HIT 2SK2928 Datasheet
Features
e
• Low on-resistance
R
= 0.040Ω typ.
DS(on)
• 4V gate drive devices.
• High speed switching
Outline
2SK2928
Silicon N Channel MOS FET
High Speed Power Switching
ADE-208-551B (Z)
3rd. Edition
Jun 1998
TO–220AB
G
D
1
2
S
1. Gate
2. Drain(Flang
3. Source
3
2SK2928
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage V
Gate to source voltage V
Drain current I
Drain peak current I
Body-drain diode reverse drain current I
Avalanche current I
Avalanche energy E
Channel dissipation Pch
DSS
GSS
D
D(pulse)
DR
Note3
AP
Note3
AR
Note1
Note2
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Note: 1. PW ≤ 10µs, duty cycle ≤ 1 %
2. Value at Ta = 25°C
3. Value at Tch = 25°C, Rg ≥ 50 Ω
60 V
±20 V
15 A
60 A
15 A
15 A
19 mJ
40 W
2
2SK2928
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdown voltage V
Gate to source breakdown voltage V
Zero gate voltege drain current I
Gate to source leak current I
Gate to source cutoff voltage V
Static drain to source on state R
resistance R
(BR)DSS
(BR)GSS
DSS
GSS
GS(off)
DS(on)
DS(on)
60——V I
±20——V I
——10µAVDS = 60 V, VGS = 0
——±10 µAVGS = ±16V, VDS = 0
1.5 — 2.5 V ID = 1mA, VDS = 10V
— 0.040 0.052 Ω ID = 8A, VGS = 10V
— 0.060 0.105 Ω ID = 8A, VGS = 4V
Forward transfer admittance |yfs| 7 11 — S ID = 8A, VDS = 10V
Input capacitance Ciss — 500 — pF VDS = 10V
Output capacitance Coss — 260 — pF VGS = 0
Reverse transfer capacitance Crss — 110 — pF f = 1MHz
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Body–drain diode forward voltage V
Body–drain diode reverse recovery
t
d(on)
r
d(off)
f
DF
rr
— 10 — ns VGS = 10V, ID = 8A
— 80 — ns RL = 3.75Ω
— 100 — ns
— 110 — ns
— 0.9 — V IF = 15A, VGS = 0
— 50 — ns IF = 15A, VGS = 0
time
Note: 4. Pulse test
= 10mA, VGS = 0
D
= ±100µA, VDS = 0
G
diF/ dt =50A/µs
Note4
Note4
Note4
3
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