HIT 1SS286 Datasheet

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HIT 1SS286 Datasheet

1SS286

Silicon Schottky Barrier Diode for Various Detector, High Speed Switching

ADE-208-302A (Z)

Rev. 1

Sep. 1995

Features

Very low reverse current.

Detection efficiency is very good.

Small glass package (MHD) enables easy mounting and high reliability.

Ordering Information

Type No.

Cathode band

Mark

Package Code

 

 

 

 

1SS286

Green

7

MHD

 

 

 

 

Outline

1

7

2

 

 

Cathode band

 

 

1.

Cathode

 

2.

Anode

1SS286

Absolute Maximum Ratings

(Ta = 25°C)

Item

Symbol

Value

Unit

 

 

 

 

Reverse voltage

VR

25

V

Forward current

IF

35

mA

 

 

 

 

Power dissipation

Pd

150

mW

 

 

 

 

Junction temperature

Tj

100

°C

 

 

 

 

Storage temperature

Tstg

–55 to +100

°C

 

 

 

 

Electrical Characteristics

(Ta = 25°C)

Item

Symbol Min

Typ

Max

Unit

 

Test Condition

Forward voltage

VF

0.6

V

I

F = 10mA

 

 

 

 

 

 

 

 

Reverse voltage

VR

25

V

I

R = 10µA

 

 

 

 

 

 

 

 

Reverse current

IR

10

nA

V

R= 10V

 

 

 

 

 

 

 

 

Capacitance

C

1.2

pF

V

R = 0V, f = 1MHz

 

 

 

 

 

 

 

 

 

Capacitance deviation

C

0.1

pF

V

R = 0V, f = 1MHz

Forward voltage

VF

10

mV

I

F = 10mA

deviation

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

ESD-Capability

 

10

V

*

1C = 200pF, Both forward and

 

 

 

 

 

 

 

 

reverse direction 1 pulse.

 

 

 

 

 

 

 

Notes: 1. Failure criterion; IR

20µA

 

 

 

 

 

2. Each group shall unify a multiple of 4 diodes

 

 

 

Rev.1, Sep. 1995, page 2 of 6

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