TIP110/111/112
Monolithic Construction With Built In BaseEmitter Shunt Resistors
• Complementary to TIP115/116/117
• High DC Current Gain : h
• Low Collector-Emitter Saturation Voltage
• Industrial Use
NPN Epitaxial Silicon Darlington Transistor
=1000 @ VCE=4V, IC=1A(Min.)
FE
1
TO-220
1.Base 2.Collector 3.Emitter
TIP110/111/112
Absolute Maximum Ratings
Symbol Parameter Value Units
V
CBO
Collector-Base Voltage : TIP110
Collector-Emitter Voltage : TIP110
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
Emitter-Base Voltage 5 V
Collector Current (DC) 2 A
Collector Current (Pulse) 4 A
Base Current (DC) 50 mA
Collector Dissipation (Ta=25°C) 2 W
Collector Dissipation (T
T
J
T
STG
Junction Temperature 150 °C
Storage Temperature - 65 ~ 150 °C
Electrical Characteristics
TC=25°C unless otherwise noted
60
: TIP111
: TIP1 1 2
80
100
60
: TIP111
: TIP1 1 2
=25°C) 50 W
C
80
100
TC=25°C unless otherwise noted
Equivalent Circuit
V
V
V
V
B
V
V
R
110
R
20.6
R1
R2
k
Ω≅
k
Ω≅
Symbol Parameter Test Condition Min. Max. Units
V
(sus) Collector-Emitter Sustaining Voltage
CEO
: TIP110
: TIP111
: TIP112
ICEO
Collector Cut-off Current
: TIP110
: TIP111
: TIP112
I
CBO
Collector Cut-off Current
: TIP110
: TIP111
: TIP112
IEBO
hFE
(sat) Collector-Emitter Saturation Voltage IC = 2A, IB = 8mA 2.5 V
V
CE
(on) Base-Emitter ON Voltage V
V
BE
C
ob
Emitter Cut-off Current V
DC Current Gain V
Output Capacitance V
= 30mA, IB = 0 60
I
C
80
100
= 30V, IB = 0
V
CE
= 40V, IB = 0
V
CE
V
= 50V, IB = 0
CE
= 60V, IE = 0
V
CB
V
= 80V, IE = 0
CB
= 100V, IE = 0
V
CB
= 5V, IC = 0 2 mA
BE
= 4V, IC = 1A
CE
= 4V, IC = 2A
V
CE
= 4V, IC = 2A 2.8 V
CE
= 10V, IE = 0, f = 0.1MHz 100 pF
CB
1000
500
2
2
2
1
1
1
C
E
V
V
V
mA
mA
mA
mA
mA
mA
©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001
Typical Characteristics
TIP110/111/112
2.0
IB = 500 uA
1.8
IB = 450 uA
1.6
IB = 400 uA
1.4
1.2
1.0
0.8
0.6
[A], COLLECTOR CURRENT
0.4
C
I
0.2
0.0
012345
= 350 uA
B
I
= 300 uA
I
B
= 250 uA
I
B
IB = 200 uA
IB = 150 uA
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic Figure 2. DC current Gain
100
10
1
(sat)[V], SATURATION VOLTAGE
CE
(sat), V
BE
V
0.1
0.01 0.1 1 10
IC[A], COLLECTOR CURRENT
IC = 500 I
VBE(sat)
VCE(sat)
10000
VCE = 4V
1000
100
, DC CURRENT GAIN
FE
h
10
0.01 0.1 1 10
IC[A], COLLECTOR CURRENT
1000
B
100
10
[pF], CAPACITANCE
ob
C
1
0.01 0.1 1 10 100
f = 0.1 MHz
VCB[V], COLLECTOR-BASE VOLTAGE
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
10
1
[A], COLLECTOR CURRENT
C
I
0.1
1 10 100
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 5. Safe Operating Area Figure 6. Power Derating
©2001 Fairchild Semiconductor Corporation
TIP 110
TIP 111
TIP 112
Figure 4. Collector Output Capacitance
80
70
5mS
1mS
DC
60
50
40
30
20
[W], POWER DISSIPATION
C
P
10
0
0 255075100125150175
TC[oC], CASE TEMPERATURE
Rev. A1, June 2001
Package Demensions
±0.10
(1.70)
1.30
±0.20
9.20
(1.46)
9.90
(8.70)
ø3.60
TO-220
±0.20
±0.10
(45°)
(3.70)(3.00)
±0.10
2.80
±0.20
15.90
18.95MAX.
4.50
1.30
±0.20
+0.10
–0.05
TIP110/111/112
±0.20
13.08
(1.00)
1.27
2.54TYP
±0.20
[2.54
±0.10
]
10.00
±0.20
1.52
±0.10
0.80
±0.10
2.54TYP
±0.20
[2.54
±0.30
10.08
+0.10
0.50
–0.05
2.40
±0.20
]
Dimensions in Millimeters
©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
A
CEx™
Bottomless™
CoolFET™
CROSSVOLT™
DenseTrench™
DOME™
EcoSPARK™
2
E
CMOS™
EnSigna™
FACT™
FACT Quiet Series™
STAR*POWER is used under license
FAST
FASTr™
FRFET™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MICROWIRE™
OPTOLOGIC™
®
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerTrench
®
QFET™
QS™
QT Optoelectronics™
Quiet Series™
SLIENT SWITCHER
SMART START™
STAR*POWER™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TruTranslation™
TinyLogic™
UHC™
®
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VCX™
®
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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In
Design
Preliminary First Production This datasheet contains preliminary data, and
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Obsolete Not In Production This datasheet contains specifications on a product
©2001 Fairchild Semiconductor Corporation Rev. H3
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
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