Fujitsu MB3891 User Manual

FUJITSU SEMICONDUCTOR

DATA SHEET

DS04-27801-1E

ASSP For Po wer Management Applications (Mobile Phones)

Power Management IC
fo r GSM Mobile Phone

MB3891

DESCRIPTION

■■■■

MB3891 is intended to be used in future GSM-phones, Dual Band phones and Dual Mode phones. It contains all
the necessary functions to support all Digital, Analog and RF bloc ks in these phones. A Charge-pump including
a Logic Level Translation circuit is built in to support SIM-card (SmartCard) of both 3 and 5 Volt technology. The
circuit contains a charger for a rechargeable Lithium coin cell of a Real Time Clock.

A complex control circuit is built in to generate main reset and to turn on and off the different LDO’s.

FEATURES

■■■■

• Supply voltage range : 3 V to 5.5 V

• Low power consumption current during standby : 400 µA (MAX)

• 6-channel low-saturation voltage type series regulator
: 2.1 V/2 channels, 2.8 V/3 channels, 2.5 V/2.8 V switch

• Error prevention function during Low voltage

• Power on reset function

• 3 V/5 V SW for SIM-Card

• SIM interface function

• Backflow prevention function for Battery-Backup

• Temperature prevention function

PACKAGE

■■■■

64-pin plastic LQFP

(FPT-64P-M03)

MB3891

PIN ASSIGNMENT

■■■■

48 : SW3-INPUT

47 : SW3-OUTPUT

46 : SW1-INPUT

(TOP VIEW)

45 : SW1-OUTPUT

44 : CONT4

43 : VBAT4

42 : VBAT4

41 : OUT4

40 : OUT4

39 : GND4

38 : SIM-IO

37 : CLK

36 : RST

35 : µP-IO

34 : CLK-IN

33 : RESET-IN

N.C. : 49
N.C. : 50

SW2-OUTPUT : 51

SW2-INPUT : 52

SW1-ON : 53
SW2-ON : 54
SW3-ON : 55

CONT3 : 56
CONT5 : 57

OUT5 : 58

GND5 : 59
VBAT3 : 60
VBAT3 : 61
VBAT3 : 62

N.C. : 63
N.C. : 64

32 : GND-VSIM
31 : VCAP−
30 : VCAP+
29 : VSIMOUT
28 : OSC
27 : SIMPROG
26 : VSIM-ON
25 : VCC-VSIM
24 : REF-OUT
23 : VFIL
22 : VREF
21 : V-BACKUP
20 : VBAT2
19 : GND1
18 : DELAYCAP
17 : XPOWERGOOD

N.C. : 1

N.C. : 2

OUT3 : 3

OUT3 : 4

OUT2 : 6

GND3 : 5

OUT2 : 7

VBAT1 : 8

VBAT1 : 9

VBAT1 : 10

VBAT1 : 11

OUT1 : 12

OUT1 : 13

CONT1 : 14

CONT6 : 15

CONT2 : 16

(FPT-64P-M03)

2

MB3891

PIN DESCRIPTION

■■■■

Pin No. Symbol I/O Descriptions

1, 2 N.C.  Non connection.
3, 4 OUT3 O LDO3 output pin.

5GND3 LDO3 ground pin.

6, 7 OUT2 O LDO2 output pin.

8, 9, 10, 11 VBAT1  Battery voltage input pin for LDO1 and LDO2.

12, 13 OUT1 O LDO1 output pin.

14 CONT1 I Power on input from keypad (Active low, Pulled up to VBAT2).
15 CONT6 I “CONT6” input from digital system µP (Active high).
16 CONT2 I External accessory supply voltage Enable (Active high).
17 XPOWERGOOD O Generates the main reset. (Active low, when OUT1 is out of regulation).
18 DELAYCAP  Timing capacitor for XPOWERGOOD delay.
19 GND1  LDO1, LDO2, V-BACKUP, Reference and System ground pin.

20 VBAT2 
21 V-BACKUP O Supply voltage for Charger for rechargeable Lithium coin cell.

22 VREF O Supply voltage for Reference.
23 VFIL O Reference voltage Filter.
24 REF-OUT O Reference output voltage (Present when BACKUP UVLO is high).
25 VCC-VSIM  Input voltage for charge pump. (Supplied by VBAT1).
26 VSIM-ON I VSIM supply Enable (Active high).
27 SIMPROG I VSIM programming: Low = 3 V SIM, High = 5 V SIM.
28 OSC  Oscillator output pin.
29 VSIMOUT O Supply voltage for 3 or 5 V SIM-Card (SmartCard).
30 VCAP+Positive side of boost capacitor.
31 VCAP−Negative side of boost capacitor.
32 GND-VSIM  3 or 5 V SIM-Card (SmartCard) ground pin.
33 RESET-IN I Non level shifted SIM reset (µP side).
34 CLK-IN I Non level shifted clock (µP side).
35 µP-IO I/O Non level shifted bi-directional data input/output (µP side).
36 RST O Level shifted SIM reset (SmartCard side).
37 CLK O Level shifted SIM clock (SmartCard side).

Battery voltage input pin for both UVLO’s, Reference and V-BACKUP
LDO.

38 SIM-IO I/O Level shifted bi-directional SIM data input/output (SmartCard side).
39 GND4  LDO4 ground pin.

40, 41 OUT4 O LDO4 output pin.

(Continued)

3

MB3891

(Continued)

Pin No. Symbol I/O Descriptions

42, 43 VBAT4  Supply voltage for LDO4.

44 CONT4 I OUT4 output voltage selection (“L”=2.8 V,“H”=2.5 V).
45 SW1-OUTPUT O Output of general purpose switch number 1 (Drain).
46 SW1-INPUT I Input of general purpose switch number 1 (Source).
47 SW3-OUTPUT O Output of general purpose switch number 3 (Drain).
48 SW3-INPUT I Input of general purpose switch number 3 (Source).

49, 50 N.C.  Non connection.

51 SW2-OUTPUT O Output of general purpose switch number 2 (Drain).
52 SW2-INPUT I Input of general purpose switch number 2 (Source).
53 SW1-ON I General purpose switch number 1 Enable (Active high).
54 SW2-ON I General purpose switch number 2 Enable (Active high).
55 SW3-ON I General purpose switch number 3 Enable (Active high).
56 CONT3 I OUT3 and OUT4 supply voltage Enable (Active high).
57 CONT5 I OUT5 supply voltage Enable (Active high).
58 OUT5 O Output terminal of LDO5.
59 GND5  LDO5 ground pin.

60, 61, 62 VBAT3  Supply voltage for LDO and LDO5.

63, 64 N.C.  Non connection.

4

BLOCK DIAGRAM

■■■■

VBAT2 VBAT1

20

8 9 10 11

MB3891

CONT1

CONT6

CONT2

SW1-ON

SW2-ON

SW3-ON

CONT3

CONT5

CONT4

14

15

16

53

54

55

56

57

44

Main

UVLO

Over

Temp

Protection

SW1

SW2

SW3

LDO1

ON

LDO2

ON

LDO3

ON

OUT

OUT

OUT

POR

12

OUT1

13

XPOWERGOOD

17

DELAYCAP

18

GND1

19

6

OUT2

7

SW1-INPUT

46

SW1-OUTPUT

45
52

SW2-INPUT

51

SW2-OUTPUT

48

SW3-INPUT

47

SW3-OUTPUT

60
61

VBAT3

62

3

OUT3

4

VREF

VFIL

REF-OUT

RESET-IN

CLK-IN

µP-IO

RST
CLK

SIM-IO

VCC-VSIM

VSIM-ON

SIMPROG

OSC

22

23

24

33
34
35

36
37
38

25
26

27
28

VREF

GSM/SIM

Logic
Level

Translation

32

GND-VSIM

VREF-AMP

+

−

VSIMOUT

Charge-pump

29

VSIMOUT

BACKUP

UVLO

LDO4

OUT

ON
CONT4

LDO5

OUT

ON

LDO6

OUT

ON

N.C.
Pin : 1, 2, 49, 50, 63, 64

5

GND3

42

VBAT4

43
40

OUT4

41

GND4

39

58

OUT5

59

GND5

V-BACKUP

21

30

VCAP+

31

VCAP−

5

MB3891

ABSOLUTE MAXIMUM RATINGS

■■■■

Parameter Symbol Conditions

Unit

Min. Max.

VBAT −0.3 7 V

Power supply voltage

VCC-VSIM −0.3 7 V

Rating

I

O OUT1 pin  120 mA

IO OUT2 pin  50 mA

LDO regulator

I

O OUT3 pin  100 mA

I

O OUT4 pin  100 mA

IO OUT5 pin  50 mA
VSIMOUT chargepump I
Power dissipation P

O VSIMOUT pin  10 mA

D Ta ≤ +25 °C  800* mW

Storage temperature Tstg −55 +125 °C

* : The packages are mounted on the dual-sided epoxy board(10 cm × 10 cm)
WARNING: Semiconductor devices can be permanently damaged by application of stress (voltage, current,

temperature, etc.) in excess of absolute maximum ratings. Do not exceed these ratings.

RECOMMENDED OPERATING CONDITIONS

■■■■

Value

Parameter Symbol Conditions

Min. Typ. Max.

Unit

Power supply voltage

VBAT  3.0 3.6 5.5 V

VCC-VSIM  3.0 3.6 5.5 V
LDO capacitor guarantee value C
REF-OUT capacitor guarantee

value
VSIMOUT capacitor guarantee

value

O OUT1 to OUT5, V-BACKUP pin 0.8 1.0 µF

CO REF-OUT pin  0.027 µF

C

O VSIMOUT pin  10 µF

Operating ambient temperature Ta −20 +25 +85 °C

WARNING: The recommended operating conditions are required in order to ensure the normal operation of the

semiconductor device. All of the device’s electrical characteristics are warranted when the device is
operated within these ranges.

Always use semiconductor devices within their recommended operating condition ranges. Operation
outside these ranges may adversely affect reliability and could result in device failure.

No warranty is made with respect to uses, operating conditions, or combinations not represented on
the data sheet. Users considering application outside the listed conditions are advised to contact their
FUJITSU representatives beforehand.

6

ELECTRICAL CHARACTERISTICS

■■■■

Parameter Symbol Pin No. Conditions

MB3891

(Ta = +25 °C, VBAT1 to VBAT4 = VCC-VSIM = 3.6 V)

Value

Unit

Min. Typ. Max.

General

Shutdown supply
current

Standby supply
current

Operating ground
current

UVLO threshold
voltage

BACKUP UVLO
threshold voltage

I

BAT1

I

BAT2

I

BAT3

I

GND

8, 9, 10, 11,

20, 42, 43,

60, 61, 62

8, 9, 10, 11,

20, 42, 43,

60, 61, 62

8, 9, 10, 11,

20, 42, 43,

60, 61, 62

4, 5, 19,

32, 59

UVLO = “L”,
BACKUP UVLO = “L”

UVLO = “L”,
BACKUP UVLO = “H”

All circuit’s = On
(No load)

All circuit’s -VSIM =
On Max. load on all
regulators

80 µA

160 µA

400 µA

10 mA

8, 9, 10, 11,

THH

V

20, 42, 43,

OUT1 = ON 2.980 3.080 3.180 V

60, 61, 62

8, 9, 10, 11,

V

THL

20, 42, 43,

OUT1 = OFF 2.780 2.880 2.980 V

60, 61, 62

8, 9, 10, 11,

V

THH

20, 42, 43,

V-BACKUP = ON 2.980 3.080 3.180 V

60, 61, 62

8, 9, 10, 11,

V

THL

20, 42, 43,

V-BACKUP = OFF 2.580 2.680 2.780 V

60, 61, 62

V

IH 16, 56, 57 

0.7 ×

OUT1

VIL 16, 56, 57  0 

 OUT1 V

0.3 ×

OUT1

V

Input voltage

Pull-up resistor

Pull-down resistor RPD 15, 53, 54, 55 200*  kΩ

* : Standard design value

V

IH 14, 15, 44 

V

IL 14, 15, 44  0 

VIH 26, 27 

V

IL 26, 27  0 

R

PU 17 15*  kΩ

R

PU 14, 57 200*  kΩ

0.7 ×

VBAT

0.7 ×

VCC-VSIM

 VBAT V

0.3 ×

VBAT

VCC-VSIM



0.3 ×

VCC-VSIM

(Continued)

V

V

V

7

MB3891

Parameter Symbol

Output voltage V
Line regulation Line 12, 13 3.1 V < VBAT1 < 5.5 V 10 mV
Load reguration Load 12, 13 −50 µA > OUT1 > −120 mA 30 mV

(Ta = +25 °C, VBAT1 to VBAT4 = VCC-VSIM = 3.6 V)

Pin
No.

O 12, 13 −50 µA > OUT1 > −120 mA 2.000 2.100 2.200 V

Conditions

Value

Unit

Min. Typ. Max.

LDO1

(OUT1)

XPOWER-

GOOD

(RESET)

LDO2

(OUT2)

Ripple rejection
∆VBAT1/∆OUT1

Dropout voltage V
GND current at low load I
GND current at max. load I

Output noise volt. (RMS) VNOVL 12, 13

R.R 12, 13 f = 217 Hz 45 dB

DO 12, 13 OUT1 = −120 mA 500 mV
GND 19 OUT1 > −1 mA 30 µA
GND 19 OUT1 = −120 mA  2mA

f = 10 Hz to 1 MHz,
OUT1 = 1 µF

V

OH 17 

500 µV

0.8 ×

OUT1

 OUT1 V

Output voltage

V

OL 17  0 

0.1 ×

OUT1

V

Hold time TXPG 17 DELAYCAP = 0.033 µF102540ms
Output voltage V

O 6, 7 −50 µA > OUT2 > −50 mA 2.700 2.800 2.900 V

Line regulation Line 6, 7 3.1 V < VBAT1 < 5.5 V 10 mV
Load regulation Load 6, 7 −50 µA > OUT2 > −50 mA 30 mV
Ripple rejection

∆VBAT1/∆OUT2
Dropout voltage V
GND current at low load I

R.R 6, 7 f = 217 Hz 45 dB

DO 6, 7 OUT2 = −50 mA 250 mV
GND 19 OUT2 > −1 mA 30 µA

GND current at max. load IGND 19 OUT2 = −50 mA 1mA

8

General
purpose

switches

Output noise volt. (RMS) V

Input/Output resistance

NOVL 6, 7

R

SW1 45, 46

RSW2 51, 52

R

SW3 47, 48

f = 10 Hz to 1 MHz,
OUT2 = 1 µF

SW1-INPUT = 2.8 V
(Gate/Source = 2.8 V)

SW2-INPUT = 2.8 V
(Gate/Source = 2.8 V)

SW3-INPUT = 2.8 V
(Gate/Source = 2.8 V)

350 µV

4.0 Ω

7.0 Ω

7.0 Ω

(Continued)

MB3891

(Ta = +25 °C, VBAT1 to VBAT4 = VCC-VSIM = 3.6 V)

Parameter Symbol Pin No. Conditions

Output voltage V

O 3, 4 −50 µA > OUT3 > −100 mA 2.700 2.800 2.900 V

Line regulation Line 3, 4 3.1 V < VBAT3 < 5.5 V 10 mV
Load regulation Load 3, 4 −50 µA > OUT3 > −100 mA 30 mV

Value

Unit

Min. Typ. Max.

LDO3

(OUT3)

LDO4

(OUT4)

Ripple rejection
∆VBAT3/∆OUT3

Dropout voltage V
GND current at low load I
GND current at max.

load
Output noise volt. (RMS) V

R.R 3, 4 f = 217 Hz 45 dB

DO 3, 4 OUT3 = −100 mA 250 mV

GND 5OUT3 > −1 mA 30 µA

I

GND 5OUT3 = −100 mA  2mA

NOVL 3, 4

V

O 40, 41

f = 10 Hz to 1 MHz,
OUT3 = 1 µF

−50 µA > OUT4 > −100 mA,
CONT4 = “L”

350 µV

2.700 2.800 2.900 V

Output voltage

VO 40, 41

−50 µA > OUT4 > −100 mA,
CONT4 = “H”

2.400 2.500 2.600 V

Line regulation Line 40, 41 3.1 V < VBAT4 < 5.5 V 10 mV
Load regulation Load 40, 41 −50 µA > OUT4 > −100 mA 30 mV
Ripple rejection

∆VBAT4 - OUT4/∆OUT4
Dropout voltage V
GND current at low load I
GND current at max.

load
Output noise volt. (RMS) VNOVL 40, 41

R.R 40, 41 f = 217 Hz 45 dB

DO 40, 41 OUT4 = −100 mA 250 mV

GND 39 OUT4 > −1 mA 30 µA

I

GND 39 OUT4 = −100 mA  2mA

f = 10 Hz to 1 MHz,
OUT4 = 1 µF

500 µV

LDO5

(OUT5)

Output voltage V

O 58 −50 µA > OUT5 > −50 mA 2.700 2.800 2.900 V

Line regulation Line 58 3.1 V < VBAT3 < 5.5 V 10 mV
Load regulation Load 58 −50 µA > OUT5 > −50 mA 30 mV
Ripple rejection

∆VBAT3/∆OUT5
Dropout voltage V
GND current at low load I
GND current at max.

load
Output noise volt. (RMS) V

R.R 58 f = 217 Hz 45 dB

DO 58 OUT5 = −50 mA 250 mV

GND 59 OUT5 > −500 µA 20 µA

IGND 59 OUT5 = −50 mA  1mA

NOVL 58

f = 10 Hz to 1 MHz,
OUT5 = 1 µF

350 µV

(Continued)

9

MB3891

Parameter Symbol Pin No. Conditions

Output voltage V
Line regulation Line 21 3.1 V < VBAT2 < 5.5 V 10 mV

O 21

(Ta = +25 °C, VBAT1 to VBAT4 = VCC-VSIM = 3.6 V)

Value

Min. Typ. Max.

−10 µA > V-BACKUP
> −250 µA

2.000 2.100 2.200 V

Unit

LDO6

(V-BACKUP)

REF-OUT

Load regulation Load 21

−10 µA > V-BACKUP
> −250 µA

30 mV

Ripple rejection
∆VBAT2/

R.R 21 f = 217 Hz 25 dB

∆V-BACKUP
GND current at

low load
GND current at

max. load
Output noise volt.

(RMS)
Reverse current IRC 21
Output voltage V

I

GND 19 V-BACKUP > −10 µA 10 µA

I

GND 19 V-BACKUP = −250 µA 50 µA

V

NOVL 21

O 24 0 µA > REF-OUT > −50 µA 1.200 1.225 1.250 V

f = 10 Hz to 1 MHz,
V-BACKUP = 1 µF

VBAT2 = 0 V,
V-BACKUP = 3.0 V

500 µV

100 nA

Line regulation Line 24 3.1 V < VBAT2 < 5.5 V 10 mV
Load regulation Load 24 0 µA > REF-OUT > −50 µA  6mV
Ripple rejection

∆VBAT2/

R.R 24 f = 217 Hz 50 dB

∆REF-OUT
Output noise volt.

(RMS)

V

NOVL 24

f = 10 Hz to 1 MHz,
REF-OUT = 27 nF

250 µV

VSIMOUT

chargepump

10

O 29

V

−50 µA > VSIMOUT > −10 mA,
SIMPROG = “H”

4.600 5.000 5.400 V

Output voltage

VO 29

−50 µA > VSIMOUT > −10 mA,
SIMPROG = “L”

2.760 3.000 3.240 V

Line regulation Line 29 3.1 V < VCC-VSIM < 5.5 V 50 mV
Load regulation Load 29 −50 µA > VSIMOUT > −10 mA 100 mV

(Continued)

(Ta = +25 °C, VBAT1 to VBAT4 = VCC-VSIM = 3.6 V)

Parameter Symbol Pin No. Conditions

Ripple rejection
∆VCC-VSIM/

R.R 29 f = 217 Hz 30 dB

∆VSIMOUT

MB3891

Value

Unit

Min. Typ. Max.

VSIMOUT

chargepump

GSM/SIM
logic level

translation

µp interface

Output current

GND current at
no load

Efficiency at
max. load

Output ripple
voltage

Shutdown sup­ply current

Input voltage

Output voltage

I

O 29

I

O 29

3.1 V < VCC-VSIM < 5.5 V,
VSIMOUT = 5 V

3.1 V < VCC-VSIM < 5.5 V,
VSIMOUT = 3 V

10 mA

6 mA

IGND 32 VSIMOUT > −50 µA 100 µA

η 25, 29

V

RP 29

VSIMOUT = −10 mA,
VSIMOUT = 5 V

f = 10 Hz to 1 MHz,
VSIMOUT = 10 µF

85 %

100

mV

ILDO 25 VSIM-ON = “L” 100 nA

V

V

V

33, 34,

IH

IL

OH 35 µP-IO (max.) = −20 µA

35

33, 34,

35



 0 

VOL 35 µP-IO (max.) = 1 mA 0 

0.7 ×

OUT1

0.8 ×

OUT1

 OUT1 V

0.3 ×

OUT1

 OUT1 V

0.2 ×

OUT1

V

V

(Continued)

PP

11

MB3891

(Continued)

Parameter Symbol Pin No. Conditions

(Ta = +25 °C, VBAT1 to VBAT4 = VCC-VSIM = 3.6 V)

Value

Unit

Min. Typ. Max.

SIM

interface

5 V

(SIMPROG

= H)

Output voltage

V
V

Rise time T

OH 36 RST (max.) = −20 µA
OL 36 RST (max.) = 200 µA0 0.6 V

R 36 RESET-IN = RST = 30 pF 400 µs

VSIMOUT

− 0.7



VSIMOUT

V

Fall time TF 36 RESET-IN = RST = 30 pF 400 µs

0.7 ×

VSIMOUT

 VSIMOUT V

Output voltage

OH 37 CLK (max.) = −20 µA

V
V

OL 37 CLK (max.) = 200 µA0 0.5 V

Rise time TR 37 CLK-IN = CLK = 30 pF 27 ns
Fall time T

F 37 CLK-IN = CLK = 30 pF 27 ns

OH 38 SIM-IO (max.) = −20 µA3.8  VSIMOUT V

V

Output voltage

VOL 38 SIM-IO (max.) = 1 mA 0  0.4 V

0.7 ×

VSIMOUT

 VSIMOUT V

Input voltage

IH 38 

V
V

IL 38  0  0.8 V

Rise time TR 38 SIM-IO = 30 pF 1 µs
Fall time T

F 38 SIM-IO = 30 pF 1 µs

V

OH 36 RST (max.) = −20 µA

0.8 ×

VSIMOUT

 VSIMOUT V

Output voltage

V

OL 36 RST (max.) = 200 µA0

0.2 ×

VSIMOUT

V

Rise time TR 36 RESET-IN = RST = 30 pF 400 µs

(SIMPROG

12

SIM

interface

3 V

= L)

Fall time T

F 36 RESET-IN = RST = 30 pF 400 µs

OH 37 CLK (max.) = −20 µA

V

0.7 ×

VSIMOUT

 VSIMOUT V

Output voltage

VOL 37 CLK (max.) = 200 µA0

Rise time T
Fall time T

VOH 38 SIM-IO (max.) = −20 µA

Output voltage

V

R 37 CLK-IN = CLK = 30 pF 50 ns
F 37 CLK-IN = CLK = 30 pF 50 ns

0.7 ×

VSIMOUT

OL 38 SIM-IO (max.) = 1 mA 0  0.4 V

IH 38 

V

0.7 ×

VSIMOUT

 VSIMOUT V

 VSIMOUT V

0.2 ×

VSIMOUT

V

Input voltage

V

IL 38  0 

0.2 ×

VSIMOUT

V

Rise time TR 38 SIM-IO = 30 pF 1 µs
Fall time T

F 38 SIM-IO = 30 pF 1 µs

TYPICAL CHARACTERISTICS

■■■■

Power supply current vs. power supply voltage Power supply current vs. power supply voltage

MB3891

400

Ta = +25 °C
CONT1 = “L”

350

CONT2 = “H”
CONT3 = “H”

300

CONT4 = OPEN
CONT5 = OPEN

250

CONT6 = OPEN
VSIM-ON = “H”

200

SIMPROG = “H”

150
100

50

0

012

Power supply current IBAT (µA)

V-BACKUP = No load

VSIMOUT = No load

345

Power supply voltage V

Power supply current , GND current vs.

power supply voltage

450
400
350
300
250
200
150
100

50

0

Power supply current IBAT (mA)

Ta = +25 °C
CONT1 = OPEN
CONT2 = “H”
CONT3 = “H”
CONT4 = OPEN
CONT5 = OPEN
CONT6 = “H”
VSIM-ON = “H”
SIMPROG = “H”

0

12345

IBAT

V-BACKUP = 8.4 kΩ

VSIMOUT = 510 Ω

Power supply voltage VBAT (V)

350

Ta = +25 °C
CONT1 = OPEN

300

CONT2 = “H”

BAT (µA)

OUT1 = No load
OUT2 = No load
OUT3 = No load
OUT4 = No load
OUT5 = No load

Power supply current I

BAT (V) Power supply voltage VBAT (V)

CONT3 = “H”

250

CONT4 = OPEN
CONT5 = OPEN
CONT6 = “H”

200

VSIM-ON = “H”
SIMPROG = “H”

150
100

50

0

012345

V-BACKUP = No load

VSIMOUT = No load

Output voltage vs. power supply

voltage (LDO1)

3.0

)

2.5

OUT1 (V

2.0

1.5

1.0

0.5

Output voltage V

0.0
01234567

Ta = +25 °C
OUT1 = 1 µF
CONT1 = OPEN
CONT6 =

IGND

OUT1 = 18 Ω
OUT2 = 56 Ω
OUT3 = 28 Ω
OUT4 = 28 Ω
OUT5 = 56 Ω

450
400
350
300
250
200
150
100
50
0

GND current IGND (µA)

Power supply voltage VBAT (V)

OUT1 = No load
OUT2 = No load
OUT3 = No load
OUT4 = No load
OUT5 = No load

“H”

Output voltage vs. power supply voltage (LDO1)

3.0
Ta = +25 °C

OUT1 = 1 µF

2.5
CONT1 =

CONT6 = OPEN

2.0

1.5

1.0

0.5

“L”

Output voltage VOUT1 (V)

0.0

012345

Power supply voltage V

BAT (V)

Output voltage vs. load current (LDO1)

2.2

2.1

2.0

1.9
Ta = +25 °C

1.8

Output voltage VOUT1 (V)

1.7

0 −100 −200 −300 −500−400 −600 −700 −800

Load current I

VBAT = 3.6 V
CONT1 =
CONT6 = OPEN

LOAD (mA)

“L”

(Continued)

13

MB3891

Ripple rejection vs. frequency (LDO1) Ripple rejection vs. frequency (LDO1)

0

−20

−40

−60

−80

Ripple rejection R.R (dBm)

−100
10 100 1 k 10 k 100 k 1 M

Frequency f (Hz) Frequency f (Hz)

Dropout voltage vs. load current (LDO1)

0.6
VBAT = 2.1 V

CONT1 = OPEN

0.5

CONT6 =

0.4

0.3

0.2

0.1

“H”

Dropout voltage VDO (V)

0.0

0 −50 −100 −150 −200

Load current ILOAD (mA)

Ta = +25 °C
VBAT = 3.6 V
OUT1 = 1 µF
OUT1 = 18 Ω
CONT1 =
CONT6 = OPEN

Ta = +85 °C

Ta = +25 °C

“L”

Ta = −20 °C

0

Ta = +25 °C
VBAT = 3.6 V

−20

OUT1 = 1 µF
CONT1 =
CONT6 = OPEN

−40

−60

−80

Ripple rejection R.R (dBm)

−100
10 100 1 k 10 k 100 k 1 M

“L”

Output voltage vs. ambient temperature (LDO1)

2.13

2.12

2.11

2.10

2.09

VBAT = 3.6 V
CONT1 = OPEN
CONT6 =

Output voltage VOUT1 (V)

2.08

−40 −20 0 20 40 60 80 100

Ambient temperature Ta ( °C)

“H”

14

Output voltage rising waveforms (LDO1)

10

5
0

VBAT

OUT1

Power supply voltage VBAT

Ta = +25°C
OUT1 = 18 Ω
CONT1 =
CONT6 = OPEN

0.0 0.5 1.0

1.5

2.0

3.0 3.5 4.0 4.5 5.0

2.5

t (ms)

“L”

2.0

1.5

1.0

0.5

0.0

Output voltage VOUT1 (V)

MB3891

Output voltage falling waveforms (LDO1)

BAT (V)

4
3
2
1
0

Power supply voltage V

0 50 100 150 200 250 300

Ta = +25°C
OUT1 = No load
CONT1 = “L”
CONT6 = OPEN

VBAT

OUT1

350

t (ms)

Output voltage rising waveforms (LDO1)

4
2
0

CONT1

OUT1

Input voltage VCONT1 (V)

Ta = +25°C
VBAT = 3.6 V
OUT1 = 18 Ω
CONT6 = OPEN

020406080 100 120 140 160 180

t (µs)

400 450 500

200

2
1
0

Output voltage VOUT1 (V)

2
1
0

Output voltage VOUT1 (V)

Output voltage falling waveforms (LDO1)

Ta = +25°C

VBAT

OUT1

VBAT = 1 µF
OUT1 = No load
CONT1 =
CONT6 = OPEN

4
2
0

Power supply voltage VBAT (V)

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8

t (s)

Output voltage falling waveforms (LDO1)

10

5

CONT1 (V)

0

CONT1

Ta = +25°C
VBAT = 3.6 V
OUT1 = No load
CONT6 = OPEN

Input voltage V

OUT1

0

20 40 60 80

100 120 140 160 180 200

t (ms)

“L”

2.0

OUT1 (V)

2
1
0

Output voltage V

2.0

OUT1 (V)

1.5

1.0

0.5

0.0

Output voltage V

Waveform at rapid change of output load

(LDO1)

2.0

1.5

1.0

0.5

0.0

Ta = +25°C
VBAT = 3.6 V
CONT1 =
CONT6 = OPEN

Output voltage VOUT1 (V)

OUT1 = 0 A −120 mA

01020304050

60

70

t (µs)

OUT1

VC

80

“L”

90 100

[Measurement diagram]

VBAT = 3.6 V

VREF = 1.225 V

(IC internal)

2
1
0

NPN collector voltage VC (V)

LDO1

OUT1

1 µF

120 mA

VC

4 V
0 V

(Continued)

15

MB3891

Waveform at rapid change of output load (LDO1)

2.0

1.5

1.0

0.5

0.0

Output voltage VOUT1 (V)

0.0 0.5

OUT1 = −120 mA 0 A

1.5 2.0 2.5

1.0

OUT1

VC

Ta = +25°C
VBAT = 3.6 V
CONT1 = “L”
CONT6 = OPEN

3.5 4.0 4.5

3.0

5.0

t (ms)

Waveform at rapid change of output load (LDO2)

3.0

2.5

2.0

1.5

1.0

0.5

Output voltage VOUT2 (V)

0.0

OUT2 = 0 A −50 mA

0 102030405060708090100

OUT2

Ta = +25°C
VBAT = 3.6 V
CONT1 =
CONT2 = “H”
CONT6 = OPEN

“L”

V

C

t (µs)

[Measurement diagram]

VREF = 1.225 V

(IC internal)

2
1
0

NPN Collector voltage VC (V)

[Measurement diagram]

VREF = 1.225 V

(IC internal)

3
2
1
0

NPN Collector voltage VC (V)

VBAT = 3.6 V

LDO1

VBAT = 3.6 V

LDO2

OUT1

1 µF

OUT2

1 µF

120 mA

VC

4 V
0 V

50 mA

VC

4 V
0 V

16

Waveform at rapid change of output load (LDO2)

3.0

2.5

2.0

1.5

1.0

0.5

Output voltage VOUT2 (V)

0.0

OUT2 = −50 mA 0 A

0 102030405060708090100

OUT2

VC

Ta = +25°C
VBAT = 3.6 V
CONT1 =
CONT2 = “H”
CONT6 = OPEN

“L”

t (ms)

[Measurement diagram]

VREF = 1.225 V

(IC internal)

3
2
1
0

NPN Collector voltage VC (V)

VBAT = 3.6 V

LDO2

OUT2

1 µF

50 mA

VC

4 V
0 V

(Continued)

MB3891

Reference voltage vs. power supply voltage Reference voltage vs. ambient temperature

1.4

1.2

1.0

0.8

0.6

0.4

0.2

Reference voltage VFIL (V)

0.0
01234567

Power supply voltage V

Ta = +25 °C
VFIL = 0.1 µF

BAT (V) Ambient temperature Ta ( °C)

Power supply current vs. power supply voltage

(VSIMOUT Chargepump)

Power supply current ICC-VSIM (µA)

100000

10000

1000

100

10

1

012

Power supply voltage VCC-VSIM (V)

VSIMOUT = 510 Ω

VSIMOUT = No load

Ta = +25 °C
VBAT = 3.6 V
VSIM-ON =
SIMPROG = “H”

345

“H”

1.24

1.23

FIL (V)

1.22

1.21

1.20

1.19

Reference voltage V

−40 −20 0

20 40 60 80 100

VBAT = 3.6 V

Power supply current vs. power supply voltage

(VSIMOUT Chargepump)

100000

VSIMOUT = 510 Ω

VSIMOUT = No load

Ta = +25 °C
VBAT = 3.6 V
VSIM-ON =
SIMPROG = “L”

345

Power supply current ICC-VSIM (µA)

10000

1000

100

10

1

012

Power supply voltage VCC-VSIM (V)

“H”

Output voltage vs. power supply voltage

(VSIMOUT Chargepump)

5

SIMPROG = “H”

4

3

2

1

VSIMOUT = No load

SIMPROG = “L”
VSIMOUT = No load

Output voltage VSIMOUT (V)

0

012

34567

Power supply voltage V

Ta = +25 °C
VBAT = 3.6 V
VSIM-ON =

CC-VSIM (V)

“H”

(Continued)

17

MB3891

Output voltage vs. load current

(VSIMOUT Chargepump)

3.00

2.99

2.98

2.97

2.96

2.95

2.94

2.93

2.92

2.91

Output voltage VSIMOUT (V)

2.90

VCC-VISM = 5.5 V

VCC-VISM = 3.1 V

0 −5 −10 −15

Load current I

Ripple rejection vs. frequency

(VSIMOUT Chargepump)

0

−20

−40

Output voltage vs. load current

(VSIMOUT Chargepump)

Ta = +25 °C
VSIM-ON = “H”
SIMPROG = “L”

VCC-VISM = 3.6 V

−20

LOAD (mA) Load current ILOAD (mA)

5.00
Ta = +25 °C

4.95

VSIM-ON = “H”
SIMPROG = “H”

4.90

SIMOUT (V)

4.85

4.80

4.75

4.70

4.65

Output voltage V

4.60

VCC-VISM = 3.1 V

0 −5 −10 −15

VCC-VISM = 5.5 V

VCC-VISM
= 3.6 V

Ripple rejection vs. frequency

(VSIMOUT Chargepump)

0

Ta = +25 °C
VBAT = VCC-VSIM = 3.6 V

−20

−40

VSIM-ON = “H”
SIMPROG = “H”
VCAP+  VCAP− = 0.1 µF
VSIMOUT = 10 µF

−20

−60

−80

Ripple rejection R.R (dBm)

−100
10 100 1 k

Ta = +25 °C
VBAT = VCC-VSIM = 3.6 V
VSIM-ON = “H”
SIMPROG = “H”
VCAP+  VCAP− = 0.1 µF
VSIMOUT = 10 µF
VSIMOUT = 510 Ω

10 k 100 k 1 M

Frequency f (Hz)

Ripple rejection vs. frequency

(VSIMOUT Chargepump)

0

−20

−40

−60

−80

Ripple rejection R.R (dBm)

−100

10 100 1 k 10 k 100 k 1 M

Ta = +25 °C
VBAT = VCC-VSIM = 3.6 V
VSIM-ON =
SIMPROG = “L”
VCAP+  VCAP− = 0.1 µF
VSIMOUT = 10 µF
VSIMOUT = 510 Ω

Frequency f (Hz)

“H”

−60

−80

Ripple rejection R.R (dBm)

−100
10 100 1 k

10 k 100 k 1 M

Frequency f (Hz)

Ripple rejection vs. frequency

(VSIMOUT Chargepump)

0

Ta = +25 °C
VBAT = VCC-VSIM = 3.6 V

−20

−30

−40

−80

Ripple rejection R.R (dBm)

−100

VSIM-ON = “H”
SIMPROG = “L”
VCAP+  VCAP− = 0.1 µF
VSIMOUT = 10 µF

10 100 1 k 10 k 100 k 1 M

Frequency f (Hz)

18

(Continued)

MB3891

Efficiency vs. power supply voltage

(VSIMOUT Chargepump)

100

90
80
70
60
50
40
30

Efficiency η (%)

20
10

0

3.0 3.5 4.0

Power supply voltage V

Efficiency vs. load current
(VSIMOUT Chargepump)

100

90
80
70
60
50
40
30

Efficiency η (%)

20
10

0

0 −5 −10

VCC-VSIM = 5.5 V

VCC-VSIM = 3.1 V

Ta = +25 °C
VSIM-ON =
SIMPROG = “L”

ILOAD = −10 mA

ILOAD = −1 mA

4.5 5.0 5.5

CC-VSIM (V) Power supply voltage VCC-VSIM (V)

Ta = +25 °C
VBAT = VCC-VSIM = 3.6 V
VSIM-ON =
SIMPROG = “L”

“H”

VCC-VSIM = 3.6 V

−15 −20

Load current ILOAD (mA)

“H”

Efficiency vs. power supply voltage

100

90
80
70
60
50

Efficiency η (%)

100

Efficiency η (%)

40
30
20
10

0

90
80
70
60
50
40
30
20
10

0

ILOAD = −1 mA

3.0 3.5 4.0

VCC-VSIM = 3.1 V

VCC-VSIM = 3.6 V

0 −5 −10

(VSIMOUT Chargepump)

Ta = +25 °C
VSIM-ON = “H”
SIMPROG = “H”

ILOAD = −10 mA

4.5 5.0 5.5

Efficiency vs. load current
(VSIMOUT Chargepump)

VCC-VSIM = 5.5 V

Ta = +25 °C
VBAT = VCC-VSIM = 3.6 V
VSIM-ON =
SIMPROG = “H”

“H”

−15 −20

Load current ILOAD (mA)

Output voltage rising waveforms

(VSIMOUT Chargepump)

10

5
0

Input voltage VSIM-ON (V)

Ta = +25 °C
VBAT = VCC-VSIM = 3.6 V
SIMPROG =
VSIMOUT = 510 Ω

0.0 0.5 1.5 2.0 2.5 3.0 3.5

t (ms)

VSIM-ON
VSIMOUT

“H”

4.0

Output voltage rising waveforms

(VSIMOUT Chargepump)

10

5

Output voltage VSIMOUT (V)

0

Input voltage VSIM-ON (V)

Ta = +25 °C
VBAT = VCC-VSIM = 3.6 V
SIMPROG =
VSIMOUT = 510 Ω

0.0 0.5 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.01.0

5
4
3
2
1
0

4.5 5.01.0

VSIM-ON

VSIMOUT

“L”

SIMOUT (V)

3
2
1
0

Output voltage V

t (ms)

(Continued)

19

MB3891

10

5
0

Input voltage VSIMPROG (V)

10

5
0

Input voltage VSIM-ON (V)

Output voltage rising waveforms

(VSIMOUT Chargepump)

SIMPROG
VSIMOUT

Ta = +25 °C
VBAT = VCC-VSIM = 3.6 V
VSIMOUT = 510 Ω
VSIM-ON =

0.0 0.5 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.01.0

t (ms)

Output voltage falling waveforms

(VSIMOUT Chargepump)

Ta = +25 °C
VBAT = VCC-VSIM = 3.6 V
SIMPROG =
VSIMOUT = 510 Ω

VSIM-ON

VSIMOUT

“H”

“H”

5
4
3
2
1
0

Output voltage VSIMOUT (V)

SIM-ON (V)

5
4
3

Input voltage V

2
1
0

Output voltage VSIMOUT (V)

10

5
0

Input voltage VSIMPROG (V)

0.0 0.5 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.01.0

10

5
0

Output voltage falling waveforms

(VSIMOUT Chargepump)

SIMPROG

VSIMOUT

Ta = +25 °C
VBAT = VCC-SIM = 3.6 V
VSIMOUT = 510 Ω
VSIM-ON =

“H”

t (ms)

Output voltage falling waveforms

(VSIMOUT Chargepump)

Ta = +25 °C
VBAT = VCC-VSIM = 3.6 V
SIMPROG = “L”
VSIMOUT = 510 Ω

VSIM-ON

VSIMOUT

5

IMOUT (V)

4
3
2
1
0

Output voltage VS

SIMOUT (V)

3
2
1
0

Output voltage V

20

40
20

0

−20

−40

Output voltage VSIMOUT (mV)

0 5 15 20 25 30 35 40 45 5010

Output voltage waveforms
(VSIMOUT Chargepump)

Ta = +25 °C
VBAT = VCC-VSIM = 3.6 V
VSIM-ON = “H”
SIMPROG = “H”
VSIMOUT = No load
AC COUPLED

0 2 6 8 10 12 14 16 18 204

t (ms)

t (µs)

20

0

−20

Output voltage VSIMOUT (mV)

0 5 15 20 25 30 35 40 45 5010

Output voltage waveforms
(VSIMOUT Chargepump)

Ta = +25 °C
VBAT = VCC-SIM = 3.6 V
VSIM-ON =
SIMPROG = “L”
VSIMOUT = No load
AC COUPLED

0 2 6 8 10 12 14 16 18 204

“H”

t (ms)

t (µs)

(Continued)

MB3891

40
20

0

−20

−40

Output voltage VSIMOUT (mV)

40
20

0

−20

−40

Output voltage VSIMOUT (mV)

Output voltage waveforms

(VSIMOUT Chargepump)

Ta = +25 °C
VBAT = VCC-VSIM = 3.6 V
VSIM-ON =
SIMPROG = “L”
VSIMOUT = 510 Ω
AC COUPLED

0246810

t (µs)

Output voltage waveforms
(VSIMOUT Chargepump)

Ta = +25 °C
VBAT = VCC-VSIM = 3.6 V
VSIM-ON = “H”
SIMPROG = “H”
VSIMOUT = 510 Ω
AC COUPLED

12

“H”

14 16

18 20

20

0

−20

Output voltage VSIMOUT (mV)

0246

60
40
20

0

−20

−40

−60

Output voltage VSIMOUT (mV)

Output voltage waveforms
(VSIMOUT Chargepump)

Ta = +25 °C
VBAT = VCC-VSIM = 3.6 V
VSIM-ON = “H”
SIMPROG = “L”
VSIMOUT = 5.1 kΩ
AC COUPLED

81012

14 16

t (µs)

Output voltage waveforms
(VSIMOUT Chargepump)

Ta = +25 °C
VBAT = VCC-VSIM = 3.6 V
VSIM-ON =
SIMPROG = “H”
VSIMOUT = 5.1 kΩ
AC COUPLED

“H”

18

20

0 2 4 6 8 101214161820

t (µs)

Output voltage vs. input voltage (SIM Inter-

5

4

3

2

1

Output voltage VSIMIO (V)

0

0.0 0.5 1.0

SIMPROG = "H"

SIMPROG = "L"

Ta = +25 °C
VBAT = VCC-VSIM = 3.6 V
VSIM-ON = "H"
CONT1 = "L"
CONT6 = OPEN

1.5 2.0 2.5

Input voltage VUPIO (V)

0 2 4 6 8 101214161820

t (µs)

Output voltage vs. input voltage (SIM Interface)

2.5

2.0

1.5

1.0

0.5

Output voltage VUPIO (V)

0.0
012

Ta = +25 °C
VBAT = VCC-VSIM = 3.6 V
VSIM-ON = “H”
SIMPROG = “L” or “H”
CONT1 = “L”
CONT6 = OPEN

345

Input voltage VSIMIO (V)

(Continued)

21

MB3891

(Continued)

Output voltage vs. ambient temperature

(SIM Interface)

3.10

3.05

3.00

2.95

2.90

2.85

2.80

Output voltage VSIMOUT (V)

−40 −20 0

VBAT = VCC-VSIM = 3.6 V
VSIM-ON = “H”
SIMPROG = “L”

20 40 60 80 100

Ambient temperature Ta ( °C)

Power dissipation vs. ambient temperature

1000

800

600

Output voltage vs. ambient temperature

(SIM Interface)

5.00

4.95

4.90

4.85

4.80

4.75

4.70

Output voltage VSIMOUT (V)

−40 −20 0

VBAT = VCC-VSIM = 3.6 V
VSIM-ON = “H”
SIMPROG = “H”

20 40 60 80 100

Ambient temperature Ta ( °C)

400

200

Power dissipation PD (mW)

0

−40 −20 200

Ambient temperature Ta ( °C)

40 60 80 100

22

MB3891

FUNCTIONAL DESCRIPTION

■■■■

(1) MAIN UVLO/BACKUP UVLO

Transient power-on surge states or sudden drops in supply voltage (VBAT2) can cause an IC to operate abnor­mally , leading to destruction or damage to system elements. To prevent this type of fault, the undervoltage loc kout
circuits (UVLO/ Backup UVLO) will shut off the output from OUT1 to V-BACKUP if the supply voltage f alls belo w
the UVLO circuit threshold voltage (3.0 V/2.8 V typ .). System operation is restored as soon as the supply voltage
rises above the UVLO circuits threshold voltage (3.2 V typ.).

(2) LDO1

The LDO1 circuits uses the reference voltage supply and generates an output voltage (2.1 V typ.) at the OUT1
terminal (pin 12,13). Power can be dr awn from the OUT1 terminal for external use, up to a maximum load current
of 120 mA.

(3) XPOWERGOOD (RESET)

When the OUT1 terminal (pin 12,13) voltage exceeds 2.0 V (typ.), after a delay interval set by a capacitor
(C

DELAY CAP) connected to the DELAYCAP terminal (pin 18), the XPOWERGOOD terminal (pin 17) goes to “H”

level and resets the microcomputer. At the same time, the LDO2, LDO3, and LDO4 output is controlled ON/OFF.

(4) LDO2

The LDO2 circuit uses the reference voltage supply and generates an output voltage (2.8 V typ.) at the OUT2
terminal (pin 6,7) when the XPOWERGOOD terminal (pin 17) voltage is at “H” level and an “H” level signal is
input at the CONT2 terminal (pin 16). Power can be drawn from the OUT2 ter minal for external use, up to a
maximum load current of 50 mA.

(5) General Purpose switches

Any of the OUT terminals can be connected to any SW-INPUT terminal so that when the corresponding SW­ON terminal is at “H” level, the OUT terminal voltage can be dra wn from the associated SW-OUTPUT terminal.

(6) LDO3

The LDO3 circuits uses the reference voltage supply and generates an output voltage (2.8 V typ.) at the OUT3
terminal (pin 3,4) when the XPOWERGOOD terminal (pin 17) voltage is at “H” level and an “H” level signal is
input at the CONT3 terminal (pin 56). Power can be drawn from the OUT3 ter minal for external use, up to a
maximum load current of 100 mA.

(7) LDO4

The LDO4 circuits uses the reference voltage supply and generates an output voltage (2.8 V typ.) at the OUT4
terminal (pin 40,41) when the XPOWERGOOD terminal (pin 17) voltage is at “H” lev el and an “H” le v el signal is
input at the CONT3 terminal (pin 56) , and an “L” level signal is input at the CONT4 terminal (pin 44). When an
“H” level signal is input at the CONT4 terminal, the output voltage at the OUT4 terminal is 2.5 V (typ.). Power
can be drawn from the OUT4 terminal for external use, up to a maximum load current of 100 mA.

23

MB3891

(8) LDO5

The LDO5 circuits uses the reference voltage supply and generates an output voltage (2.8 V typ.) at the OUT5
terminal (pin 57) when the OUT1 terminal (pin 12,13) is in output state and an “H” level signal is input at the
CONT5 terminal (pin 57). Power can be dr awn from the OUT5 terminal for external use, up to a maximum load
current of 50 mA.

(9) LDO6

The LDO6 circuit uses the reference voltage supply and gener ates an output voltage (2.1 V typ.) at the V -BACKUP
terminal (pin 21). Power can be drawn for external use, from the V-BACKUP terminal, up to a maximum load
current of 250 µA.

(10) REF-OUT

This circuit uses the reference voltage generated by the reference voltage block (1.225 V typ.) to produce a
temperature compensated reference voltage (1.225 V typ.) at the REF-OUT terminal(pin 24) by means of a
voltage follower. The reference voltage can also be drawn from the REF-OUT terminal for external use, up to a
load current of 50 µA.

(11) VSIMOUT Chargepump

The VSIMOUT charge pump uses the voltage from the battery and generates 5.0 V (typ.) v oltage at the VSIMOUT
terminal (pin 29) when an “H” level signal is input at the SIMPROG terminal (pin 27) , or 3.0 V (typ.) voltage
when an “L” level signal input at the SIMPROG ter minal. This voltage can also be drawn from the VSIMOUT
terminal for external use, up to a load current of 10 mA.

(12) GSM/SIM Logic Translation µP Interface

When a signal is input from the microprocessor to the RESET-IN terminal(pin 33) and CLK-IN terminal (pin 34),
a level-shifted voltage is output from the RST terminal (pin 36) and CLK terminal (pin 37) to the SIM card. The
µP-IO terminal (pin 35) and SIM-IO terminal (pin 38) are input/output pins and carr y signals between the
microprocessor and SIM card.

(13) SIM Interface 5 V (SIMPROG = “H”)

When an “H” level signal is input to the SIMPROG ter minal (pin 27), 5.0 V (typ.) voltage is generated from the
VSIMOUT terminal (pin 29) as a power supply for the SIM card.

(14) SIM Interface 3 V (SIMPROG = “L”)

When an “L” level signal is input to the SIMPROG ter minal (pin 27), 3.0 V (typ.) voltage is generated from the
VSIMOUT terminal (pin 29) as a power supply for the SIM card.

SETTING THE XPOWERGOOD TIME

■■■■

When the OUT1 terminal (pin 12,13) voltage exceeds 2.0 V (typ.), the capacitor (CDELAYCAP) connected to the
DELAYCAP terminal (pin 18) starts charging, the XPOWERGOOD terminal (pin 17) voltage rises. The XPOW­ERGOOD terminal voltage rising time (XPOWERGOOD time) can be set by a capacitor connected to the
DELAYCAP terminal.

XPOWERGOOD time : T

24

XPG (s) := 0.8 × CDELAYCAP (µF)

OPERATION TIMING CHART

■■■■

Input

VBAT1 to VBAT4,
VCC-VSIM

CONT1

CONT6

CONT5

CONT2

CONT3

SW1-ON

SW2-ON (SW3-ON)

MB3891

Output

VSIM-ON

SIMPROG

REF-OUT

OUT6

OUT1

XPOWERGOOD

OUT5

OUT2

OUT3 (OUT4)

SW1-OUTPUT

SW2-OUTPUT
(SW3-OUTPUT)

VSIMOUT

2.0 V

delay

VSIMOUT = 3 V

VSIMOUT = 5 V

(1) (2) (3) (4) (5) (6) (7) (8) (9) (10) (11) (12) (13) (14) (15) (16) (17)

(1) : Battery controlled (5) : OUT1 hold
(2) : BACKUP UVLO ON (6) to (12) : µP controlled
(3) : phone turned on (14) : Main UVLO off
(4) : XPOWERGOOD on (16) : BACKUP UVLO off

25

MB3891

APPLICATION EXAMPLE

■■■■

µP

KEYPAD

C8

0.1 µF

R1

200 kΩ

R2

200 kΩ

R3

200 kΩ

R4

200 kΩ

R5

200 kΩ

14

CONT1

CONT6

15

CONT2

16

SW1-ON

53

54

SW2-ON
SW3-ON

55

56

CONT3

CONT5

57

CONT4

44

VREF

22

VFIL

23

REF-OUT

24

26

VSIM-ON

27

SIMPROG

33

RESET-IN

34

CLK-IN

35

µP-IO

20

VBAT2

C12
1 µF

8 9 10 11

VBAT1

XPOWERGOOD

DELAYCAP

SW2-INPUT

SW2-OUTPUT

SW3-INPUT

SW3-OUTPUT

SW1-INPUT

OUT1

GND1

OUT2

VBAT3

OUT3

GND3

12
13

17

18

19

52

51

48

47

60
61
62

46

C11
1 µF

C1
1 µF

C2

0.033 µF

6
7

3
4

5

C3
1 µF

C13
1 µF

C4
1 µF

26

SIM

C9

10 µF

C10

0.1 µF

VCC-VSIM

25

OSC

28

29

VSIMOUT

30

VCAP+
VCAP−

31

36

RST
CLK

37
38

SIM-IO

32

GND-VSIM

SW1-OUTPUT

OUT5

GND5

VBAT4

OUT4

GND4

V-BACKUP

45

58

59

42
43

40
41

39

21

C5
1 µF

C14
1 µF

C6
1 µF

C7
1 µF

N.C.
Pin : 1, 2, 49, 50, 63, 64

MB3891

USAGE PRECAUTIONS

■■■■

• Printed circuit board ground lines should be set up with consideration for common impedance.

•Take appropriate static electricity measures.

• Containers for semiconductor materials should hav e anti-static protection or be made of conductive material.

• After mounting, printed circuit boards should be stored and shipped in conductive bags or Containers.

• Work platforms, tools, and instruments should be properly grounded.

• Working personal should be grounded with resistance of 250 kΩ to 1 MΩ between body and ground.

• Do not apply negative voltages

The use of negative voltages belo w -0.3V may create parasitic transistors on LSI lines, Which can cause abnormal
operation.

ORDERING INFORMATION

■■■■

Part number Package Remarks

MB3891PFV

64-pin Plastic LQFP

(FPT-64P-M03)

27

MB3891

PACKAGE DIMENSION

■■■■

64-pin plastic LQFP

(FPT-64P-M03)

12.00±0.20(.472±.008)SQ

10.00±0.10(.394±.004)SQ

48

49

64

LEAD No.

0.50±0.08

(.020±.003)

INDEX

33

161

+0.08
–0.03

0.18

+.003

.007 –.001

Note : Pins width and pins thickness include plating thickness.

32

0.08(.003)

Details of "A" part

+0.20

1.50

–0.10

(Mounting height)

+.008

.059

17

0.08(.003)

"A"

M

0.145±0.055
(.006±.002)

–.004

0~8°

0.50±0.20

(.020±.008)

0.45/0.75

(.018/.030)

0.10±0.10

(.004±.004)

(Stand off)

0.25(.010)

C

1998 FUJITSU LIMITED F64009S-3C-6

Dimensions in mm (inches) .

MB3891

FUJITSU LIMITED

All Rights Reserved.

The contents of this document are subject to change without notice.
Customers are advised to consult with FUJITSU sales
representatives before ordering.

The information and circuit diagrams in this document are
presented as examples of semiconductor device applications, and
are not intended to be incorporated in devices for actual use. Also,
FUJITSU is unable to assume responsibility for infringement of
any patent rights or other rights of third parties arising from the use
of this information or circuit diagrams.

The products described in this document are designed, developed
and manufactured as contemplated for general use, including
without limitation, ordinary industrial use, general office use,
personal use, and household use, but are not designed, developed
and manufactured as contemplated (1) for use accompanying fatal
risks or dangers that, unless extremely high safety is secured, could
have a serious effect to the public, and could lead directly to death,
personal injury, severe physical damage or other loss (i.e., nuclear
reaction control in nuclear facility, aircraft flight control, air traffic
control, mass transport control, medical life support system, missile
launch control in weapon system), or (2) for use requiring
extremely high reliability (i.e., submersible repeater and artificial
satellite).
Please note that Fujitsu will not be liable against you and/or any
third party for any claims or damages arising in connection with
above-mentioned uses of the products.

Any semiconductor devices have an inherent chance of failure. You
must protect against injury, damage or loss from such failures by
incorporating safety design measures into your facility and
equipment such as redundancy, fire protection, and prevention of
over-current levels and other abnormal operating conditions.

If any products described in this document represent goods or
technologies subject to certain restrictions on export under the
Foreign Exchange and Foreign Trade Law of Japan, the prior
authorization by Japanese government will be required for export
of those products from Japan.

F0007

FUJITSU LIMITED Printed in Japan

