Fairchild Semiconductor TIP145F, TIP147F Datasheet
TIP145F/146F/147F
Monolithic Construction With Built In BaseEmitter Shunt Resistors
• High DC Current Gain : h
• Industrial Use
• Complement to TIP140F/141F/142F
PNP Epitaxial Darlington Transistor
= 1000 @ V
FE
= -4V, IC = -5A (Min.)
CE
1
TO-3PF
1.Base 2.Collector 3.Emitter
TIP145F/146F/147F
Absolute Maximum Ratings
Symbol Parameter Value Units
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
T
J
T
STG
Collector-Emitter Voltage : TIP145F
Collector-Emitter Voltage : TIP145F
Emitter-Base Voltage - 5 V
Collector Current (DC) - 10 A
Collector Current (Pulse) - 15 A
Base Current (DC) - 0.5 A
Collector Dissipation (TC=25°C) 60 W
Junction Temperature 150 °C
Storage T emperature - 65 ~ 150 °C
Electrical Characteristics
TC=25°C unless otherwise noted
- 60
: TIP146F
: TIP147F
- 80
- 100
- 60
: TIP146F
: TIP147F
- 80
- 100
TC=25°C unless otherwise noted
Equivalent Circuit
C
V
V
V
B
V
V
V
R
18
R
20.12
R1
k
R2
Ω≅
Ω≅
k
E
Symbol Parameter Test Condition Min. Typ. Max. Units
V
(sus) Collector-Emitter Sustaining Voltage
CEO
: TIP145F
: TIP146F
: TIP147F
ICEO
Collector Cut-off Current
: TIP145F
: TIP146F
: TIP147F
I
CBO
Collector Cut-off Current
: TIP145F
: TIP146F
: TIP147F
IEBO
hFE
(sat) Collector-Emitter Saturation Voltage IC = - 5A, IB = - 10mA
V
CE
V
(sat) Base-Emitter Saturation Voltage IC = - 10A, IB = - 40mA - 3.5 V
BE
(on) Base-Emitter On Voltage V
V
BE
t
D
t
R
t
STG
t
f
©2002 Fairchild Semiconductor Corporation Rev. B, December 2002
Emitter Cut-off Current V
DC Current Gain V
Delay Time V
Rise Time 0.55 µs
Storage Time 2.5 µs
Fall Time 2.5 µs
= - 30mA, IB = 0 - 60
I
C
- 80
- 100
= - 30V, IB = 0
V
CE
= - 40V, IB = 0
V
CE
V
= - 50V, IB = 0
CE
= - 60V, IE = 0
V
CB
= - 80V, IE = 0
V
CB
V
= - 100V, IE = 0
CB
= - 5V, IC = 0 - 2 mA
BE
= - 4V, IC = - 5A
CE
= - 4V, IC = - 10A
V
CE
I
= - 10A, IB = - 40mA
C
= - 4V, IC = - 10A - 3 V
CE
= - 30V, IC = - 5A
CC
= -20mA, IB2 = 20mA
I
B1
= 6Ω
R
L
1000
500
0.15 µs
- 2
- 2
- 2
- 1
- 1
- 1
- 2
- 3
V
V
V
mA
mA
mA
mA
mA
mA
V
V
Typical Characteristics
TIP145F/146F/147F
IB = -1800µA
IB = -1600µA
IB = -1400µA
IB = -1200µA
IB = -1000µA
IB = -800µA
IB = -600µA
IB = -400µA
100000
10000
1000
, DC CURRENT GAIN
FE
h
100
-0.1 -1 -1 0 -100
IC[A], COLLECTOR CURREN T
-10
-9
-8
-7
IB = -2000µA
-6
-5
-4
-3
[A], COLLECTOR CURRENT
C
-2
I
-1
-0
-0 -1 -2 -3 -4 -5
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic Figure 2. DC current Gain
-10
VBE(sat)
-1
VCE(sat)
IC=-500I
B
-0.1
(sat)[V], SATURATION VOLTAGE
CE
[pF], CAPACITANCE
C
-1000
-100
ob
VCE = -4V
f=0.1MHz
(sat), V
BE
V
-0.01
-0.1 -1 -10 -100
IC[A], COLLECTOR CURRE NT
Figure 3. Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
DC
TIP145F
TIP146F
TIP147F
-100
-10
-1
[A], COLLECTOR CU RRENT
C
I
-0.1
-1 -10 -100 -1000
VCE[V], COLLECTOR-EMITTER V O LTAG E
Figure 5. Safe Operating Area Figure 6. Power Derating
-10
-1 -10 -100 -1000
VCB[V], COLLECTOR-BASE VOLTAG E
Figure 4. Collector Output Capacitance
80
70
60
50
40
30
20
[W], POWER DIS S IPA TIO N
C
P
10
0
0 255075100125150175
TC[oC], CASE TEMPERATURE
©2002 Fairchild Semiconductor Corporation
Rev. B, December 2002
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