HIT 2SK2912-S, 2SK2912-L Datasheet
2SK2912(L), 2SK2912(S)
Silicon N Channel MOS FET
High Speed Power Switching
ADE-208-495
1st. Edition
Features
• Low on-resistance
RDS = 15 mΩ typ.
• High speed switching
• 4V gate drive device can be driven from 5V source
Outline
1. Gate
2. Drain
3. Source
4. Drain
1
2
3
4
1
2
3
4
LDPAK
G
D
S
2SK2912(L), 2SK2912(S)
2
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage V
DSS
60 V
Gate to source voltage V
GSS
±20 V
Drain current I
D
40 A
Drain peak current I
D(pulse)
*
1
160 A
Body to drain diode reverse drain current I
DR
40 A
Avalanche current IAP*
3
40 A
Avalanche Energy EAR*
3
137 mJ
Channel dissipation Pch*
2
50 W
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Notes: 1. PW ≤ 10µs, duty cycle ≤ 1 %
2. Value at Tc = 25°C
3. Value at Tch = 25°C, Rg ≥ 50 Ω
2SK2912(L), 2SK2912(S)
3
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdown
voltage
V
(BR)DSS
60——V I
D
= 10mA, VGS = 0
Gate to source breakdown
voltage
V
(BR)GSS
±20——V I
G
= ±100µA, VDS = 0
Gate to source leak current I
GSS
——±10 µAV
GS
= ±16V, VDS = 0
Zero gate voltege drain
current
I
DSS
——10µAV
DS
= 60 V, VGS = 0
Gate to source cutoff voltage V
GS(off)
1.5 — 2.5 V ID = 1mA, VDS = 10V
Static drain to source on state R
DS(on)
—1520mΩI
D
= 20A, VGS = 10V*
1
resistance R
DS(on)
—2540mΩI
D
= 20A, VGS = 4V*
1
Forward transfer admittance |yfs|2035—SI
D
= 20A, VDS = 10V*
1
Input capacitance Ciss — 1500 — pF VDS = 10V
Output capacitance Coss — 720 — pF VGS = 0
Reverse transfer capacitance Crss — 200 — pF f = 1MHz
Turn-on delay time t
d(on)
— 20 — ns ID = 20A, VGS = 10V
Rise time t
r
— 180 — ns RL = 1.5Ω
Turn-off delay time t
d(off)
— 200 — ns
Fall time t
f
— 200 — ns
Body to drain diode forward
voltage
V
DF
— 0.95 — V IF = 40A, VGS = 0
Body to drain diode reverse
recovery time
t
rr
—70—V I
F
= 40A, VGS = 0
diF/ dt = 50A/µs
Note: 1. Pulse test
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