HIT 2SB831 Datasheet

Silicon PNP Epitaxial

Application

• Low frequency amplifier

• Complementary pair with 2SD1101

Outline

MPAK

2SB831

3

1

2

1. Emitter

2. Base

3. Collector

2SB831

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector current I
Collector peak current i
Collector power dissipation P

CBO

CEO

EBO

C

C(peak)

C

Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test conditions

Collector to base breakdown

V

(BR)CBO

voltage
Collector to emitter breakdown

V

(BR)CEO

voltage
Emitter to base breakdown

V

(BR)EBO

voltage
Collector cutoff current I

CBO

DC current transfer ratio hFE*
Collector to emitter saturation

V

CE(sat)

voltage
Base to emitter voltage V

BE

Notes: 1. The 2SB831 is grouped by hFE as follows.

2. Pulse test

Grade B C

Mark BB BC
h

FE

85 to 170 120 to 240

–25 — — V IC = –10 µA, IE = 0

–20 — — V IC = –1 mA, RBE = ∞

–5——V I

— — –1.0 µAVCB = –20 V, IE = 0

1

85 — 240 VCE = –1 V, IC = –0.15 A*
— — –0.5 V IC = –0.5 A, IB = –0.05 A*

— — –1.0 V VCE = –1 V, IC = –0.15 A*

–25 V
–20 V
–5 V
–0.7 A
–1 A
150 mW

= –10 µA, IC = 0

E

2

2

2

See characteristic curves of 2SB561.

2