = 4 V, IDS = 70 mA.

15

12

(dB)

A

G

9

6

5-20