1SS286
Silicon Schottky Barrier Diode for Various Detector, High Speed Switching
ADE-208-302A (Z)
Rev. 1
Sep. 1995
Features
•Very low reverse current.
•Detection efficiency is very good.
•Small glass package (MHD) enables easy mounting and high reliability.
Ordering Information
Type No. |
Cathode band |
Mark |
Package Code |
|
|
|
|
1SS286 |
Green |
7 |
MHD |
|
|
|
|
Outline
1 |
7 |
2 |
|
||
|
Cathode band |
|
|
1. |
Cathode |
|
2. |
Anode |
1SS286
Absolute Maximum Ratings
(Ta = 25°C)
Item |
Symbol |
Value |
Unit |
|
|
|
|
Reverse voltage |
VR |
25 |
V |
Forward current |
IF |
35 |
mA |
|
|
|
|
Power dissipation |
Pd |
150 |
mW |
|
|
|
|
Junction temperature |
Tj |
100 |
°C |
|
|
|
|
Storage temperature |
Tstg |
–55 to +100 |
°C |
|
|
|
|
Electrical Characteristics
(Ta = 25°C)
Item |
Symbol Min |
Typ |
Max |
Unit |
|
Test Condition |
||
Forward voltage |
VF |
— |
— |
0.6 |
V |
I |
F = 10mA |
|
|
|
|
|
|
|
|
|
|
Reverse voltage |
VR |
25 |
— |
— |
V |
I |
R = 10µA |
|
|
|
|
|
|
|
|
|
|
Reverse current |
IR |
— |
— |
10 |
nA |
V |
R= 10V |
|
|
|
|
|
|
|
|
|
|
Capacitance |
C |
— |
— |
1.2 |
pF |
V |
R = 0V, f = 1MHz |
|
|
|
|
|
|
|
|
|
|
Capacitance deviation |
∆ |
C |
— |
— |
0.1 |
pF |
V |
R = 0V, f = 1MHz |
Forward voltage |
∆ |
VF |
— |
— |
10 |
mV |
I |
F = 10mA |
deviation |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
ESD-Capability |
— |
|
10 |
— |
— |
V |
* |
1C = 200pF, Both forward and |
|
|
|
|
|
|
|
|
reverse direction 1 pulse. |
|
|
|
|
|
|
|
||
Notes: 1. Failure criterion; IR ≥ |
20µA |
|
|
|
|
|
||
2. Each group shall unify a multiple of 4 diodes |
|
|
|
Rev.1, Sep. 1995, page 2 of 6