Fujitsu MB3891 User Manual

FUJITSU SEMICONDUCTOR

DATA SHEET

DS04-27801-1E

ASSP For Po wer Management Applications (Mobile Phones)

Power Management IC
fo r GSM Mobile Phone

MB3891

DESCRIPTION

■■■■

MB3891 is intended to be used in future GSM-phones, Dual Band phones and Dual Mode phones. It contains all
the necessary functions to support all Digital, Analog and RF bloc ks in these phones. A Charge-pump including
a Logic Level Translation circuit is built in to support SIM-card (SmartCard) of both 3 and 5 Volt technology. The
circuit contains a charger for a rechargeable Lithium coin cell of a Real Time Clock.

A complex control circuit is built in to generate main reset and to turn on and off the different LDO’s.

FEATURES

■■■■

• Supply voltage range : 3 V to 5.5 V

• Low power consumption current during standby : 400 µA (MAX)

• 6-channel low-saturation voltage type series regulator
: 2.1 V/2 channels, 2.8 V/3 channels, 2.5 V/2.8 V switch

• Error prevention function during Low voltage

• Power on reset function

• 3 V/5 V SW for SIM-Card

• SIM interface function

• Backflow prevention function for Battery-Backup

• Temperature prevention function

PACKAGE

■■■■

64-pin plastic LQFP

(FPT-64P-M03)

MB3891

PIN ASSIGNMENT

■■■■

48 : SW3-INPUT

47 : SW3-OUTPUT

46 : SW1-INPUT

(TOP VIEW)

45 : SW1-OUTPUT

44 : CONT4

43 : VBAT4

42 : VBAT4

41 : OUT4

40 : OUT4

39 : GND4

38 : SIM-IO

37 : CLK

36 : RST

35 : µP-IO

34 : CLK-IN

33 : RESET-IN

N.C. : 49
N.C. : 50

SW2-OUTPUT : 51

SW2-INPUT : 52

SW1-ON : 53
SW2-ON : 54
SW3-ON : 55

CONT3 : 56
CONT5 : 57

OUT5 : 58

GND5 : 59
VBAT3 : 60
VBAT3 : 61
VBAT3 : 62

N.C. : 63
N.C. : 64

32 : GND-VSIM
31 : VCAP−
30 : VCAP+
29 : VSIMOUT
28 : OSC
27 : SIMPROG
26 : VSIM-ON
25 : VCC-VSIM
24 : REF-OUT
23 : VFIL
22 : VREF
21 : V-BACKUP
20 : VBAT2
19 : GND1
18 : DELAYCAP
17 : XPOWERGOOD

N.C. : 1

N.C. : 2

OUT3 : 3

OUT3 : 4

OUT2 : 6

GND3 : 5

OUT2 : 7

VBAT1 : 8

VBAT1 : 9

VBAT1 : 10

VBAT1 : 11

OUT1 : 12

OUT1 : 13

CONT1 : 14

CONT6 : 15

CONT2 : 16

(FPT-64P-M03)

2

MB3891

PIN DESCRIPTION

■■■■

Pin No. Symbol I/O Descriptions

1, 2 N.C.  Non connection.
3, 4 OUT3 O LDO3 output pin.

5GND3 LDO3 ground pin.

6, 7 OUT2 O LDO2 output pin.

8, 9, 10, 11 VBAT1  Battery voltage input pin for LDO1 and LDO2.

12, 13 OUT1 O LDO1 output pin.

14 CONT1 I Power on input from keypad (Active low, Pulled up to VBAT2).
15 CONT6 I “CONT6” input from digital system µP (Active high).
16 CONT2 I External accessory supply voltage Enable (Active high).
17 XPOWERGOOD O Generates the main reset. (Active low, when OUT1 is out of regulation).
18 DELAYCAP  Timing capacitor for XPOWERGOOD delay.
19 GND1  LDO1, LDO2, V-BACKUP, Reference and System ground pin.

20 VBAT2 
21 V-BACKUP O Supply voltage for Charger for rechargeable Lithium coin cell.

22 VREF O Supply voltage for Reference.
23 VFIL O Reference voltage Filter.
24 REF-OUT O Reference output voltage (Present when BACKUP UVLO is high).
25 VCC-VSIM  Input voltage for charge pump. (Supplied by VBAT1).
26 VSIM-ON I VSIM supply Enable (Active high).
27 SIMPROG I VSIM programming: Low = 3 V SIM, High = 5 V SIM.
28 OSC  Oscillator output pin.
29 VSIMOUT O Supply voltage for 3 or 5 V SIM-Card (SmartCard).
30 VCAP+Positive side of boost capacitor.
31 VCAP−Negative side of boost capacitor.
32 GND-VSIM  3 or 5 V SIM-Card (SmartCard) ground pin.
33 RESET-IN I Non level shifted SIM reset (µP side).
34 CLK-IN I Non level shifted clock (µP side).
35 µP-IO I/O Non level shifted bi-directional data input/output (µP side).
36 RST O Level shifted SIM reset (SmartCard side).
37 CLK O Level shifted SIM clock (SmartCard side).

Battery voltage input pin for both UVLO’s, Reference and V-BACKUP
LDO.

38 SIM-IO I/O Level shifted bi-directional SIM data input/output (SmartCard side).
39 GND4  LDO4 ground pin.

40, 41 OUT4 O LDO4 output pin.

(Continued)

3

MB3891

(Continued)

Pin No. Symbol I/O Descriptions

42, 43 VBAT4  Supply voltage for LDO4.

44 CONT4 I OUT4 output voltage selection (“L”=2.8 V,“H”=2.5 V).
45 SW1-OUTPUT O Output of general purpose switch number 1 (Drain).
46 SW1-INPUT I Input of general purpose switch number 1 (Source).
47 SW3-OUTPUT O Output of general purpose switch number 3 (Drain).
48 SW3-INPUT I Input of general purpose switch number 3 (Source).

49, 50 N.C.  Non connection.

51 SW2-OUTPUT O Output of general purpose switch number 2 (Drain).
52 SW2-INPUT I Input of general purpose switch number 2 (Source).
53 SW1-ON I General purpose switch number 1 Enable (Active high).
54 SW2-ON I General purpose switch number 2 Enable (Active high).
55 SW3-ON I General purpose switch number 3 Enable (Active high).
56 CONT3 I OUT3 and OUT4 supply voltage Enable (Active high).
57 CONT5 I OUT5 supply voltage Enable (Active high).
58 OUT5 O Output terminal of LDO5.
59 GND5  LDO5 ground pin.

60, 61, 62 VBAT3  Supply voltage for LDO and LDO5.

63, 64 N.C.  Non connection.

4

BLOCK DIAGRAM

■■■■

VBAT2 VBAT1

20

8 9 10 11

MB3891

CONT1

CONT6

CONT2

SW1-ON

SW2-ON

SW3-ON

CONT3

CONT5

CONT4

14

15

16

53

54

55

56

57

44

Main

UVLO

Over

Temp

Protection

SW1

SW2

SW3

LDO1

ON

LDO2

ON

LDO3

ON

OUT

OUT

OUT

POR

12

OUT1

13

XPOWERGOOD

17

DELAYCAP

18

GND1

19

6

OUT2

7

SW1-INPUT

46

SW1-OUTPUT

45
52

SW2-INPUT

51

SW2-OUTPUT

48

SW3-INPUT

47

SW3-OUTPUT

60
61

VBAT3

62

3

OUT3

4

VREF

VFIL

REF-OUT

RESET-IN

CLK-IN

µP-IO

RST
CLK

SIM-IO

VCC-VSIM

VSIM-ON

SIMPROG

OSC

22

23

24

33
34
35

36
37
38

25
26

27
28

VREF

GSM/SIM

Logic
Level

Translation

32

GND-VSIM

VREF-AMP

+

−

VSIMOUT

Charge-pump

29

VSIMOUT

BACKUP

UVLO

LDO4

OUT

ON
CONT4

LDO5

OUT

ON

LDO6

OUT

ON

N.C.
Pin : 1, 2, 49, 50, 63, 64

5

GND3

42

VBAT4

43
40

OUT4

41

GND4

39

58

OUT5

59

GND5

V-BACKUP

21

30

VCAP+

31

VCAP−

5

MB3891

ABSOLUTE MAXIMUM RATINGS

■■■■

Parameter Symbol Conditions

Unit

Min. Max.

VBAT −0.3 7 V

Power supply voltage

VCC-VSIM −0.3 7 V

Rating

I

O OUT1 pin  120 mA

IO OUT2 pin  50 mA

LDO regulator

I

O OUT3 pin  100 mA

I

O OUT4 pin  100 mA

IO OUT5 pin  50 mA
VSIMOUT chargepump I
Power dissipation P

O VSIMOUT pin  10 mA

D Ta ≤ +25 °C  800* mW

Storage temperature Tstg −55 +125 °C

* : The packages are mounted on the dual-sided epoxy board(10 cm × 10 cm)
WARNING: Semiconductor devices can be permanently damaged by application of stress (voltage, current,

temperature, etc.) in excess of absolute maximum ratings. Do not exceed these ratings.

RECOMMENDED OPERATING CONDITIONS

■■■■

Value

Parameter Symbol Conditions

Min. Typ. Max.

Unit

Power supply voltage

VBAT  3.0 3.6 5.5 V

VCC-VSIM  3.0 3.6 5.5 V
LDO capacitor guarantee value C
REF-OUT capacitor guarantee

value
VSIMOUT capacitor guarantee

value

O OUT1 to OUT5, V-BACKUP pin 0.8 1.0 µF

CO REF-OUT pin  0.027 µF

C

O VSIMOUT pin  10 µF

Operating ambient temperature Ta −20 +25 +85 °C

WARNING: The recommended operating conditions are required in order to ensure the normal operation of the

semiconductor device. All of the device’s electrical characteristics are warranted when the device is
operated within these ranges.

Always use semiconductor devices within their recommended operating condition ranges. Operation
outside these ranges may adversely affect reliability and could result in device failure.

No warranty is made with respect to uses, operating conditions, or combinations not represented on
the data sheet. Users considering application outside the listed conditions are advised to contact their
FUJITSU representatives beforehand.

6

ELECTRICAL CHARACTERISTICS

■■■■

Parameter Symbol Pin No. Conditions

MB3891

(Ta = +25 °C, VBAT1 to VBAT4 = VCC-VSIM = 3.6 V)

Value

Unit

Min. Typ. Max.

General

Shutdown supply
current

Standby supply
current

Operating ground
current

UVLO threshold
voltage

BACKUP UVLO
threshold voltage

I

BAT1

I

BAT2

I

BAT3

I

GND

8, 9, 10, 11,

20, 42, 43,

60, 61, 62

8, 9, 10, 11,

20, 42, 43,

60, 61, 62

8, 9, 10, 11,

20, 42, 43,

60, 61, 62

4, 5, 19,

32, 59

UVLO = “L”,
BACKUP UVLO = “L”

UVLO = “L”,
BACKUP UVLO = “H”

All circuit’s = On
(No load)

All circuit’s -VSIM =
On Max. load on all
regulators

80 µA

160 µA

400 µA

10 mA

8, 9, 10, 11,

THH

V

20, 42, 43,

OUT1 = ON 2.980 3.080 3.180 V

60, 61, 62

8, 9, 10, 11,

V

THL

20, 42, 43,

OUT1 = OFF 2.780 2.880 2.980 V

60, 61, 62

8, 9, 10, 11,

V

THH

20, 42, 43,

V-BACKUP = ON 2.980 3.080 3.180 V

60, 61, 62

8, 9, 10, 11,

V

THL

20, 42, 43,

V-BACKUP = OFF 2.580 2.680 2.780 V

60, 61, 62

V

IH 16, 56, 57 

0.7 ×

OUT1

VIL 16, 56, 57  0 

 OUT1 V

0.3 ×

OUT1

V

Input voltage

Pull-up resistor

Pull-down resistor RPD 15, 53, 54, 55 200*  kΩ

* : Standard design value

V

IH 14, 15, 44 

V

IL 14, 15, 44  0 

VIH 26, 27 

V

IL 26, 27  0 

R

PU 17 15*  kΩ

R

PU 14, 57 200*  kΩ

0.7 ×

VBAT

0.7 ×

VCC-VSIM

 VBAT V

0.3 ×

VBAT

VCC-VSIM



0.3 ×

VCC-VSIM

(Continued)

V

V

V

7

MB3891

Parameter Symbol

Output voltage V
Line regulation Line 12, 13 3.1 V < VBAT1 < 5.5 V 10 mV
Load reguration Load 12, 13 −50 µA > OUT1 > −120 mA 30 mV

(Ta = +25 °C, VBAT1 to VBAT4 = VCC-VSIM = 3.6 V)

Pin
No.

O 12, 13 −50 µA > OUT1 > −120 mA 2.000 2.100 2.200 V

Conditions

Value

Unit

Min. Typ. Max.

LDO1

(OUT1)

XPOWER-

GOOD

(RESET)

LDO2

(OUT2)

Ripple rejection
∆VBAT1/∆OUT1

Dropout voltage V
GND current at low load I
GND current at max. load I

Output noise volt. (RMS) VNOVL 12, 13

R.R 12, 13 f = 217 Hz 45 dB

DO 12, 13 OUT1 = −120 mA 500 mV
GND 19 OUT1 > −1 mA 30 µA
GND 19 OUT1 = −120 mA  2mA

f = 10 Hz to 1 MHz,
OUT1 = 1 µF

V

OH 17 

500 µV

0.8 ×

OUT1

 OUT1 V

Output voltage

V

OL 17  0 

0.1 ×

OUT1

V

Hold time TXPG 17 DELAYCAP = 0.033 µF102540ms
Output voltage V

O 6, 7 −50 µA > OUT2 > −50 mA 2.700 2.800 2.900 V

Line regulation Line 6, 7 3.1 V < VBAT1 < 5.5 V 10 mV
Load regulation Load 6, 7 −50 µA > OUT2 > −50 mA 30 mV
Ripple rejection

∆VBAT1/∆OUT2
Dropout voltage V
GND current at low load I

R.R 6, 7 f = 217 Hz 45 dB

DO 6, 7 OUT2 = −50 mA 250 mV
GND 19 OUT2 > −1 mA 30 µA

GND current at max. load IGND 19 OUT2 = −50 mA 1mA

8

General
purpose

switches

Output noise volt. (RMS) V

Input/Output resistance

NOVL 6, 7

R

SW1 45, 46

RSW2 51, 52

R

SW3 47, 48

f = 10 Hz to 1 MHz,
OUT2 = 1 µF

SW1-INPUT = 2.8 V
(Gate/Source = 2.8 V)

SW2-INPUT = 2.8 V
(Gate/Source = 2.8 V)

SW3-INPUT = 2.8 V
(Gate/Source = 2.8 V)

350 µV

4.0 Ω

7.0 Ω

7.0 Ω

(Continued)

MB3891

(Ta = +25 °C, VBAT1 to VBAT4 = VCC-VSIM = 3.6 V)

Parameter Symbol Pin No. Conditions

Output voltage V

O 3, 4 −50 µA > OUT3 > −100 mA 2.700 2.800 2.900 V

Line regulation Line 3, 4 3.1 V < VBAT3 < 5.5 V 10 mV
Load regulation Load 3, 4 −50 µA > OUT3 > −100 mA 30 mV

Value

Unit

Min. Typ. Max.

LDO3

(OUT3)

LDO4

(OUT4)

Ripple rejection
∆VBAT3/∆OUT3

Dropout voltage V
GND current at low load I
GND current at max.

load
Output noise volt. (RMS) V

R.R 3, 4 f = 217 Hz 45 dB

DO 3, 4 OUT3 = −100 mA 250 mV

GND 5OUT3 > −1 mA 30 µA

I

GND 5OUT3 = −100 mA  2mA

NOVL 3, 4

V

O 40, 41

f = 10 Hz to 1 MHz,
OUT3 = 1 µF

−50 µA > OUT4 > −100 mA,
CONT4 = “L”

350 µV

2.700 2.800 2.900 V

Output voltage

VO 40, 41

−50 µA > OUT4 > −100 mA,
CONT4 = “H”

2.400 2.500 2.600 V

Line regulation Line 40, 41 3.1 V < VBAT4 < 5.5 V 10 mV
Load regulation Load 40, 41 −50 µA > OUT4 > −100 mA 30 mV
Ripple rejection

∆VBAT4 - OUT4/∆OUT4
Dropout voltage V
GND current at low load I
GND current at max.

load
Output noise volt. (RMS) VNOVL 40, 41

R.R 40, 41 f = 217 Hz 45 dB

DO 40, 41 OUT4 = −100 mA 250 mV

GND 39 OUT4 > −1 mA 30 µA

I

GND 39 OUT4 = −100 mA  2mA

f = 10 Hz to 1 MHz,
OUT4 = 1 µF

500 µV

LDO5

(OUT5)

Output voltage V

O 58 −50 µA > OUT5 > −50 mA 2.700 2.800 2.900 V

Line regulation Line 58 3.1 V < VBAT3 < 5.5 V 10 mV
Load regulation Load 58 −50 µA > OUT5 > −50 mA 30 mV
Ripple rejection

∆VBAT3/∆OUT5
Dropout voltage V
GND current at low load I
GND current at max.

load
Output noise volt. (RMS) V

R.R 58 f = 217 Hz 45 dB

DO 58 OUT5 = −50 mA 250 mV

GND 59 OUT5 > −500 µA 20 µA

IGND 59 OUT5 = −50 mA  1mA

NOVL 58

f = 10 Hz to 1 MHz,
OUT5 = 1 µF

350 µV

(Continued)

9