HIT 2SB858, 2SB857 Datasheet
2SB857, 2SB858
Silicon PNP Triple Diffused
Application
Low frequency power amplifier complementary pair with 2SD1133 and 2SD1134
Outline
TO-220AB
1. Base
2. Collector
1
2
3
(Flange)
3. Emitter
Absolute Maximum Ratings (Ta = 25°C)
Ratings
Item Symbol 2SB857 2SB858 Unit
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector current I
Collector peak current I
Collector power dissipation PC*
Junction temperature Tj 150 150 °C
Storage temperature Tstg –45 to +150 –45 to +150 °C
Note: 1. Value at TC = 25°C
CBO
CEO
EBO
C
C(peak)
1
–70 –70 V
–50 –60 V
–5 –5 V
–4 –4 A
–8 –8 A
40 40 W
2SB857, 2SB858
Electrical Characteristics (Ta = 25°C)
2SB857 2SB858
Item Symbol Min Typ Max Min Typ Max Unit Test conditions
Collector to base
breakdown voltage
Collector to emitter
breakdown voltage
Emitter to base
breakdown voltage
Collector cutoff current I
DC current transfer ratio h
Collector to emitter
saturation voltage
Base to emitter voltage V
Gain bandwidth product f
Notes: 1. The 2SB857 and 2SB858 are grouped by h
2. Pulse test
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
CBO
FE1
h
FE2
V
CE(sat)
BE
T
–70 — — –70 — — V IC = –10 µA, IE = 0
–50 — — –60 — — V IC = –50 mA, RBE = ∞
–5 — — –5 — — V IE = –10 µA, IC = 0
——–1——–1µAVCB = –50 V, IE = 0
1
*
60 — 320 60 — 320 VCE =IC = –1 A*
35 — — 35 — — –4 V IC = –0.1 A*
——–1——–1V IC = –2 A, IB = –0.2 A*
——–1——–1V VCE = –4 V, IC = –1 A*
—15——15—MHzVCE = –4 V,
I
= –0.5 A*
C
as follows.
FE1
2
2
2
2
2
BCD
60 to 120 100 to 200 160 to 320
Maximum Collector Dissipation Curve
60
40
20
Collector power dissipation Pc (W)
0 50 100 150
Case Temperature T
(°C)
C
Area of Safe Operation
–5
IC
max
(Continuous)
(–10 V, –4 A)
DC Operation
–2
T
(A)
C
–1.0
= 25°C
C
(–20 V, –2 A)
–0.5
(–50 V, –0.24 A)
–0.2
Collector Current I
–0.1
2SB857
2SB858
–0.05
–1 –2 –5 –10 –20 –50 –100
Collector to emitter Voltage V
(–60 V, –0.15 A)
(V)
CE
2
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