Fairchild Semiconductor TIP111, TIP110 Datasheet
TIP110/111/112
Monolithic Construction With Built In BaseEmitter Shunt Resistors
• Complementary to TIP115/116/117
• High DC Current Gain : h
• Low Collector-Emitter Saturation Voltage
• Industrial Use
NPN Epitaxial Silicon Darlington Transistor
=1000 @ VCE=4V, IC=1A(Min.)
FE
1
TO-220
1.Base 2.Collector 3.Emitter
TIP110/111/112
Absolute Maximum Ratings
Symbol Parameter Value Units
V
CBO
Collector-Base Voltage : TIP110
Collector-Emitter Voltage : TIP110
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
Emitter-Base Voltage 5 V
Collector Current (DC) 2 A
Collector Current (Pulse) 4 A
Base Current (DC) 50 mA
Collector Dissipation (Ta=25°C) 2 W
Collector Dissipation (T
T
J
T
STG
Junction Temperature 150 °C
Storage Temperature - 65 ~ 150 °C
Electrical Characteristics
TC=25°C unless otherwise noted
60
: TIP111
: TIP1 1 2
80
100
60
: TIP111
: TIP1 1 2
=25°C) 50 W
C
80
100
TC=25°C unless otherwise noted
Equivalent Circuit
V
V
V
V
B
V
V
R
110
R
20.6
R1
R2
k
Ω≅
k
Ω≅
Symbol Parameter Test Condition Min. Max. Units
V
(sus) Collector-Emitter Sustaining Voltage
CEO
: TIP110
: TIP111
: TIP112
ICEO
Collector Cut-off Current
: TIP110
: TIP111
: TIP112
I
CBO
Collector Cut-off Current
: TIP110
: TIP111
: TIP112
IEBO
hFE
(sat) Collector-Emitter Saturation Voltage IC = 2A, IB = 8mA 2.5 V
V
CE
(on) Base-Emitter ON Voltage V
V
BE
C
ob
Emitter Cut-off Current V
DC Current Gain V
Output Capacitance V
= 30mA, IB = 0 60
I
C
80
100
= 30V, IB = 0
V
CE
= 40V, IB = 0
V
CE
V
= 50V, IB = 0
CE
= 60V, IE = 0
V
CB
V
= 80V, IE = 0
CB
= 100V, IE = 0
V
CB
= 5V, IC = 0 2 mA
BE
= 4V, IC = 1A
CE
= 4V, IC = 2A
V
CE
= 4V, IC = 2A 2.8 V
CE
= 10V, IE = 0, f = 0.1MHz 100 pF
CB
1000
500
2
2
2
1
1
1
C
E
V
V
V
mA
mA
mA
mA
mA
mA
©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001
Typical Characteristics
TIP110/111/112
2.0
IB = 500 uA
1.8
IB = 450 uA
1.6
IB = 400 uA
1.4
1.2
1.0
0.8
0.6
[A], COLLECTOR CURRENT
0.4
C
I
0.2
0.0
012345
= 350 uA
B
I
= 300 uA
I
B
= 250 uA
I
B
IB = 200 uA
IB = 150 uA
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic Figure 2. DC current Gain
100
10
1
(sat)[V], SATURATION VOLTAGE
CE
(sat), V
BE
V
0.1
0.01 0.1 1 10
IC[A], COLLECTOR CURRENT
IC = 500 I
VBE(sat)
VCE(sat)
10000
VCE = 4V
1000
100
, DC CURRENT GAIN
FE
h
10
0.01 0.1 1 10
IC[A], COLLECTOR CURRENT
1000
B
100
10
[pF], CAPACITANCE
ob
C
1
0.01 0.1 1 10 100
f = 0.1 MHz
VCB[V], COLLECTOR-BASE VOLTAGE
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
10
1
[A], COLLECTOR CURRENT
C
I
0.1
1 10 100
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 5. Safe Operating Area Figure 6. Power Derating
©2001 Fairchild Semiconductor Corporation
TIP 110
TIP 111
TIP 112
Figure 4. Collector Output Capacitance
80
70
5mS
1mS
DC
60
50
40
30
20
[W], POWER DISSIPATION
C
P
10
0
0 255075100125150175
TC[oC], CASE TEMPERATURE
Rev. A1, June 2001
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