Fairchild Semiconductor TIP121, TIP120, TIP122 Datasheet
TIP120/121/122
Medium Power Linear Switching Applications
• Complementary to TIP125/126/127
TIP120/121/122
1
TO-220
1.Base 2.Collector 3.Emitter
NPN Epitaxial Darlington Transistor
Absolute Maximum Ratings
TC=25°C unless otherwise noted
Symbol Parameter Value Units
V
V
V
I
I
I
P
T
T
CBO
CEO
EBO
C
CP
B
C
J
STG
Collector-Base Voltage : TIP120
Collector-Emitter Voltage : TIP120
Emitter-Base Voltage 5 V
Collector Current (DC) 5 A
Collector Current (Pulse) 8 A
Base Current (DC) 120 mA
Collector Dissipation (Ta=25°C) 2 W
Collector Dissipation (T
C
Junction Temperature 150 °C
Storage T emperature - 65 ~ 150 °C
Electrical Characteristics
: TIP121
: TIP122
: TIP121
: TIP122
=25°C) 65 W
TC=25°C unless otherwise noted
60
80
100
60
80
100
V
V
V
V
V
V
Symbol Parameter Test Condition Min. Max. Units
V
(sus) Collector-Emitter Sustaining Voltage
CEO
: TIP120
: TIP121
= 100mA, IB = 0 60
I
C
: TIP122
ICEO
I
CBO
IEBO
hFE
(sat) * Collector-Emitter Saturation Voltage IC = 3A, IB = 12mA
V
CE
(on) * Base-Emitter ON Voltage V
V
BE
C
ob
* Pulse Test : PW≤300µs, Duty cycle ≤2%
Collector Cut-off Current
: TIP120
: TIP121
: TIP122
Collector Cut-off Current
: TIP120
: TIP121
: TIP122
Emitter Cut-off Current V
* DC Current Gain V
Output Capacitance V
= 30V, IB = 0
V
CE
= 40V, IB = 0
V
CE
V
= 50V, IB = 0
CE
= 60V, IE = 0
V
CB
V
= 80V, IE = 0
CB
= 100V, IE = 0
V
CB
= 5V, IC = 0 2 mA
BE
= 3V,IC = 0.5A
CE
= 3V, IC = 3A
V
CE
I
= 5A, IB = 20mA
C
= 3V, IC = 3A 2.5 V
CE
= 10V, IE = 0, f = 0.1MHz 200 pF
CB
Equivalent Circuit
B
R
18
R
20.12
R1
k
Ω≅
80
100
1000
1000
R2
k
Ω≅
0.5
0.5
0.5
0.2
0.2
0.2
2.0
4.0
C
E
V
V
V
mA
mA
mA
mA
mA
mA
V
V
©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001
Typical characteristics
TIP120/121/122
10000
1000
, DC CURRENT GAIN
FE
h
100
0.1 1 10
IC[A], COLLECTOR CURRENT
Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage
1000
100
[pF], CA PACITANCE
ib
[pF] C
ob
C
10
0.1 1 10 100
VCB[V], COLLECTOR-BASE VOLTAGE
[V], EMITTER-BASE VOLTAGE
V
EB
C
ib
VCE = 4V
f=0.1MHz
C
3.5
3.0
2.5
2.0
1.5
(sat)[V], SATURATION VOLTAGE
CE
1.0
(sat), V
BE
V
0.5
0.1 1 10
VBE(sat)
VCE(sat)
IC = 250I
B
IC[A], COLLECTOR CURRENT
Collector-Emitter Saturation Voltage
10
1
ob
0.1
[A], COLLECTOR CURRENT
C
I
0.01
1 10 100
VCE[V], COLLECTOR-EMITTER VOLTAGE
100us
500us
1ms
5ms
DC
TIP120
TIP121
TIP122
Figure 3. Output and Input Capacitance
vs. Reverse Voltage
80
70
60
50
40
30
20
[W], POWER DISSIPATION
C
P
10
0
0 25 50 75 100 125 150 175
TC[oC], CASE TEMPERATURE
Figure 5. Power Derating
©2001 Fairchild Semiconductor Corporation
Figure 4. Safe Operating Area
Rev. A1, June 2001
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