The MB85R1002 is an FRAM (Ferroelectric Random Access Memory) chip consisting of 65,536 words x 16 bits
of non-volatile memory cells created using ferroelectric process and silicon gate CMOS process technologies.
The MB85R1002 is able to retain data without using a back-up battery, as is needed for SRAM.
The memory cells used in the MB85R1002 can be used for at least 10
improvement over the number of read and write operations supported by Flash memory and E
The MB85R1002 uses a pseudo-SRAM interface that is compatible with conventional asynchronous SRAM.
ModeCE1CE2 WE OELBUBI/O1 to I/O8 I/O9 to I/O16 Supply Current
HXXXXX
MB85R1002
Standby Pre-charge
Read
Read
(Pseudo-SRAM,
OE
control*1)
Write
Write
(Pseudo-SRAM,
WE
control*2)
Notes : L = VIL, H = VIH, X can be either VIL or VIH, High-Z = High Impedance
: Latch address and latch data at falling edge, : Latch address and latch data at rising edge
XLXXXX
XXHHXX
XXXXHH
LLDoutDout
H
L
LHH
H
L
LHH
HL
LX
LHDoutHigh-Z
HLHigh-ZDout
LLDoutDout
LHDoutHigh-Z
HLHigh-ZDout
LL DinDin
LHDinHigh-Z
HL High-ZDin
LL DinDin
LHDinHigh-Z
HL High-ZDin
High-ZHigh-Z
Standby
(ISB)
Operation
(I
CC)
*1 : OE
*2 : WE
control of the Pseudo-SRAM means the valid address at the falling edge of OE to read.
control of the Pseudo-SRAM means the valid address and data at the falling edge of WE to write.
5
MB85R1002
■ ABSOLUTE MAXIMUM RATINGS
ParameterSymbol
Unit
MinMax
Rating
Supply Voltage*V
Input Voltage*V
Output Voltage*V
Ambient Operating TemperatureTA−20+85
Storage TemperatureT
CC−0.5+4.0V
IN−0.5VCC+ 0.5V
OUT−0.5VCC+ 0.5V
o
stg−40+125
o
C
C
* : All voltages are referenced to GND.
WARNING: Semiconductor devices can be permanently damaged by application of stress (voltage, current,
temperature, etc.) in excess of absolute maximum ratings. Do not exceed these ratings.
■ RECOMMENDED OPERATING CONDITIONS
ParameterSymbol
Supply Voltage*V
Input Voltage (high)*V
Input Voltage (low)*V
Ambient Operating TemperatureT
MinTypMax
CC3.03.33.6V
IHVCC× 0.8⎯VCC+ 0.5V
IL−0.5⎯+0.6V
A− 20⎯+85
Val ue
Unit
o
C
* : All voltages are referenced to GND.
WARNING: The recommended operating conditions are required in order to ensure the normal operation of the
semiconductor device. All of the device’s electrical characteristics are warranted when the device is
operated within these ranges.Always use semiconductor devices within their recommended operating
condition ranges. Operation outside these ranges may adversely affect reliability and could result in
device failure.
No warranty is made with respect to uses, operating conditions, or combinations not represented on
the data sheet. Users considering application outside the listed conditions are advised to contact their
FUJITSU representatives beforehand.
6
■ ELECTRICAL CHARACTERISTICS
MB85R1002
1.DC CHARACTERISTICS
(within recommended operating conditions)
ParameterSymbolTest Conditions
Input Leakage Current|I
LI|VIN = 0 V to VCC⎯⎯10µA
Output Leakage Current|ILO|VOUT = 0 V to VCC, CE1 = VIH or OE = VIH⎯⎯10µA
Operating Power Supply
Current
I
CCCE1 = 0.2 V, CE2 = VCC−0.2 V, Iout = 0 mA*
1
CE1 ≥ VCC−0.2 V
2
2
2
Standby CurrentI
CE2 ≤ 0.2 V*
SB
OE ≥ VCC−0.2 V, WE ≥ VCC−0.2 V*
LB ≥ VCC−0.2 V, UB ≥ VCC−0.2 V*
Output Voltage (high)VOHIOH = −0.1 mAVCC× 0.8⎯⎯ V
Output Voltage (low)V
*1 : During the measurement of I
OLIOL = 2.0 mA⎯⎯0.4V
CC , the Address, Data In were taken to only change once per active cycle.
Iout : output current
*2 : All pins other than setting pins should be input at the CMOS level voltages such as H ≥ V
Val ue
Unit
MinTyp Max
⎯1015mA
⎯1050µA
CC− 0.2 V, L ≤ 0.2 V.
7
MB85R1002
2.AC TEST CONDITIONS
Supply Voltage : 3.0 V to 3.6 V
Operating Temperature : −20
Input Voltage Amplitude : 0.3 V to 2.7 V
Input Rising Time : 5 ns
Input Falling Time : 5 ns
Input Evaluation Level : 2.0 V / 0.8 V
Output Evaluation Level : 2.0 V / 0.8 V
Output Impedance : 50 pF
o
C to +85 oC
(1) Read Operation
(within recommended operating conditions)
Val ue
ParameterSymbol
MinMax
Read Cycle timet
CE
1 Active TimetCA1120⎯ns
CE2 Active Timet
OE
Active TimetRP120⎯ns
LB
, UB Active TimetBP120⎯ns
Pre-charge Timet
Address Setup Timet
Address Hold Timet
OE
Setup TimetES0⎯ns
LB
, UB Setup TimetBS5⎯ns
Output Data Hold timet
Output Set Timet
CE
1 Access TimetCE1⎯100ns
CE2 Access Timet
OE
Access TimetOE⎯100ns
Output Floating Timet
RC150⎯ns
CA2120⎯ns
PC20⎯ns
AS0⎯ns
AH50⎯ns
OH0⎯ns
LZ30⎯ns
CE2⎯100ns
OHZ⎯20ns
Unit
8
(2) Write Operation
MB85R1002
(within recommended operating conditions)
ParameterSymbol
Value
MinMax
Write Cycle Timet
CE
1 Active TimetCA1120⎯ns
CE2 Active Timet
LB
, UB Active TimetBP120⎯ns
Pre-Charge Timet
Address Setup Timet
Address Hold Timet
LB
, UB Setup TimetBS5⎯ns
Write Pulse Widtht
Data Setup Timet
Data Hold Timet
Write Setup Timet
WC150⎯ns
CA2120⎯ns
PC20⎯ns
AS0⎯ns
AH50⎯ns
WP120⎯ns
DS0⎯ns
DH50⎯ns
WS0⎯ns
(3) Power ON/OFF Sequence
(within recommended operating conditions)
Parameter
1 LEVEL hold time for Power OFFtpd85⎯⎯ns
CE
Sym-
bol
MinTypMax
Val ue
Unit
Unit
CE
1 LEVEL hold time for Power ONtpu85⎯⎯ns
3.Pin Capacitance
(f = 1 MHz, TA=+25 oC)
ParameterSymbolTest Condition
Input CapacitanceC
Output CapacitanceC
MinTypMax
INVIN= GND⎯⎯10pF
OUTVOUT= GND⎯⎯10pF
Val ue
Unit
9
MB85R1002
■ TIMING DIAGRAMS
1.Read Cycle Timing 1 (CE
CE1
CE2
tBS
LB, UB
tAStAH
A0 to A15
OE
I/O1 to I/O16
Valid
tES
1, CE2 Control)
tCE1,
tCE2
tLZ
tRC
tCA1
tCA2
tBP
H or L
tRP
tOH
Valid
InvalidInvalid
tPC
tOHZ
High-Z
2.Read Cycle Timing 2 (OE
CE1
CE2
t
LB, UB
t
A0 to A15
OE
I/O1 to I/O16
ValidH or L
Control)
BS
AS
t
AH
t
CA1
t
CA2
t
BP
t
RC
t
t
OHZ
PC
High-Z
t
RP
t
OE
t
t
LZ
InvalidInvalid
OH
Valid
10
3.Write Cycle Timing 1(CE1, CE2 Control)
CE1
t
CA1
MB85R1002
t
WC
t
PC
CE2
LB, UB
A0 to A15
WE
Data In
4.Write Cycle Timing 2 (WE
CE1
t
BS
t
t
AS
AH
ValidH or L
t
WS
t
DS
t
DH
ValidH or L
Control)
t
t
CA1
CA2
t
BP
t
WP
High-Z
CE2
LB, UB
A0 to A15
WE
Data In
t
CA2
t
t
BS
t
t
AS
AH
BP
ValidH or L
t
WP
t
DS
t
DH
ValidH or L
t
WC
t
PC
High-Z
11
MB85R1002
■ POWER ON/OFF SEQUENCE
V
CC
CE2
3.0 V
tputpd
V
CC
CE2
3.0 V
VIH (Min)
1.0 V
V
IL
(Max)
GND
CE1
CE2 ≤ 0.2 V
CE1 > VCC × 0.8*CE1 : Don't CareCE1 > VCC × 0.8*
* : CE1 (Max) < VCC+ 0.5 V
Note : You can choose either of CE
1 or CE2, or both for disenable control of the device.
■ NOTES ON USE
Data that is written prior to IR reflow is not guaranteed to be retained after IR reflow.
CE1
VIH (Min)
1.0 V
V
IL
(Max)
GND
■ ORDERING INFOMATION
Part numberPackage
MB85R1002PFTN-GE1
MB85R1002BGT-GE1
12
48-pin plastic TSOP(1)
(FPT-48P-M25)
48-pin plastic FBGA
(BGA-48P-M23)
■ PACKAGE DIMENSIONS
48-pin plastic TSOP(1)Lead pitch0.50 mm
MB85R1002
(FPT-48P-M25)
48-pin plastic TSOP(1)
(FPT-48P-M25)
LEAD No.
148
INDEX
Package width ×
package length
12.00 × 12.40 mm
Lead shapeGullwing
Sealing methodPlastic mold
Mounting height1.20 mm MAX
Weight0.37 g
Code
(Reference)
Note 1)*1 : Resin protrusion. (Each side : +0.15 (.006) Max).
Note 2)*2 : These dimensions do not include resin protrusions.
Note 3) Pin widths and pin thicknesses include plating thickness.
Note 4) Pin widths do not include tie bar cutting burrs.
P-TSOP(1)48-12×12.4-0.50
0.10±0.05
(.004±.002)
(Stand off)
0.50(.020)
1
*
12.00±0.10
(.472±.004)
24
*
C
2003 FUJITSU LIMITED F48043S-c-2-2
14.00±0.20(.551±.008)
2
12.40±0.10(.488±.004)
0.08(.003)
25
"A"
+0.05
–0.03
0.145
+.002
.006
–.001
Please confirm the latest Package dimension by following URL.
http://edevice.fujitsu.com/fj/DATASHEET/ef-ovpklv.html
+0.05
0.22
–0.04
0.10(.004)
+.002
–.002
.009
1.13±0.07
(.044±.003)
Details of "A" part
0.25(.010)
Dimensions in mm (inches).
Note: The values in parenthesesare reference values
(Mounting height)
M
0
˚~8˚
0.60±0.15
(.024±.006)
(Continued)
13
MB85R1002
(Continued)
48-pin plastic FBGALead pitch0.75 mm
(BGA-48P-M23)
48-pin plastic FBGA
(BGA-48P-M23)
8.10±0.20(.319±.008)
6.10±0.20
.008)
(.240
±
Package width ×
package length
8.10 mm × 6.10 mm
Lead shapeBall
Sealing methodPlastic mold
Mounting height1.10 mm Max
Weight0.08 g
+.006
+0.15
.043 –.004
–0.10
0.95
(Mounting height)
0.25±0.10(.010±.004)
(Stand off)
A
3.75
(.148)
5.25(.207)
0.75(.030)TYP
B
6
5
4
3
2
1
(INDEX AREA)
0.10(.004)
C
2007 FUJITSU LIMITED B48023S-c-1-1
S
Please confirm the latest Package dimension by following URL.
http://edevice.fujitsu.com/fj/DATASHEET/ef-ovpklv.html
14
HGFEDCBA
0.35±0.05
48-
ø
(48-ø.014±.002)
Dimensions in mm (inches).
Note: The values in parentheses are reference values.
0.08(.003)S A
ø
M
B
MB85R1002
FUJITSU LIMITED
All Rights Reserved.
The contents of this document are subject to change without notice.
Customers are advised to consult with FUJITSU sales
representatives before ordering.
The information, such as descriptions of function and application
circuit examples, in this document are presented solely for the
purpose of reference to show examples of operations and uses of
Fujitsu semiconductor device; Fujitsu does not warrant proper
operation of the device with respect to use based on such
information. When you develop equipment incorporating the
device based on such information, you must assume any
responsibility arising out of such use of the information. Fujitsu
assumes no liability for any damages whatsoever arising out of
the use of the information.
Any information in this document, including descriptions of
function and schematic diagrams, shall not be construed as license
of the use or exercise of any intellectual property right, such as
patent right or copyright, or any other right of Fujitsu or any third
party or does Fujitsu warrant non-infringement of any third-party’s
intellectual property right or other right by using such information.
Fujitsu assumes no liability for any infringement of the intellectual
property rights or other rights of third parties which would result
from the use of information contained herein.
The products described in this document are designed, developed
and manufactured as contemplated for general use, including
without limitation, ordinary industrial use, general office use,
personal use, and household use, but are not designed, developed
and manufactured as contemplated (1) for use accompanying fatal
risks or dangers that, unless extremely high safety is secured, could
have a serious effect to the public, and could lead directly to death,
personal injury, severe physical damage or other loss (i.e., nuclear
reaction control in nuclear facility, aircraft flight control, air traffic
control, mass transport control, medical life support system, missile
launch control in weapon system), or (2) for use requiring
extremely high reliability (i.e., submersible repeater and artificial
satellite).
Please note that Fujitsu will not be liable against you and/or any
third party for any claims or damages arising in connection with
above-mentioned uses of the products.
Any semiconductor devices have an inherent chance of failure. You
must protect against injury, damage or loss from such failures by
incorporating safety design measures into your facility and
equipment such as redundancy, fire protection, and prevention of
over-current levels and other abnormal operating conditions.
If any products described in this document represent goods or
technologies subject to certain restrictions on export under the
Foreign Exchange and Foreign Trade Law of Japan, the prior
authorization by Japanese government will be required for export
of those products from Japan.
The company names and brand names herein are the trademarks or
registered trademarks of their respective owners.
EditedBusiness Promotion Dept.
F0708
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