HIT 2SB739, 2SB738 Datasheet
2SB738, 2SB739
Silicon PNP Epitaxial
Application
• Low frequency power amplifier
• Complementary pair with 2SD787 and 2SD788
Outline
TO-92MOD
1. Emitter
2. Collector
3. Base
3
2
1
2SB738, 2SB739
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol 2SB738 2SB739 Unit
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector current I
Collector power dissipation P
CBO
CEO
EBO
C
C
Junction temperature Tj 150 150 °C
Storage temperature Tstg –55 to +150 –55 to +150 °C
Electrical Characteristics (Ta = 25°C)
2SB738 2SB739
Item Symbol Min Typ Max Min Typ Max Unit Test conditions
Collector to base
breakdown voltage
Collector to emitter
breakdown voltage
Emitter to base breakdown
voltage
Collector cutoff current I
Emitter cutoff current I
DC current transfer ratio hFE*
Collector to emitter
saturation voltage
Gain bandwidth product f
Collector output capacitance Cob — 50 — — 50 — pF VCB = –10 V, IE = 0,
Note: 1. The 2SB738 and 2SB739 are grouped by hFE as follows.
BC
100 to 200 160 to 320
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
CBO
EBO
V
CE(sat)
T
–20 — — –20 — — V IC = –10 µA, IE = 0
–16 — — –20 — — V IC = –1 mA, RBE = ∞
–6 — — –6 — — V IE = –10 µA, IC = 0
— — –2 — — –2 µAVCB = –16 V, IE = 0
— — –0.2 — — –0.2 µAVEB = –6 V, IC = 0
1
100 — 320 100 — 320 VCE = –2 V, IC = –0.1 A
— — –0.3 — — –0.3 V IC = –1 A, IB = –0.1 A
— 150 — — 150 — MHz VCE = –2 V, IC = –10 mA
–20 –20 V
–16 –20 V
–6 –6 V
–2 –2 A
0.9 0.9 W
f = 1 MHz
2
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