Fairchild Semiconductor TIP146, TIP147, TIP145 Datasheet
TIP145/146/147
Monolithic Construction With Built In BaseEmitter Shunt Resistors
• High DC Current Gain : h
• Industrial Use
• Complement to TIP140/141/142
PNP Epitaxial Silicon Darlington Transistor
= 1000 @ V
FE
= -4V, IC = -5A (Min.)
CE
1
TO-3P
1.Base 2.Collector 3.Emitter
TIP145/146/147
Absolute Maximum Ratings
Symbol Parameter Value Units
V
CBO
Collector-Base Voltage : TIP145
Collector-Emitter Voltage : TIP145
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
T
J
T
STG
Emitter-Base Voltage - 5 V
Collector Current (DC) - 10 A
Collector Current (Pulse) - 15 A
Base Current (DC) - 0.5 A
Collector Dissipation (TC=25°C) 125 W
Junction Temperature 150 °C
Storage Temperature - 65 ~ 150 °C
Electrical Characteristics
TC=25°C unless otherwise noted
- 60
: TIP146
: TIP147
- 80
- 100
- 60
: TIP146
: TIP147
- 80
- 100
TC=25°C unless otherwise noted
Equivalent Circuit
C
V
V
V
B
V
V
V
R18kΩ≅
R20.12kΩ≅
R1
R2
E
Symbol Parameter Test Condition Min. Typ. Max. Units
V
(sus) Collector-Emitter Sustaining Voltage
CEO
: TIP145
: TIP146
: TIP147
ICEO
Collector Cut-off Curren
: TIP145
: TIP146
: TIP147
I
CBO
Collector Cut-off Current
: TIP145
: TIP146
: TIP147
IEBO
hFE
(sat) Collector-Emitter Saturation Voltage IC = - 5A, IB = - 10mA
V
CE
V
(sat) Base-Emitter Saturation Voltage IC = - 10A, IB = - 40mA - 3.5 V
BE
(on) Base-Emitter ON Voltage V
V
BE
t
D
t
R
t
STG
t
F
©2000 Fairchild Semiconductor International Rev. A, February 2000
Emitter Cut-off Current V
DC Current Gain V
Delay Time V
Rise Time 0.55 µs
Storage Time 2.5 µs
Fall Time 2.5 µs
= - 30mA, IB = 0 - 60
I
C
- 80
- 100
= - 30V, IB = 0
V
CE
= - 40V, IB = 0
V
CE
V
= - 50V, IB = 0
CE
= - 60V, IE = 0
V
CB
= - 80V, IE = 0
V
CB
V
= - 100V, IE = 0
CB
= - 5V, IC = 0 - 2 mA
BE
= - 4V,IC = - 5A
CE
= - 4V, IC = - 10A
V
CE
I
= - 10A, IB = - 40mA
C
= - 4V, IC = - 10A - 3 V
CE
= - 30V, IC = - 5A
CC
= -20mA, IB2 = 20mA
I
B1
= 6Ω
R
L
1000
500
0.15 µs
- 2
- 2
- 2
- 1
- 1
- 1
- 2
- 3
V
V
V
mA
mA
mA
mA
mA
mA
V
V
Typical Characteristics
TIP145/146/147
IB = -1800µA
IB = -1600µA
IB = -1400µA
IB = -1200µA
IB = -1000µA
IB = -800µA
IB = -600µA
IB = -400µA
-10
-9
-8
-7
IB = -2000µA
-6
-5
-4
-3
[A], COLLECTOR CURRENT
-2
C
I
-1
-0
-0 -1 -2 -3 -4 -5
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic Figure 2. DC current Gain
-10
VBE(sat)
-1
-0.1
(sat)[V], SATURATION VOLTAGE
CE
VCE(sat)
IC=-500I
100000
VCE = -4V
10000
1000
, DC CURRENT GAIN
FE
h
100
-0.1 -1 -10 -100
IC[A], COLLECTOR CURRENT
B
-1000
-100
[pF], CAPACITANC E
ob
C
f=0.1MHz
(sat), V
BE
V
-0.01
-0.1 -1 -10 -100
IC[A], COLLECTOR CURRENT
Figure 3. Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
-100
-10
-1
[A], COLLECTOR CURRENT
C
I
-0.1
-1 -10 -100 -1000
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 5. Safe Operating Area Figure 6. Power Derating
©2000 Fairchild Semiconductor International
DC
TIP140
TIP141
TIP142
-10
-1 -10 -100 -1000
VCB[V], COLLECTOR-BASE VOLTAGE
Figure 4. Collector Output Capacitance
150
125
100
75
50
[W], POWER DISSIPATION
C
25
P
0
0 255075100125150175
TC[oC], CASE TEMPERATURE
Rev. A, February 2000
Loading...