Fairchild Semiconductor TIP125, TIP127, TIP126 Datasheet
TIP125/126/127
Medium Power Linear Switching Applications
• Complementary to TIP120/121/122
TIP125/126/127
1
TO-220
1.Base 2.Collector 3.Emitter
PNP Epitaxial Darlington Transistor
Absolute Maximum Ratings
Symbol Parameter Value Units
V
CBO
Collector-Base Voltage : TIP125
Collector-Emitter Voltage : TIP125
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
Emitter-Base Voltage - 5 V
Collector Current (DC) - 5 A
Collector Current (Pulse) - 8 A
Base Current (DC) - 120 mA
Collector Dissipation (Ta=25°C) 2 W
Collector Dissipation (T
T
J
T
STG
Junction Temperature 150 °C
Storage T emperature - 65 ~ 150 °C
Electrical Characteristics
Symbol Parameter Test Condition Min. Max. Units
V
(sus) Collector-Emitter Sustaining Voltage
CEO
ICEO
I
CBO
IEBO
hFE
(sat) * Collector-Emitter Saturation Voltage IC = -3A, IB = -12mA
V
CE
(on) * Base-Emitter ON Voltage V
V
BE
C
ob
* Pulse Test : PW≤300µs, Duty cycle ≤2%
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current V
* DC Current Gain V
Output Capacitance V
TC=25°C unless otherwise noted
- 60
: TIP126
: TIP127
- 80
- 100
- 60
: TIP126
: TIP127
=25°C) 65 W
C
- 80
- 100
TC=25°C unless otherwise noted
: TIP125
: TIP126
= -100mA, IB = 0 -60
I
C
: TIP127
: TIP125
: TIP126
: TIP127
: TIP125
: TIP126
: TIP127
= -30V, IB = 0
V
CE
= -40V, IB = 0
V
CE
V
= -50V, IB = 0
CE
= -60V, IE = 0
V
CB
V
= -80V, IE = 0
CB
= -100V, IE = 0
V
CB
= -5V, IC = 0 -2 mA
BE
= -3V, IC = 0.5A
CE
= -3V, IC = -3A
V
CE
I
=-5A, IB=-20mA
C
= -3V, IC = -3A -2.5 V
CE
= -10V, IE = 0, f = 0.1MHz 300 pF
CB
Equivalent Circuit
V
V
V
V
B
V
V
R
18
R
20.12
R1
k
R2
Ω≅
k
Ω≅
-80
-120
-2
-2
-2
-1
-1
-1
1000
1000
-2
-4
C
E
V
V
V
mA
mA
mA
mA
mA
mA
V
V
©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001
Typical Characteristics
TIP125/126/127
10k
1k
, DC CURRENT GAIN
FE
h
100
-0.1 -1 -10
IC[A], COLLECTOR CURRENT
Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage
1000
100
[pF], CAPACITANCE
ib
[pF] C
ob
C
10
-0.1 -1 -10 -100
VCB[V], COLLECTOR-BASE VOLTAGE
[V], EMITTER-BASE VOLTAGE
V
EB
C
ib
VCE = 4V
f = 0.1MHz
C
ob
-3.5
-3.0
-2.5
-2.0
-1.5
(sat)[V], SATURATION VOLTAGE
CE
-1.0
(sat), V
BE
V
-0.5
-0.1 -1 -10
VBE(sat)
VCE(sat)
IC = 250I
B
IC[A], COLLECTOR CURRENT
Collector-Emitter Saturation Voltage
-10
-1
-0.1
[A], COLLECTOR CURRENT
C
I
-0.01
-1 -10 -100
VCE[V], COLLECTOR-EMITTER VOLTAGE
100us
500us
1ms
5ms
DC
TIP125
TIP126
TIP127
Figure 3. Output and Input Capacitance
vs. Reverse Voltage
90
75
60
45
30
[W], POWER DISSIPATION
C
P
15
0
0 255075100125150175
TC[oC], CASE TEMPERATURE
Figure 5. Power Derating
©2001 Fairchild Semiconductor Corporation
Figure 4. Safe Operating Area
Rev. A1, June 2001
Loading...