HIT 2SB727(K) Datasheet
2SB727(K)
Silicon PNP Epitaxial
Application
Medium speed and power switching complementary pair with 2SD768(K)
Outline
TO-220AB
1 kΩ
(Typ)
400 Ω
(Typ)
1
2
3
1. Base
2. Collector
(Flange)
3. Emitter
1
2
3
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Rating Unit
Collector to base voltage V
CBO
–120 V
Collector to emitter voltage V
CEO
–120 V
Emitter to base voltage V
EBO
–7 V
Collector current I
C
–6 A
Collector peak current I
C(peak)
–10 A
Collector power dissipation PC*
1
40 W
Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C
Note: 1. Value at TC = 25°C
2SB727(K)
2
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Collector to emitter breakdown
voltage
V
(BR)CEO
–120 — — V IC = –25 mA, RBE = ∞
Emitter to base breakdown
voltage
V
(BR)EBO
–7 — — V IE = –50 mA, IC = 0
Collector cutoff current I
CBO
— — –100 µAV
CB
= –120 V, IE = 0
I
CEO
— — –10 µAV
CE
= –100 V, RBE = ∞
DC current transfer ratio h
FE
1000 — 20000 VCE = –3 V, IC = –3 A*
1
Collector to emitter saturation V
CE(sat)1
— — –1.5 V IC = –3 A, IB = –6 mA*
1
voltage V
CE(sat)2
— — –3.0 V IC = –6 A, IB = –60 mA*
1
Base to emitter saturation V
BE(sat)1
— — –2.0 V IC = –3 A, IB = –6 mA*
1
voltage V
BE(sat)2
— — –3.5 V IC = –6 A, IB = –60 mA*
1
Turn on time t
on
— 1.0 — µsI
C
= –3 A, IB1 = –IB2 = –6 mA
Turn off time t
off
— 3.0 — µs
Note: 1. Pulse test
0 50 100 150
Case Temperature T
C
(°C)
Collector power dissipation Pc (W)
20
60
40
Maximum Collector Dissipation Curve
–0.03
–0.1
–0.3
–1.0
–3
–30
–10
Collector to emitter Voltage V
CE
(V)
Collector Current I
C
(A)
–1 –3 –10 –30 –100 –300 –1,000
Area of Safe Operation
IC
(max)
(Continuous)
i
C (peak)
Ta = 25°C
1 Shot pulse
DC Operation
(T
C
= 25°C)
PW = 10 ms
1 ms
100 µs
1 µs
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