HIT 2SK2931 Datasheet
2SK2931
Silicon N Channel MOS FET
High Speed Power Switching
Features
• Low on-resistance
RDS =0.010 Ω typ.
• High speed switching
• 4V gate drive device can be driven from 5V source
Outline
ADE-208-554C (Z)
4th. Edition
Jun 1998
TO–220AB
G
D
3
1. Gate
2. Drain
(Flange)
3. Source
1
2
S
2SK2931
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage V
Gate to source voltage V
Drain current I
Drain peak current I
Body-drain diode reverse drain current I
Avalanche current I
Avalanche energy E
Channel dissipation Pch
DSS
GSS
D
D(pulse)
DR
Note3
AP
Note3
AR
Note1
Note2
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Note: 1. PW ≤ 10µs, duty cycle ≤ 1 %
2. Value at Tc = 25°C
3. Value at Tch = 25°C, Rg ≥ 50Ω
60 V
±20 V
45 A
180 A
45 A
45 A
173 mJ
75 W
2
2SK2931
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdown voltage V
Gate to source breakdown voltage V
Gate to source leak current I
Zero gate voltege drain current I
Gate to source cutoff voltage V
Static drain to source on state R
resistance R
(BR)DSS
(BR)GSS
GSS
DSS
GS(off)
DS(on)
DS(on)
60——V I
±20——V I
——±10 µAVGS = ±16V, VDS = 0
——10µAVDS = 60 V, VGS = 0
1.5 — 2.5 V ID = 1mA, VDS = 10V
— 0.010 0.013 Ω ID = 20A, VGS = 10V
— 0.015 0.025 Ω ID = 20A, VGS = 4V
Forward transfer admittance |yfs|2440—S ID = 20A, VDS = 10V
Input capacitance Ciss — 2200 — pF VDS = 10V
Output capacitance Coss — 1050 — pF VGS = 0
Reverse transfer capacitance Crss — 320 — pF f = 1MHz
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Body–drain diode forward voltage V
Body–drain diode reverse
t
d(on)
r
d(off)
f
DF
rr
— 25 — ns ID = 20A, VGS = 10V
— 200 — ns RL = 1.5Ω
— 320 — ns
— 240 — ns
— 0.95 — V IF = 45A, VGS = 0
— 60 — ns IF = 45A, VGS = 0
recovery time
Note: 4. Pulse test
= 10mA, VGS = 0
D
= ±100µA, VDS = 0
G
diF/ dt =50A/µs
Note4
Note4
Note4
3
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