HIT 2SC4829 Datasheet
2SC4829
Silicon NPN Epitaxial
Application
High frequency amplifier
Features
• High frequency characteristics
fT = 1100 MHz Typ
• High voltage and small output capacitance
V
= 100 V, Cob = 4.2 pF Typ
CEO
• Suitable for wide band video amplifier
Outline
TO-92MOD
1. Emitter
2. Collector
3. Base
3
2
1
2SC4829
Ordering Information
h
FE
2SC4829B 60 to 120
2SC4829C 100 to 200
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector current I
Collector peak current i
Collector power dissipation P
CBO
CEO
EBO
C
C (peak)
C
Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C
100 V
100 V
3V
0.2 A
0.5 A
0.9 W
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Collector to base breakdown
V
(BR)CBO
voltage
Collector to emitter breakdown
V
(BR)CEO
voltage
Emitter cutoff current I
Collector cutoff current I
DC current
2SC4829B h
EBO
CBO
FE
transfer ratio
2SC4829C h
Base to emitter voltage V
Collector to emitter saturation
V
FE
BE
CE(sat)
voltage
Gain bandwidth product f
T
Collector output capacitance Cob — 4.2 6.0 pF VCB = 30 V, IE = 0, f = 1 MHz
100 — — V IC = 10 µA, IE = 0
100 — — V IC = 1 mA, RBE = ∞
——10µAVEB = 3 V, IC = 0
— — 1.0 µAVCB = 80 V, IE = 0
60 — 120 VCE = 10 V, IC = 10 mA
100 — 200
— — 1.0 V VCE = 10 V, IC = 10 mA
— — 1.0 V IC = 100 mA, IB = 10 mA
800 1100 — MHz VCE = 10 V, IE = 100 mA
2
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