HIT 2SK2926-S, 2SK2926-L Datasheet
2SK2926(L), 2SK2926(S)
Silicon N Channel MOS FET
High Speed Power Switching
ADE-208-535
1st. Edition
Features
• Low on-resistance
R
DS(on)
= 0.042Ω typ.
• 4V gate drive devices.
• High speed switching
Outline
1
2
3
4
4
1
2
3
1. Gate
2. Drain
3. Source
4. Drain
DPAK–2
D
G
S
2SK2926(L), 2SK2926(S)
2
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage V
DSS
60 V
Gate to source voltage V
GSS
±20 V
Drain current I
D
15 A
Drain peak current I
D(pulse)
*
1
60 A
Body to drain diode reverse drain current I
DR
15 A
Avalanche current IAP*
3
15 A
Avalanche energy EAR*
3
19 mJ
Channel dissipation Pch*
2
25 W
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Notes: 1. PW ≤ 10µs, duty cycle ≤ 1 %
2. Value at Ta = 25°C
3. Value at Ta = 25°C, Rg ≥ 50 Ω
2SK2926(L), 2SK2926(S)
3
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdown
voltage
V
(BR)DSS
60——V I
D
= 10mA, VGS = 0
Gate to source breakdown
voltage
V
(BR)GSS
±20——V I
G
= ±100µA, VDS = 0
Zero gate voltege drain
current
I
DSS
——10µAV
DS
= 60 V, VGS = 0
Gate to source leak current I
GSS
——±10 µAV
GS
= ±16V, VDS = 0
Gate to source cutoff voltage V
GS(off)
1.5 — 2.5 V ID = 1mA, VDS = 10V
Static drain to source on state R
DS(on)
— 0.042 0.055 Ω ID = 8A, VGS = 10V*
1
resistance R
DS(on)
— 0.065 0.11 Ω ID = 8A, VGS = 4V*
1
Forward transfer admittance |yfs| 7 11 — S ID = 8A, VDS = 10V*
1
Input capacitance Ciss — 500 — pF VDS = 10V
Output capacitance Coss — 260 — pF VGS = 0
Reverse transfer capacitance Crss — 110 — pF f = 1MHz
Turn-on delay time t
d(on)
— 10 — ns VGS = 10V, ID = 8A
Rise time t
r
— 80 — ns RL = 3.75Ω
Turn-off delay time t
d(off)
— 100 — ns
Fall time t
f
— 110 — ns
Body to drain diode forward
voltage
V
DF
— 1.0 — V IF = 15A, VGS = 0
Body to drain diode reverse
recovery time
t
rr
— 55 — ns IF = 15A, VGS = 0
diF/ dt = 50A/µs
Note: 1. Pulse test
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