HIT 2SB1027 Datasheet
Application
Low frequency amplifier
Outline
UPAK
2SB1027
Silicon PNP Epitaxial
1
2
3
4
1. Base
2. Collector
3. Emitter
4. Collector (Flange)
2SB1027
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector current I
Collector peak current i
Collector power dissipation PC*
CBO
CEO
EBO
C
C(peak)
1
*
2
Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C
Notes: 1. PW ≤ 10 ms, Duty cycle ≤ 20%
2. Value on the alumina ceramic board (12.5 × 20 × 0.7 mm)
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Collector to base breakdown
V
(BR)CBO
voltage
Collector to emitter breakdown
V
(BR)CEO
voltage
Emitter to base breakdown
V
(BR)EBO
voltage
Collector cutoff current I
DC current transfer ratio h
Collector to emitter saturation
h
V
CBO
FE1
FE2
CE(sat)
voltage
Base to emitter voltage V
BE
Note: 1. The 2SB1027 is grouped by h
Mark EH EJ EK
h
FE1
60 to 120 100 to 200 160 to 320
–180 — — V IC = –1 mA, IE = 0
–120 — — V IC = –10 mA, RBE = ∞
–5——V I
— — –10 µAVCB = –160 V, IE = 0
1
*
60 — 320 VCE = –5 V, IC = –0.15 A,
30 — — VCE = –5 V, IC = –0.5 A,
— — –1.0 V IC = –0.5 A, IB = –50 mA,
— — –0.9 V VCE = –5 V, IC = –0.15 A,
as follows.
FE1
–180 V
–120 V
–5 V
–1.5 A
–3 A
1W
= –1 mA, IC = 0
E
pulse
pulse
Pulse
pulse
2
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