Fairchild Semiconductor TIP140, TIP142, TIP141 Datasheet
TIP140/141/142
Monolithic Construction With Built In BaseEmitter Shunt Resistors
• High DC Current Gain : h
• Industrial Use
• Complement to TIP145/146/147
NPN Epitaxial Silicon Darlington Transistor
= 1000 @ V
FE
= 4V, IC = 5A (Min.)
CE
1
TO-3P
1.Base 2.Collector 3.Emitter
TIP140/141/142
Absolute Maximum Ratings
Symbol Parameter Value Units
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
T
J
T
STG
Collector-Base Voltage : TIP140
Collector-Emitter Voltage : TIP140
Emitter-Base Voltage 5 V
Collector Current (DC) 10 A
Collector Current (Pulse) 15 A
Base Current (DC) 0.5 A
Collector Dissipation (TC=25°C) 125 W
Junction Temperature 150 °C
Storage T emperature - 65 ~ 150 °C
Electrical Characteristics
TC=25°C unless otherwise noted
60
: TIP141
: TIP142
80
100
60
: TIP141
: TIP142
80
100
TC=25°C unless otherwise noted
Equivalent Circuit
C
V
V
V
V
B
V
V
R18kΩ≅
R20.12kΩ≅
R1
R2
E
Symbol Parameter Test Condition Min. Typ. Max. Units
V
(sus) Collector-Emitter Sustaining Voltage
CEO
: TIP140
I
= 30mA, IB = 0
C
: TIP141
: TIP142
ICEO
I
CBO
IEBO
hFE
V
(sat) Collector-Emitter Saturation Voltage IC = 5A, IB = 10mA
CE
(sat) Base-Emitter Saturation Voltage IC = 10A, IB = 40mA
V
BE
V
(on) Base-Emitter ON Voltage V
BE
t
D
t
R
t
STG
t
F
Collector Cut-off Current
: TIP140
: TIP141
: TIP142
Collector Cut-off Current
: TIP140
: TIP141
: TIP142
Emitter Cut-off Current V
DC Current Gain V
Delay Time V
Rise Time
Storage Time
Fall Time
V
= 30V, IB = 0
CE
= 40V, IB = 0
V
CE
= 50V, IB = 0
V
CE
V
= 60V, IE = 0
CB
= 80V, IE = 0
V
CB
= 100V, IE = 0
V
CB
= 5V, IC = 0
BE
= 4V, IC = 5A
CE
V
= 4V, IC = 10A
CE
= 10A, IB = 40mA
I
C
= 4V, IC = 10A
CE
= 30V, IC = 5A
CC
= 20mA, IB2 = -20mA
I
B1
R
= 6Ω
L
60
80
100
1000
500
2
2
2
1
1
1
2mA
2
3
3.5 V
3V
0.15
0.55
2.5
2.5
V
V
V
mA
mA
mA
mA
mA
mA
V
V
µs
µs
µs
µs
©2000 Fairchild Semiconductor International Rev. A, February 2000
Typical Characteristics
TIP140/141/142
= 1200uA
I
B
= 1000uA
I
B
IB = 800uA
IB = 600uA
IB = 400uA
IB = 200uA
10
IB = 2000uA
9
IB = 1800uA
8
IB = 1600uA
IB = 1400uA
7
6
5
4
3
[A], COLLECTOR CURRENT
2
C
I
1
0
012345
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic Figure 2. DC current Gain
10
1
0.1
(sat)[V], SATURATION VOLTAGE
CE
VBE(sat)
VCE(sat)
IC=500I
100k
VCE = 4V
10k
1k
, DC CURRENT GAIN
100
FE
h
10
0.1 1 10 100
IC[A], COLLECTOR CURRENT
B
1000
100
[pF], CA PACITANCE
ob
C
f=0.1MHz
(sat), V
BE
V
0.01
0.1 1 10 100
IC[A], COLLECTOR CURRENT
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
100
10
1
[A], COLLECTOR CURRENT
C
I
0.1
1 10 100 1000
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 5. Safe Operating Area Figure 6. Power Derating
©2000 Fairchild Semiconductor International
DC
TIP140
TIP141
TIP142
10
1 10 100 1000
VCB[V], COLLECTOR-BASE VOLTAGE
Figure 4. Collector Output Capacitance
150
125
100
75
50
[W], POWER DISSIPATION
C
25
P
0
0 255075100125150175
TC[oC], CASE TEMPERATURE
Rev. A, February 2000
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