HIT 2SC4900 Datasheet
2SC4900
Silicon NPN Epitaxial
Application
VHF / UHF wide band amplifier
Features
• High gain bandwidth product
fT = 9 GHz Typ
• High gain, low noise figure
PG = 13.0 dB Typ, NF = 1.2 dB Typ at f = 900 MHz
Outline
MPAK-4
2
3
1
4
1. Collector
2. Emitter
3. Base
4. Emitter
2SC4900
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector current I
Collector power dissipation P
CBO
CEO
EBO
C
C
Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Collector to base breakdown
V
(BR)CBO
voltage
Collector cutoff current I
Emitter cutoff current I
DC current transfer ratio h
CBO
I
CEO
EBO
FE
Collector output capacitance Cob — 0.8 1.3 pF VCB = 5 V, IE = 0, f = 1 MHz
Gain bandwidth product f
T
Power gain PG 10.5 13.5 — dB VCE = 5 V, IC = 20 mA,
Noise figure NF — 1.2 2.5 dB VCE = 5 V, IC = 5 mA,
Note: Marking is “YJ–”.
15——V I
——10µAVCB = 12 V, IE = 0
——1 mAV
——10µAVEB = 1.5 V, IC = 0
50 120 250 VCE = 5 V, IC = 20 mA
6.0 9.0 — GHz VCE = 5 V, IC = 20 mA
15 V
9V
1.5 V
50 mA
150 mW
= 10 µA, IE = 0
C
= 9 V, RBE = ∞
CE
f = 900 MHz
f = 900 MHz
2
Maximum Collector Dissipation Curve
150
(mW)
C
100
50
Collector Power Dissipation P
0
Ambient Temperature Ta (°C)
2SC4900
DC Current Transfer Ratio
vs. Collector Current
200
V = 5V
CE
FE
160
120
80
40
DC Current Transfer Ratio h
0
0.1
15010050
0.2 0.5 1 2 5 10 20 50
Collector Current I (mA)
C
Gain Bandwidth Product
vs. Collector Current
12
V = 5 V
CE
10
T
8
6
4
2
Gain Bandwidth Product f (GHz)
0
12 51020 50
Collector Current I (mA)
C
Collector Output Capacitance vs.
Collector to Base Voltage
1.6
I = 0
E
f = 1 MHz
1.4
1.2
1.0
0.8
Collector Output Capacitance Cob (pF)
0.6
0.5
12 51020
Collector to Base Voltage V (V)
CB
3
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