HIT 2SB860 Datasheet
2SB860
Silicon PNP Triple Diffused
Application
Low frequency power amplifier TV vertical deflection output complementary pair with 2SD1137
Outline
TO-220AB
1. Base
2. Collector
1
2
3
(Flange)
3. Emitter
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Rating Unit
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector current I
Collector peak current I
Collector power dissipation P
CBO
CEO
EBO
C
C(peak)
C
PC*
1
Junction temperature Tj 150 °C
Storage temperature Tstg –45 to +150 °C
Note: 1. Value at TC = 25°C
–100 V
–100 V
–4 V
–4 A
–5 A
1.8 W
40 W
2SB860
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Collector to emitter breakdown
voltage
Emitter to base breakdown
voltage
Collector cutoff current I
Emitter cutoff current I
Collector to emitter saturation
voltage
DC current transfer ratio h
Note: 1. Pulse test
V
(BR)CEO
V
(BR)EBO
CEO
EBO
V
CE(sat)
FE
–100 — — V IC = –10 mA, RBE = ∞
–4 — — V IE = –1 mA, IC = 0
— — –100 µAVCE = –80 V, RBE = ∞
— — –50 µAVEB = –3.5 V, IC = 0
— — –1.0 V IC = –1 A, IB = –0.1 A*
50 — 250 VCE = –4 V IC = –0.5 A*
25 — 350 IC = –50 mA
1
1
Maximum Collector Dissepation
Curve
60
(W)
C
40
20
Collector power dissipaition P
050
Case temperature T
100
(°C)
C
150
–10
I
Cmax
–3
(A)
C
–1.0
–0.3
–0.1
TC = 25°C
DC Operation
Collector current I
–0.03
–0.01
–1 –10 –100 –1,000–3 –30
Collector to emitter voltage V
Area of Safe Operation
(–10 V, –4 A)
(–40 V, –1 A)
(–100 V, –50 mA)
–300
CE
(V)
2
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