HIT 2SC1162 Datasheet
2SC1162
Silicon NPN Epitaxial
Application
Low frequency power amplifier complementary pair with 2SA715
Outline
TO-126 MOD
1. Emitter
2. Collector
1
2
3
3. Base
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector current I
Collector peak current I
Collector power dissipation P
Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C
Note: 1. Value at TC = 25°C.
CBO
CEO
EBO
C
C(peak)
C
PC*
1
35 V
35 V
5V
2.5 A
3A
0.75 W
10 W
2SC1162
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Collector to base breakdown
V
(BR)CBO
voltage
Collector to emitter breakdown
V
(BR)CEO
voltage
Emitter to base breakdown
V
(BR)EBO
voltage
Collector cutoff current I
CBO
DC current transfer ratio hFE*
h
FE
Base to emitter voltage V
Collector to emitter saturation
V
BE
CE(sat)
voltage
Gain bandwidth product f
T
Note: 1. The 2SC1162 is grouped by hFE as follows.
35 — — V IC = 1 mA, IE = 0
35 — — V IC = 10 mA, RBE = ∞
5——VI
= 1 mA, IC = 0
E
——20µAVCB = 35 V, IE = 0
1
60 — 320 VCE = 2 V, IC = 0.5 A
20 — — VCE = 2 V, IC = 1.5 A
(pulse test)
— 0.93 1.5 V VCE = 2 V, IC = 1.5 A
(pulse test)
— 0.5 1.0 V IC = 2 A, IB = 0.2 A (pulse test)
— 180 — MHz VCE = 2 V, IC = 0.2 A
BCD
60 to 120 100 to 200 160 to 320
Maximum Collector Dissipation Curve
0.8
(W)
C
0.6
0.4
0.2
Collector power dissipation P
0.75
0 50 100 150 200
Ambient temperature Ta (°C)
5
2
(A)
C
1.0
0.5
Collector current I
0.2
0.1
12 10
Area of Safe Operation
I
(DC Operation)
C(max)
P
C
= 10 W
52050
Collector to emitter voltage V
TC = 25°C
(V)
CE
2
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