HIT 2SB955(K) Datasheet
2SB955(K)
Silicon PNP Triple Diffused
Application
Power switching complementary pair with 2SD1126(K)
Outline
TO-220AB
1.0 kΩ
(Typ)
200 Ω
(Typ)
1
2
3
1. Base
2. Collector
(Flange)
3. Emitter
1
2
3
I
D
2SB955(K)
2
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Rating Unit
Collector to base voltage V
CBO
–120 V
Collector to emitter voltage V
CEO
–120 V
Emitter to base voltage V
EBO
–7 V
Collector current I
C
–10 A
Collector peak current I
C(peak)
–15 A
C to E diode forward current ID*
1
10 A
Collector power dissipation PC*
2
50 W
Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C
Notes: 1. Value at TC = 25°C
2. PW ≤ 1 ms 1 shot
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Collector to emitter breakdown
voltage
V
(BR)CEO
–120 — — V IC = –25 mA, RBE = ∞
Emitter to base breakdown
voltage
V
(BR)EBO
–7 — — V IE = –200 mA, IC = 0
Collector cutoff current I
CBO
— — –100 µAV
CB
= –120 V, IE = 0
I
CEO
— — –10 µAV
CE
= –100 V, RBE = ∞
DC current transfer ratio h
FE
1000 — 20000 VCE = –3 V, IC = –5 A*
1
Collector to emitter saturation V
CE(sat)1
— — –1.5 V IC = –5 A, IB = –10 mA*
1
voltage V
CE(sat)2
— — –3.0 V IC = –10 A, IB = –0.1 A*
1
Base to emitter saturation V
BE(sat)1
— — –2.0 V IC = –5 A, IB = –10 mA*
1
voltage V
BE(sat)2
— — –3.5 V IC = –10 A, IB = –0.1 A*
1
C to E diode forward voltage V
D
— — 3.0 V ID = 10 A*
1
Turn on time t
on
— 0.8 — µsV
CC
= –30 V
Turn off time t
off
— 4.0 — µsI
C
= –5 A, IB1 = –IB2 = –10 mA
Note: 1. Pulse test
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