ASSP For Power Management Applications
(General Purpose DC/DC Converter)
2-ch DC/DC Converter IC
with Overcurrent Protection
MB39A104
DESCRIPTION
■
The MB39A104 is a 2-channel DC/DC converter IC using pulse width modulation (PWM), incorporating an
overcurrent protection circuit (requiring no current sense resistor). This IC is ideal for down conversion.
Operating at high frequency reduces the value of coil.
This is ideal for built-in power supply such as LCD monitors and ADSL.
This product is covered by US Patent Number 6,147,477.
FEATURES
■
• Built-in timer-latch overcurrent protection circuit (requiring no current sense resistor)
• Power supply voltage range : 7 V to 19 V
• Reference voltage : 5.0 V ± 1 %
• Error amplifier threshold voltage : 1.24 V ± 1 %
• Built-in soft-start circuit independent of loads
• Built-in totem-pole type output for Pch MOS FET
PACKAGE
■
24-pin plastic SSOP
(FPT-24P-M03)
MB39A104
PIN ASSIGNMENTS
■
(TOP VIEW)
VCCO :
VH :
OUT1 :
VS1 :
ILIM1 :
DTC1 :
VCC :
CSCP :
FB1 :
−INE1 :
CS1 :
RT :
10
11
12
1
2
3
4
5
6
7
8
9
24
23
22
21
20
19
18
17
16
15
14
13
: CTL
: GNDO
: OUT2
: VS2
: ILIM2
: DTC2
: GND
: VREF
: FB2
: −INE2
: CS2
: CT
(FPT-24P-M03)
2
MB39A104
PIN DESCRIPTION
■
Pin No.SymbolI/ODescriptions
1VCCOOutput circuit power supply terminal (Connect to same potential as VCC pin.)
2VHOPower supply terminal for FET drive circuit (VH = V
3OUT1OExternal Pch MOS FET gate drive terminal
4VS1IOvercurrent protection circuit input terminal
Overcurrent protection circuit detection resistor connection terminal. Set
overcurrent detection reference voltage depending on external resistor and
internal current resource (110 µA at RT = 24 kΩ)
PWM comparator block (PWM) input terminal. Compares the lowest voltage
among FB1 and DTC terminals with triangular wave and controls output.
Power supply terminal for reference power supply and control circuit
(Connect to same potential as the VCCO terminal)
CC− 5 V)
17VREFOReference voltage output terminal
18GND
19DTC2I
20ILIM2I
21VS2IOvercurrent protection circuit input terminal
22OUT2OExternal Pch MOS FET gate drive terminal
23GNDOOutput circuit ground terminal (Connect to same potential as GND terminal.)
24CTLI
Output circuit ground terminal (Connect to same potential as GNDO
terminal.)
PWM comparator block (PWM) input terminal. Compares the lowest voltage
among FB2 and DTC terminals with triangular wave and controls output.
Overcurrent protection circit detection resistor connection terminal. Set
overcurrent detection reference voltage depending on external resistor and
internal current resource (110 µA at RT = 24 kΩ)
Power supply control terminal. Setting the CTL terminal at “L” level places IC
in the standby mode.
3
MB39A104
■ BLOCK DIA GRAM
10
−INE1
11
CS1
FB1
10 µA
9
VREF
1.24 V
Error
Amp1
−
+
+
L priority
L priority
PWM
Comp.1
+
+
−
CH1
Drive1
Pch
IO= 200 mA
at VCCO = 12 V
1
3
VCCO
OUT1
DTC1
−INE2
CS2
FB2
DTC2
CSCP
6
15
10 µA
14
16
19
H: at SCP
8
VREF
1.24 V
SCP
Logic
UVLO
OSC
12 131817
RT CTGNDVREF
−
+
+
L priority
H priority
SCP
Comp.
H:UVLO
release
Error
Amp2
+
+
−
(3.1 V)
L priority
2.5 V
1.5 V
Accuracy
±1%
PWM
Comp.2
+
+
−
5.0 V
bias
Current
Protection
Logic
CH2
Pch
I
O= 200 mA
at VCCO = 12 V
Current
Protection
Logic
H: at OCP
VH
Voltage
Error Amp Power Supply
Error Amp Reference
1.24 V
VREF
VR1
Drive2
V
Bias
Power
ON/OFF
−
+
−
+
CC− 5 V
CTL
4
5
22
21
20
2
23
7
24
VS1
ILIM1
OUT2
VS2
ILIM2
VH
GNDO
VCC
CTL
4
ABSOLUTE MAXIMUM RATINGS
■
MB39A104
ParameterSymbolCondition
Unit
MinMax
Rating
Power supply voltageV
Output currentI
Output peak currentI
Power dissipationP
Storage temperatureT
* : The packages are mounted on the epoxy board (10 cm × 10 cm).
WARNING: Semiconductor devices can be permanently damaged by application of stress (voltage, current,
temperature, etc.) in excess of absolute maximum ratings. Do not exceed these ratings.
RECOMMENDED OPERATING CONDITIONS
■
ParameterSymbolCondition
Power supply voltageV
Reference voltage output currentI
VH output currentI
Input voltage
V
Control input voltageV
Output currentI
Output Peak currentI
* : See“ ■ SETTING THE TRIANGULAR OSCILLATION FREQUENCY”.
WARNING: The recommended operating conditions are required in order to ensure the normal operation of the
semiconductor device. All of the device’s electrical characteristics are warranted when the device is
operated within these ranges.
Always use semiconductor devices within their recommended operating condition ranges. Operation
outside these ranges may adversely affect reliability and could result in device failure.
No warranty is made with respect to uses, operating conditions, or combinations not represented on
the data sheet. Users considering application outside the listed conditions are advised to contact their
FUJITSU representatives beforehand.
5
MB39A104
ELECTRICAL CHARACTERISTICS
■
Parameter
Output voltageVREF17Ta = +25 °C4.955.005.05V
Output voltage
The reference voltage circuit generates a temperature-compensated reference voltage (5.0 V Typ) from the
voltage supplied from the power supply terminal (pin 7). The voltage is used as the reference voltage for the
IC’s internal circuitry.
The reference voltage can supply a load current of up to 1 mA to an external device through the VREF terminal
(pin 17).
(2) Triangular-wave oscillator block (OSC)
The triangular wave oscillator incorporates a timing capacitor and a timing resistor connected respectively to
the CT terminal (pin 13) and RT terminal (pin 12) to generate triangular oscillation wavef orm amplitude of 1.5 V
to 2.5 V.
The triangular waveforms are input to the PWM comparator in the IC.
The error amplifier detects the DC/DC converter output voltage and outputs PWM control signals. In addition,
an arbitrary loop gain can be set by connecting a feedback resistor and capacitor from the output terminal to
inverted input terminal of the error amplifier, enabling stable phase compensation to the system.
Also, it is possib le to prevent rush current at power supply start-up by connecting a soft-start capacitor with the
CS1 terminal (pin 11) and CS2 terminal (pin 14) which are the non-inverted input ter minal for Error Amp. The
use of Error Amp for soft-start detection makes it possible for a system to oper ate on a fixed soft-start time that
is independent of the output load on the DC/DC converter.
(4) PWM comparator block (PWM Comp.)
The PWM comparator is a voltage-to-pulse width modulator that controls the output duty depending on the input/
output voltage.
The comparator keeps output transistor on while the error amplifier output voltage remain higher than the
triangular wave voltage.
(5) Output block
The output block is in the totem pole configuration, capable of driving an external P-channel MOS FET.
(6) Bias voltage block (VH)
This bias voltage circuit outputs V
circuit outputs the potential equal to V
CC− 5 V(Typ) as minimum potential of the output circuit. In standby mode , this
CC.
11
MB39A104
2.Control Function
When CTL terminal (pin 24) is “L” level, IC becomes the standby mode . The power supply current is 10 µA (Max)
at the standby mode.
The timer-latch overcurrent protection circuit is actuated upon completion of the soft-start period. When an
overcurrent flows, the circuit detects the increase in the voltage between the FET’s drain and source using the
external FET ON resistor, actuates the timer circuit, and starts charging the capacitor C
CSCP terminal (pin 8). If the overcurrent remains flowing beyond the predetermined period of time, latch is set
and OUT terminlas (pin 3,22) of each channel are fixed at “H” lev el. And the circuit sets the latch to turn off the
external FET. The detection current value can be set by resistor R
the ILIM1 terminal (pin 5) and resistor R
LIM2 connected between the drain and the ILIM2 terminal (pin 20).
LIM1 connected between the FET’s drain and
SCP con-nected to the
Changing connection enables to detect overcurrent at current sense resistor.
To reset the actuated protection circuit, either the power supply turn off and on again or set the CTL terminal
(pin 6) to the “L” level to lo w er the VREF terminal (pin 17) voltage to 2.4 V (Min) or less . (See “1. Setting TimerLatch Overcurrent Protection Detection Current” in “■ABOUT TIMER-LATCH PROTECTION CIRCUIT”.)
The short-circuit detection comparator (SCP Comp.) detects the output voltage level of Error Amp, and if the
error amp output voltage of any channel falls below the shor t-circuit detection voltage (3.1 V Typ), the timer
circuits are actuated to start charging the external capacitor C
SCP connected to the CSCP terminal (pin 8).
When the capacitor voltage reaches about 0.73 V, the circuit is turned off the output transistor and sets the dead
time to 100 %.
To reset the actuated protection circuit, either the power supply turn off and on again or set the CTL terminal
(pin 24) to the “L” level to lower the VREF terminal (pin 17) voltage to 2.4 V (Min) or less. (See “2. Setting Time
Constant for Timer-Latch Short-Circuit Protection Circuit” in “■ABOUT TIMER-LATCH PROTECTION CIRCUIT”.)
(3) Under voltage lockout protection circuit (UVLO)
The transient state or a momentary decrease in supply voltage, which occurs when the power supply is turned
on, may cause the IC to malfunction, resulting in breakdown or degradation of the system. To prevent such
malfunctions, under voltage loc kout protection circuit detects a decrease in internal reference voltage with respect
to the power supply voltage, tur ns off the output transistor, and sets the dead time to 100% while holding the
CSCP terminal (pin 8) at the “L” level.
The circuit restores the output transistor to normal when the supply voltage reaches the threshold voltage of the
undervoltage lockout protection circuit.
(4) Protection circuit operating function table
This table refers to output condition when protection circuit is operating.
The triangular oscillation frequency is determined by the timing capacitor (CT) connected to the CT terminal (pin
13), and the timing resistor (R
T) connected to the RT terminal (pin 12).
Moreover, it shifts more greatly than the caluculated v alues according to the constant of timing resistor (R
the triangular wave oscillation frequency e xceeds 1 MHz. Therefore, set it referring to “T riangular W ave Oscillation
Frequency vs . Timing Resistor” and “T riangular Wav e Oscillation Frequency vs. Timing Capacitor” in “■ TYPICAL
CHARACTERISTICS”.
T) when
Triangular oscillation frequency : f
fOSC (kHz) :=
1200000
C
T (pF) •RT (kΩ)
OSC
13
MB39A104
SETTING THE SOFT-START AND DISCHARGE TIMES
■
To prevent r ush currents when the IC is tur ned on, you can set a soft-star t by connecting soft-star t capacitors
(C
S1 and CS2) to the CS1 terminal (pin 11) for channel 1 and the CS2 terminal (pin 14) for channel 2, respectively.
When CTL terminal (pin 24) goes to “H” level and IC starts (V
start capacitors (C
S1 and CS2) connected to CS1 and CS2 terminals are charged at 10 µA. The error amplifier
output (FB1 (pin 9) , FB2 (pin 16) ) is determined by comparison between the lower one of the potentials at two
non-inverted input terminals (1.24 V, CS1 terminal voltages) and the inverted input terminal voltage (−INE1 (pin
10) voltage, −INE2 (pin 15) voltage).
The FB1 (FB2) terminal voltage is decided for the soft-start period by the comparison between 1.24 V in an
internal reference voltage and the voltages of the CS1 (CS2) terminal. The DC/DC conver ter output voltage
rises in proportion to the CS1 (CS2) ter minal voltage as the soft-star t capacitor connected to the CS1 (CS2)
terminal is charged.
The soft-start time is obtained from the following formula:
Soft-start time: ts (time to output 100%)
ts (s) := 0.124 × C
S (µF)
CC≥ UVLO threshold voltage), the external soft-
:= 5 V
:= 1.24 V
:= 0 V
CS1 (CS2) terminal voltage
Error Amp block −INE1 (−INE2) voltage
t
Soft-start time (ts)
14
• Soft-Start Circuit
MB39A104
O
V
R1
R2
CH ON/OFF signal
L : ON, H : OFF
−INE1
(−INE2)
CS1
(CS2)
C
S1
(CS2)
FB1
(FB2)
10
15
11
14
16
VREF
10 µA
L priority
Error Amp
−
+
+
1.24 V
9
UVLO
15
MB39A104
TREATMENT WITHOUT USING CS TERMINAL
■
When not using the soft-start function, open the CS1 terminal (pin 11) and the CS2 terminal (pin 14) .
•
Without Setting Soft-Start Time
“OPEN”
11
CS1
CS2
“OPEN”
14
16
MB39A104
ABOUT TIMER-LATCH PROTECTION CIRCUIT
■
1.Setting Timer-Latch Overcurrent Protection Detection Current
The overcurrent protection circuit is actuated upon completion of the soft-start period. When an overcurrent
flows, the circuit detects the increase in the voltage betw een the FET’ s dr ain and source using the e xternal FET
ON resistor (R
terminal (pin 8). If the overcurrent remains flowing bey ond the predetermined period of time, the circuit sets the
latch to fix OUT terminals (pin 3, 22) at “H” level and turn off the external FET. The detection current value can
be set by the resistors (R
between the drain and the ILIM2 terminal (pin 20), respectively.
ON), actuates the timer circuit, and starts charging the capacitor CSCP connected to the CSCP
LIM1 and RLIM2) connected between the FET’s drain and the ILIM1 terminal (pin 5) and
The internal current (I
LIM) can be set by the timing resistor (RT) connected to the RT terminal (pin 12).
Time until activating timer circuit and setting latch is equal to short-circuit detection time in "2. Setting Time
Constant for Timer-Latch Short-Circuit Protection Circuit".
Internal current value: I
I
LIM (µA) :=
LIM
2700
R
T (kΩ)
Detection current value: IOCP
IOCP (A) :=
LIM(A) × RLIM(Ω)
R
ON (Ω)
−−−−
(VIN(V) − VO(V)) × VO(V)
2 × V
IN(V) × fOSC(Hz) × L(H)
I
RLIM : Overcurrent detection resistor
R
ON : External FET ON resistor
V
IN : Input voltage
V
O : DC/DC converter output voltage
f
OSC : Oscillation frequency
L: Coil inductance
To reset the actuated protection circuit, either the power supply turn off and on again or set the CTL terminal
(pin 24) to the "L" level to lower the VREF terminal (pin 17) voltage to 2.4 V (Min) or less.
• Overcurrent detection circuit
IN
V
Q1L
CSCP
8
(1 µA)
S
Latch
(VS2)
21
VS1
4
(ILIM2)
Current
Protection
Logic
VREF
R
UVLO
−
+
Each
Channel
Drive
20
ILIM1
5
LIM)
(R
VO
17
MB39A104
Overcurrent Protection Circuit: Range of Operation
When an overcurrent flow occurs , if the increased voltage between the drain and source of the FET is detected
by means of the external FET (Q1) resistor, operational stability is lost when the external FET (Q1) ON interv al
determined by the oscillation frequency, input voltage, and output voltage falls below 450 ns.
Therefore, the circuit should be used within a range that ensures that the ON interval does not f all belo w 450ns,
according to the following formula.
V
ON interval 450 (ns) ≥
V
If the ON interval of the external FET (Q1) is below 450ns, we recommend the use of an overcurrent detection
resistor RS to detect overcurrent, as shown below.
This example shows the range of operation of the overcurrent detection function with a setting of Vo = 3.3V.
•
Method to detect by current when external FET(Q1) is turned on
IN
V
(VS2)
21
VS1
4
O (V)
IN (V) × fOSC (Hz)
(Rs)
ErrAmp
Q1
Overcurrent Detection Function Operating Range
1600
1400
VO= set to 3.3 V
1200
1000
(ILIM2)
−+20
•
Method to detect by mean current
ILIM1
5
VIN
(VS2)
21
VS1
4
(ILIM2)
−
20
ILIM1
+
5
Connect to RS
Q1
when
using RS
ErrAmp
S
R
800
fOSC (kHz)
400
200
0
68101214
Operation Range
161820
VCC (V)
Overcurrent Detection Function Operating Range
1600
1400
1200
1000
800
fOSC (kHz)
600
400
200
0
68101214
Operation Range
VO= set to 3.3 V
161820
VCC (V)
18
MB39A104
2.Setting Time Constant for Timer-Latch Short-Circuit Protection Circuit
Each channel uses the short-circuit detection comparator (SCP Comp.) to always compare the error amplifier′s
output level to the reference voltage (3.1 V Typ).
While DC/DC converter load conditions are stable on all channels, the short-circuit detection comparator output
remains at “L” level, and the CSCP terminal (pin 8) is held at “L” level.
If the load condition on a channel changes rapidly due to a short-circuit of the load, causing the output voltage
to drop, the output of the short-circuit detection comparator goes to “H” level. This causes the external shortcircuit protection capacitor C
Short-circuit detection time (t
t
SCP (s) := 0.73 × CSCP (µF)
When the capacitor C
FET is turned off (dead time is set to 100%). At this time, the latch input is closed and the CSCP terminal is
held at “L” level. If a short-circuit is detected on either of the two channels, both channels are shut off.
When the power supply is turned on back or VREF terminal (pin 17) voltage is less than 2.4 V (Min) by setting
CTL terminal (pin 24) to “L” level, the latch is released.
•
Timer-latch short-circuit protection circuit
SCP connected to the CSCP terminal to be charged at 1 µA.
SCP)
SCP is charged to the threshold voltage (VTH := 0.73 V), the latch is set and the external
R1
R2
(FB2)
V
O
FB1
(−INE2)
−INE1
16
15
10
9
Error
Amp
−
+
(1.24 V)
SCP
Comp.
(1 µA)
+
+
−
(3.1 V)
To each channel
Drive
CSCP
8
S
R
Latch
VREF
UVLO
19
MB39A104
TREATMENT WITHOUT USING CSCP TERMINAL
■
When not using the timer-latch short-circuit protection circuit, connect the CSCP ter minal (pin 8) to GND with
the shortest distance.
• Treatment without using CSCP
18
GND
8
CSCP
RESETTING THE LATCH OF EACH PROTECTION CIRCUIT
■
When the overcurrent, or short-circuit protection circuit detects each abnormality , it sets the latch to fix the output
at the "L" level.
To reset the actuated protection circuit, either the power supply turn off and on again or set the CTL terminal
(pin 24) to the "L" level to lower the VREF terminal (pin 17) voltage to 2.4 V (Min) or less.
20
MB39A104
O
I/O EQUIVALENT CIRCUIT
■
〈〈Reference voltage block〉〉〈〈Control block〉〉〈〈Soft-start block〉〉
VCC
GND
18
7
24
1.24 V
+
−
VREF
77.8
kΩ
24.8
kΩ
17
CTL
GND
72
kΩ
104
kΩ
VREF
(5.0 V)
GND
VCC
CSX
〈〈Short-circuit detection block〉〉
VREF
(5.0 V)
2 kΩ
GND
8
CSCP
〈〈Error amplifier block (CH1, CH2) 〉〉
VCC
VREF
(5.0 V)
−INEXCSX
1.24 V
GND
〈〈PWM comparator
block (CH1, CH2) 〉〉
VCC
〈〈Triangular wave oscillator
block (RT) 〉〉
(3.1 V)
1.35 V
GND
+
−
FBX
〈〈Bias voltage block〉〉
VCC
〈〈Triangular wave oscillator
(3.1 V)
CT
GND
(CT) block〉〉
13
12
VCC
RT
〈〈Overcurrent protection circuit block〉〉
VCC
ILIMX
GND
〈〈Output block (CH1, CH2) 〉〉
VCCO
VCCO
1
VCCO
VSX
GNDO
FBXCT
DTCX
GND
GND
2
GNDO
VH
GNDO
VH
23
X : Each channel No.
21
MB39A104
APPLICATION EXAMPLE
■
Step-
down
O1
V
(5.0 V)
A
Q1L1
VCCO
1
CH1
L priority
15 µF
OUT1
Drive1
PWM
Comp.1
+
+
+
Pch
D1
+
3
−
C4
82 µF
C310µF
C210µF
VS1
IO= 200 mA
at VCCO = 12 V
R4
5
4
−
+
Logic
Current
Protection
Step-
down
2.7 kΩ
ILIM1
O2
V
(3.3 V)
B
C11
0.1 µF
CH2
L priority
Q2L2
PWM
D2
15 µF
++
OUT2
22
Drive2
Pch
Comp.2
+
+
−
C8
82 µF
C710µF
C610µF
VS2
O= 200 mA
at VCCO = 12 V
I
R5
20
21
−
+
Current
Protection
2.7 kΩ
ILIM2
Logic
VH
CC− 5 V
V
H:
at OCP
2
VH
GNDO
Bias
Voltage
23
Error Amp Power Supply
2.5 V
VCC
7
1.5 V
C10
0.1 µF
CTL
Error Amp Reference
1.24 V
bias
TH= 1.4 V
H : ON (Power ON)
L : OFF (Standby mode)
V
24
CTL
Power
ON/OFF
VR1
VREF
± 1%
accuracy
1817
5.0 V
GNDVREF
C20
0.1 µF
10
−INE1
R10R11
Error
Amp1
+
+
−
VREF
56 kΩ
10 µA
CS1
R9
1.24 V
11
R8
220
68 kΩ
0.1
C16
A
150 kΩ
CH1 ON/OFF signal
(Hiz : ON, L : OFF)
L priority
9
kΩ
C12
µF
FB1
1000 pF
6
DTC1
Error
Amp2
+
−
VREF
10 µA
15
14
CS2
−INE2
R14
68 kΩ
13 kΩ
R15R16
B
100 kΩ
CH2 ON/OFF signal
+
R13
220
0.1
C17
(Hiz : ON, L : OFF)
L priority
1.24 V
16
FB2
kΩ
C14
1000 pF
µF
VIN
(7 V to 19 V)
19
H priority
H:
DTC2
SCP
Comp.
at SCP
3.1 V
−
+
+
C1
SCP
Logic
H:
UVLO release
OSC
UVLO
8
12 13
RTCT
100 pF
R1
24 kΩ
CSCP
A)
C21
m
1000 pF
Charging
current (1
22
MB39A104
PARTS LIST
■
COMPONENTITEMSPECIFICATIONVENDORPARTS No.
Q1, Q2Pch FETVDS = −30 V, ID = −6 ATOSHIBATPC8102
D1, D2DiodeVF = 0.42 V (Max) , at IF = 3 AROHMRB0530L-30
The P-ch MOSFET for s witching use should be rated f or at least 20% more than the maxim um input v oltage. To
minimize continuity loss, use a FET with low R
high frequency operation, on/off-cycle switching loss will be higher so that po wer dissipation must be considered.
In this application, the Toshiba TPC8102 is used. Continuity loss, on/off s witching loss , and total loss are determined by the follo wing formulas. The selection must ensure that peak drain current does not e xceed rated values,
and also must be in accordance with overcurrent detection levels.
DS(ON) between the drain and source. For high input voltage and
Continuity loss : P
C
PC= ID 2 × RDS (ON) × Duty
On-cycle switching loss : PS (ON)
P
S (ON) =
VD (Max) × ID× tr × fOSC
6
Off-cycle switching loss : PS (OFF)
P
S (OFF) =
VD (Max) × ID (Max) × tf × fOSC
6
Total loss : PT
PT= PC+ PS (ON) + PS (OFF)
Example: Using the Toshiba TPC8102
CH1
Input voltage V
IN (Max) = 19 V, output v oltage VO= 5 V, drain current ID= 3 A, Oscillation frequency fOSC = 500 kHz,
L = 15 µH, drain-source on resistance R
Drain current (Max) : ID (Max)
I
D (Max) = IO+
= 3 +
VIN− VO
2L
19 − 5
2 × 15 × 10
ton
−6
×
500 × 10
DS (ON) := 50 mΩ, tr = tf := 100 ns.
1
× 0.263
3
:= 3.25 (A)
Drain current (Min) : ID (Min)
ID (Min) = IO−
= 3 −
:= 2.75 (A)
24
VIN− VO
2L
19 − 5
2 × 15 × 10
ton
×
−6
1
500 × 10
× 0.263
3
PC = ID 2 × RDS (ON) × Duty
2
= 3
× 0.05 × 0.263
:= 0.
118 W
MB39A104
PS (ON) =
PS (OFF) =
VD (Max) × ID× tr × fOSC
6
19 × 3 × 100 × 10
=
:= 0.475
W
−9
× 500 × 10
6
VD (Max) × ID (Max) × tf × fOSC
6
19 × 3.25 × 100 × 10−9 × 500 × 10
=
:= 0.515
W
6
3
3
PT = PC+ PS (ON) + PS (OFF)
:= 0.118 + 0.475 + 0.515
:= 1.
108 W
The above pow e r dissipation figures for the TPC8102 are satisfied with ample margin at 2.4 W (Ta = +25 °C) .
CH2
Input voltage V
f
OSC= 500 kHz, L = 15 µH, drain-source on resistance RDS (ON) := 50 mΩ, tr = tf := 100 ns.
IN (Max) = 19 V output voltage VO= 3.3 V, drain current ID= 3 A, Oscillation frequency
Drain current (Max) : I
ID (Max) = IO+
= 3 +
VIN− VO
2 × 15 × 10
D (Max)
2L
19 − 3.3
:= 3.18 (A)
Drain current (Min) : ID (Min)
ID (Min) = IO−
= 3 −
VIN− VO
2L
19 − 3.3
2 × 15 × 10
:= 2.82 (A)
ton
ton
×
−6
×
−6
1
500 × 10
1
500 × 10
× 0.174
3
× 0.174
3
25
MB39A104
P
C = ID
PS (ON) =
PS (OFF) =
2
× RDS (ON) × Duty
2
= 3
:= 0.
×××× 0.05 × 0.174
078 W
VD (Max) × ID× tr × fOSC
19 × 3 × 100 × 10
=
:= 0.475
D (Max) × ID (Max) × tf × fOSC
V
19 × 3.18 × 100 × 10
=
:= 0.504
W
W
6
−9
× 500 × 10
3
6
6
−9
× 500 × 10
3
6
PT = PC+ PS (ON) + PS (OFF)
:= 0.078 + 0.475 + 0.504
:= 1.
057 W
The above pow e r dissipation figures for the TPC8102 are satisfied with ample margin at 2.4 W (Ta = +25 °C) .
• Inductors
In selecting inductors, it is of course essential not to apply more current than the rated capacity of the inductor ,
but also to note that the lower limit for ripple current is a cr itical point that if reached will cause discontinuous
operation and a considerable drop in efficiency. This can be prevented by choosing a higher inductance value,
which will enable continuous operation under light loads. Note that if the inductance value is too high, however,
direct current resistance (DCR) is increased and this will also reduce efficiency. The inductance must be set at
the point where efficiency is greatest.
Note also that the DC superimposition characteristics become worse as the load current value approaches the
rated current value of the inductor , so that the inductance v alue is reduced and ripple current increases, causing
loss of efficiency. The selection of rated current value and inductance value will var y depending on where the
point of peak efficiency lies with respect to load current.
Inductance values are determined by the following formulas.
The L value fo r all load current conditions is set so that the peak to peak value of the ripple current is 1/2 the
load current or less.
Inductance value : L
L ≥
2 (VIN− VO)
I
O
ton
26
Example:
CH1
L ≥
2 × (19 − 5)
≥
≥ 4.91 µH
CH2
L ≥
2 × (19 − 3.3)
≥
≥ 3.64 µH
IN− VO)
2 (V
I
O
IO500 × 10
2 (VIN− VO)
I
O
ton
×
ton
IO500 × 10
×
MB39A104
1
× 0.263
3
1
× 0.174
3
Inductance values derived from the above formulas are values that provide sufficient margin for continuous
operation at maximum load current, but at which continuous oper ation is not possible at light loads. It is theref ore
necessary to determine the load level at which continuous operation becomes possible. In this application, the
Sumida CDRH104R-150 is used. At 15 µH, the load current value under continuous operating conditions is
determined by the following formula.
Load current value under continuous operating conditions : I
IO ≥
VO
2L
toff
O
Example: Using the CDRH104R-150
15 µH (allowable tolerance ±30%) , rated current = 3.6 A
CH1
O ≥
≥
VO
toff
2L
5
2 × 15 × 10
×
−6
1
500 × 10
× (1 − 0.263)
3
I
≥ 245.7 mA
CH2
IO ≥
VO
2L
≥
2 × 15 × 10
toff
3.3
−6
×
500 × 10
1
× (1 − 0.174)
3
≥ 181.7 mA
27
MB39A104
To deter mine whether the current through the inductor is within rated values, it is necessary to determine the
peak value of the ripple current as well as the peak-to-peak values of the ripple current that affect the output
ripple voltage. The peak value and peak-to-peak value of the ripple current can be determined by the following
formulas.
Peak value : I
L ≥ IO+
I
L
VIN− VO
2L
ton
Peak-to-peak value : ∆IL
∆I
L =
VIN− VO
L
ton
Example: Using the CDRH104R-150
15 µH (allowable tolerance ±30%) , rated current = 3.6 A
Peak value:
CH1
I
L ≥ IO+
≥ 3 +
VIN− VO
2L
19 − 5
2 × 15 × 10
ton
−6
×
500 × 10
1
≥ 3.25 A
CH2
IL ≥ IO+
≥ 3 +
VIN− VO
2L
19 − 3.3
2 × 15 × 10
−6
ton
×
500 × 10
1
× 0.263
3
× 0.174
3
≥ 3.18 A
Peak-to-peak value:
CH1
∆IL =
=
= 0.491 A
CH2
∆IL =
=
= 0.364 A
28
VIN− VO
L
19 − 5
15 × 10
VIN− VO
L
19 − 3.3
15 × 10
−6
−6
ton
×
500 × 10
ton
×
500 × 10
1
1
× 0.263
3
× 0.174
3
MB39A104
• Flyback diode
The flyback diode is generally used as a Shottky barrier diode (SBD) when the reverse voltage to the diode is
less than 40V. The SBD has the characteristics of higher speed in ter ms of faster reverse recover y time, and
lower forw ard v oltage , and is ideal f or achieving high efficiency . As long as the DC re v erse voltage is sufficiently
higher than the input voltage, the a v erage current flo wing through the diode is within the a v erage output current
level, and peak current is within peak surge current limits, there is no problem. In this application the Rohm
RB053L-30 is used. The diode average current and diode peak current can be calculated by the following
for mul as.
Diode mean current : I
Di ≥ IO× (1 −
I
VO
VIN
Di
)
Diode peak current : IDip
IDip ≥ (IO+
VO
2L
toff)
Example: Using the Rohm RB053L-30
VR (DC reverse voltage) = 30 V, average output voltage = 3.0 A, peak surge current = 70 A,
VF (forward voltage) = 0.42 V, IF = 3.0 A
CH1
I
Di ≥ IO× (1 −
VO
VIN
)
≥ 3 × (1 − 0.263)
≥ 2.21 A
CH2
IDi ≥ IO× (1 −
VO
VIN
)
≥ 3 × (1 − 0.174)
≥ 2.48 A
CH1
IDip ≥ (IO+
≥ 3.24 A
CH2
IDip ≥ (IO+
≥ 3.18 A
VO
2L
VO
2L
toff)
toff)
29
MB39A104
• Smoothing Capacitor
The smoothing capacitor is an indispensable element for reducing ripple v oltage in output. In selecting a smoothing capacitor it is essential to consider equivalent series resistance (ESR) and allowable ripple current. Higher
ESR means higher ripple voltage, so that to reduce ripple voltage it is necessary to select a capacitor with low
ESR. However, the use of a capacitor with low ESR can have substantial effects on loop phase characteristics,
and therefore requires attention to system stability. Care should also be taken to use a capacity with sufficient
margin for allow able ripple current. This application uses the (OS-CON
capacitance value, and ripple current can be calculated from the following formulas.
Equivalent Series Resistance : ESR
ESR ≤
O
∆V
∆IL2πfCL
−
1
TM
) 6SVP82M made by Sanyo . The ESR,
Capacitance value : C
CL
≥
2πf (∆VO− ∆IL × ESR)
∆IL
L
Ripple current : ICLrms
(V
Lrms ≥
IC
IN− VO) ton
2√3
L
Example: Using the 6SVP82M
Rated voltage = 6.3 V, ESR = 50 mΩ, maximum allowable ripple current = 1570 mArms
Equivalent series resistance
CH1
ESR ≤
≤
∆VO
∆IL2πfCL
0.050
0.4912π × 500 × 10
−
−
1
1
3
× 82 × 10
−6
≤ 98.0 mΩ
30
CH2
O
∆V
ESR ≤
≤
−
∆IL2πfCL
0.033
0.3642π × 500 × 10
≤ 86.8 mΩ
Capacitance value
CH1
CL ≥
2πf (∆VO−∆IL× ESR)
≥
2π× 500 × 10
1
−
1
∆IL
0.491
3
× (0.050 − 0.491 × 0.05)
3
× 82 × 10
MB39A104
−6
≥ 6.14
CH2
CL ≥
2πf (∆VO− ∆IL× ESR)
≥
2π× 500 × 10
≥ 7.83
Ripple current
CH1
ICLrms ≥
≥
≥ 141.7 mArms
CH2
ICLrms ≥
≥
µF
∆IL
0.364
3
× (0.033 − 0.364 × 0.05)
µF
(V
IN− VO) ton
2√3L
(19 − 5) × 0.263
× 15 × 10−6 × 500 × 10
2√3
(V
IN− VO) ton
2√3L
(19 − 3.3) × 0.174
× 15 × 10−6 × 500 × 10
2√3
3
3
≥ 105.1 mArms
31
MB39A104
REFERENCE DATA
■
TOTAL Efficiency vs. Input Voltage
100
90
80
70
60
50
40
TOTAL efficiency η (%)
30
10 m100 m110
Input voltage VIN (V)
Each CH Efficiency vs. Input Voltage
100
90
80
Ta = +25 °C
5 V Output
SW1 = OFF
SW2 = ON
Vin = 7 V
Vin = 10 V
Vin = 12 V
Vin = 19 V
32
70
60
50
40
Each CH efficiency η (%)
30
10 m100 m110
Input voltage VIN (V)
Ta = +25 °C
3.3 V Output
SW1 = ON
SW2 = OFF
Vin = 7 V
Vin = 10 V
Vin = 12 V
Vin = 19 V
(Continued)
(Continued)
MB39A104
Switching Wave Form (CH1)
VG (V)
V
S (V)
VG (V)
15
10
5
0
15
10
5
0
012345678910
Switching Wave Form (CH2)
15
10
5
Ta =+25 °C
VIN = 12 V
CTL = 5 V
O= 5 V
V
RL = 1.67 Ω
t (µs)
Ta =+25 °C
VIN = 12 V
CTL = 5 V
O= 3.3 V
V
RL = 1.1 Ω
V
S (V)
0
15
10
5
0
012345678910
t (µs)
33
MB39A104
■ USAGE PRECAUTION
••••
Printed circuit board ground lines should be set up with consideration for common impedance.
••••
Take appropriate static electricity measures.
• Containers for semiconductor materials should hav e anti-static protection or be made of conductive material.
• After mounting, printed circuit boards should be stored and shipped in conductive bags or containers.
• Work platforms, tools, and instruments should be properly grounded.
• Working personnel should be grounded with resistance of 250 kΩ to 1 MΩ between body and ground.
••••
Do not apply negative voltages.
The use of negative voltages below –0.3 V may create parasitic transistors on LSI lines, which can cause
abnormal operation.
■ ORDERING INFORMATION
Part numberPackageRemarks
MB39A104PFV
24-pin plastic SSOP
(FPT-24P-M03)
34
■ PACKAGE DIMENSIONS
24-pin plastic SSOP
(FPT-24P-M03)
MB39A104
Note 1) *1 : Resin protrusion. (Each side : +0.15 (.006) MAX) .
Note 2) *2 : These dimensions do not include resin protrusion.
Note 3) Pins width and pins thickness include plating thickness.
Note 4) Pins width do not include tie bar cutting remainder.
1
*
7.75±0.10(.305±.004)
INDEX
112
0.65(.026)
C
2003 FUJITSU LIMITED F24018S-c-4-5
0.24
.009
0.10(.004)
0.10(.004)
+0.08
–0.07
+.003
–.003
0.13(.005)
1324
2
5.60±0.10 7.60±0.20
*
(.220±.004) (.299±.008)
M
0.17±0.03
(.007±.001)
"A"
Details of "A" part
+0.20
–0.10
1.25
+.008
–.004
.049
0.25(.010)
0~8˚
0.50±0.20
(.020±.008)
0.60±0.15
(.024±.006)
(Mounting height)
0.10±0.10
(.004±.004)
(Stand off)
Dimensions in mm (inches)
Note : The values in parentheses are reference values.
35
MB39A104
FUJITSU LIMITED
All Rights Reserved.
The contents of this document are subject to change without notice.
Customers are advised to consult with FUJITSU sales
representatives before ordering.
The information, such as descriptions of function and application
circuit examples, in this document are presented solely for the
purpose of reference to show examples of operations and uses of
Fujitsu semiconductor device; Fujitsu does not warrant proper
operation of the device with respect to use based on such
information. When you develop equipment incorporating the
device based on such information, you must assume any
responsibility arising out of such use of the information. Fujitsu
assumes no liability for any damages whatsoever arising out of
the use of the information.
Any information in this document, including descriptions of
function and schematic diagrams, shall not be construed as license
of the use or exercise of any intellectual property right, such as
patent right or copyright, or any other right of Fujitsu or any third
party or does Fujitsu warrant non-infringement of any third-party’s
intellectual property right or other right by using such information.
Fujitsu assumes no liability for any infringement of the intellectual
property rights or other rights of third parties which would result
from the use of information contained herein.
The products described in this document are designed, developed
and manufactured as contemplated for general use, including
without limitation, ordinary industrial use, general office use,
personal use, and household use, but are not designed, developed
and manufactured as contemplated (1) for use accompanying fatal
risks or dangers that, unless extremely high safety is secured, could
have a serious effect to the public, and could lead directly to death,
personal injury, severe physical damage or other loss (i.e., nuclear
reaction control in nuclear facility, aircraft flight control, air traffic
control, mass transport control, medical life support system, missile
launch control in weapon system), or (2) for use requiring
extremely high reliability (i.e., submersible repeater and artificial
satellite).
Please note that Fujitsu will not be liable against you and/or any
third party for any claims or damages arising in connection with
above-mentioned uses of the products.
Any semiconductor devices have an inherent chance of failure. You
must protect against injury, damage or loss from such failures by
incorporating safety design measures into your facility and
equipment such as redundancy, fire protection, and prevention of
over-current levels and other abnormal operating conditions.
If any products described in this document represent goods or
technologies subject to certain restrictions on export under the
Foreign Exchange and Foreign Trade Law of Japan, the prior
authorization by Japanese government will be required for export
of those products from Japan.
F0308
FUJITSU LIMITED Printed in Japan
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