HIT 2SC1212, 2SC1212A Datasheet
2SC1212, 2SC1212A
Application
Low frequency power amplifier
Outline
TO-126 MOD
Silicon NPN Epitaxial
1. Emitter
2. Collector
1
2
3
3. Base
Absolute Maximum Ratings (Ta = 25°C)
Ratings
Item Symbol 2SC1212 2SC1212A Unit
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector current I
Collector power dissipation P
Junction temperature Tj 150 150 °C
Storage temperature Tstg –55 to +150 –55 to +150 °C
Note: 1. Value at TC = 25°C
C
PC*
CBO
CEO
EBO
C
1
50 80 V
50 80 V
44V
11A
0.75 0.75 W
88W
2SC1212, 2SC1212A
Electrical Characteristics (Ta = 25°C)
2SC1212 2SC1212A
Item Symbol Min Typ Max Min Typ Max Unit Test conditions
Collector to base
breakdown voltage
Collector to emitter
breakdown voltage
Emitter to base
breakdown voltage
Collector cutoff current I
DC current tarnsfer ratio hFE*
Base to emitter voltage V
Collector to emitter
saturation voltage
Gain bandwidth product f
Note: 1. The 2SC1212 and 2SC1212A are grouped by hFE as follows.
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
CBO
h
FE
BE
V
CE(sat)
T
50 — — 80 — — V IC = 1 mA, IE = 0
50 — — 80 — — V IC = 10 mA, RBE = ∞
4 ——4 ——V IE = 1 mA, IC = 0
——5 ——5 µAVCB = 50 V, IE = 0
1
60 — 200 60 — 200 VCE = 4 V, IC = 50 mA
20 — — 20 — — VCE = 4 V, IC = 1 A
(pulse test)
— 0.65 1.0 — 0.65 1.0 V VCE = 4 V, IC = 50 mA
— 0.75 1.5 — 0.75 1.5 V IC = 1 A, IB = 0.1 A
(pulse test)
— 160 — — 160 — MHz VCE = 4 V, IC = 30 mA
BC
60 to 120 100 to 200
Maximum Collector Dissipation Curve
1.0
(W)
C
0.75
0.5
0.25
Collector power dissipation P
0 50 100 200150
Ambient temperature Ta (°C)
Maximum Collector Dissipation Curve
12
(W)
C
8
4
Collector power dissipation P
0 50 100 150
Case temperature T
(°C)
C
2
Loading...