HIT 2SK291 Datasheet
Silicon N-Channel Junction FET
Application
Low frequency low noise amplifier
Outline
TO-92 (2)
2SK291
1. Drain
2. Source
3. Gate
3
2
1
2SK291
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Gate to drain voltage V
Gate to source voltage V
Drain current I
Gate current I
GDO
GSO
D
G
Channel power dissipation Pch 300 mW
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Gate to drain breakdown
V
(BR)GDO
voltage
Gate to source breakdown
V
(BR)GSO
voltage
Gate cutoff current I
Drain current I
Gate to source cutoff voltage V
GSS
DSS
GS(off)
Forward transfer admittance |yfs| 25 45 — mS V
Input capacitance Ciss — 8.5 — pF V
Noise voltage referred to input e
n
Note: 1. The 2SK291 is grouped by I
Grade P Q R S T
I
DSS
5 to 16 14 to 24 20 to 32 28 to 42 36 to 50
–15 — — V IG = –100 µA
–15 — — V IG = –100 µA
— — 10 nA VGS = –7 V, VDS = 0
1
*
5 — 50 mA VDS = 5 V, VGS = 0
— — –3.0 V V
— 1.2 — nV/√Hz V
as follows.
DSS
–15 V
–15 V
50 mA
5mA
= 5 V, ID = 100 µA
DS
= 5 V, VGS = 0, f = 1 kHz
DS
= 5 V, VGS = 0, f = 1 MHz
DS
= 5 V, ID = 5 mA, Rg = 0,
DS
f = 100 kHz
2
2SK291
Maximum Channel Power
Dissipation Curve
450
(mW)
ch
300
150
Channel Power Dissipation P
0
50 100 150
Ambient Temperature Ta (°C)
Typical Transfer Characteristics
30
VDS = 5 V
20
(mA)
D
Typical Output Characteristics
30
VDS = 5 V
= 0 V
V
GS
20
(mA)
D
–0.1
–0.2
–0.3
10
Drain Current I
–0.4
–0.5
–0.6
–0.8
0 246
Drain to Source Voltage V
DS
(V)
Forward Transfer Admittance vs.
Drain to Source Voltage
60
VDS = 5 V
(mS)
f = 1 kHz
50
fs
40
10
Drain Current I
0
–2.0 –1.2–1.6 –0.8 0–0.4
Gate to Source Voltage V
GS
(V)
30
20
10
0
Forward Transfer Admittance y
–2.0 –1.2–1.6 –0.8 0–0.4
Gate to Source Voltage V
GS
(V)
3
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