HIT 2SB859 Datasheet
2SB859
Silicon PNP Triple Diffused
Application
Low frequency power amplifier complementary pair with 2SD1135
Outline
TO-220AB
1. Base
2. Collector
1
2
3
(Flange)
3. Emitter
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Rating Unit
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector current I
Collector peak current I
Collector power dissipation PC*
Junction temperature Tj 150 °C
Storage temperature Tstg –45 to +150 °C
Note: 1. Value at TC = 25°C
CBO
CEO
EBO
C
C(peak)
1
–100 V
–80 V
–5 V
–4 A
–8 A
40 W
2SB859
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Collector to emitter breakdown
V
(BR)CEO
voltage
Emitter to base breakdown
V
(BR)EBO
voltage
Collector cutoff current I
DC current transfer ratio h
Base to emitter voltage V
Collector to emitter saturation
h
V
CBO
FE1
FE2
BE
CE(sat)
voltage
Gain bandwidth product f
T
Collector output capacitance Cob — 75 — pF VCB = –20 V, IE = 0, f = 1 MHz
Notes: 1. The 2SB859 is grouped by h
2. Pulse test
BC
60 to 120 100 to 200
–80 — — V IC = –50 mA, RBE = ∞
–5 — — V IE = –10 µA, IC = 0
— — –0.1 mA VCB = –80 V, IE = 0
1
*
60 — 200 VCE = –5 V, IC = –1 A*
35 — — VCE = –5 V, IC = –0.1 A*
— — –1.5 V VCE = –5 V, IC = –1 A*
——–2V I
= –2 A, IB = –0.2 A*
C
— 20 — MHz VCE = –5 V, IC = –0.5 A*
as follows.
FE1
2
2
2
2
2
Maximum Collector Dissipation
Curve
60
(W)
C
40
20
Collector power dissipation P
0 50 100 150
Case temperature TC (°C)
–5
Area of Safe Operation
IC max(Continuous)
DC Operation
–2
(A)
C
TC = 25°C
–1.0
–0.5
–0.2
Collector current I
–0.1
–0.05
–1 –5 –20 –100–2 –10 –50
Collector to emitter voltage V
(–10 V, –4 A)
(–33 V, –12 A)
(–80 V, –0.06 A)
(V)
CE
2
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