Fairchild Semiconductor TIP107, TIP106, TIP105 Datasheet

TIP105/106/107

Monolithic Construction With Built In Base­Emitter Shunt Resistors

• High DC Current Gain : hFE=1000 @ VCE= -4V, IC= -3A (Min.)

• Collector-Emitter Sustaining Voltage

• Low Collector-Emitter Saturation Voltage

• Industrial Use

• Complementary to TIP100/101/102

PNP Epitaxial Silicon Darlington Transistor

1

TO-220

1.Base 2.Collector 3.Emitter

TIP105/106/107

Absolute Maximum Ratings

TC=25°C unless otherwise noted

Equivalent Circuit

Symbol Parameter Value Units

V

CBO

V

CEO

V

EBO

I

C

I

CP

I

B

P

C

T

J

T

STG

Collector-Base Voltage : TIP105

Collector-Emitter Voltage : TIP105

Emitter-Base Voltage - 5 V
Collector Current (DC) - 8 A
Collector Current (Pulse) - 15 A
Base Current (DC) - 1 A
Collector Dissipation (Ta=25°C) 2 W
Collector Dissipation (T

C

Junction Temperature 150 °C
Storage T emperature - 65 ~ 150 °C

Electrical Characteristics

: TIP106
: TIP107

: TIP106
: TIP107

=25°C) 80 W

TC=25°C unless otherwise noted

- 60

- 80

- 100

- 60

- 80

- 100

V
V
V

B

V
V
V

R

110

R

20.6

R1

R2

k

Ω≅

k

Ω≅

Symbol Parameter Test Condition Min. Max. Units

V

(sus) Collector -Em itter Sustaining Voltage

CEO

: TIP105
: TIP106
: TIP107

ICEO

Collector Cut-off Current

: TIP105
: TIP106
: TIP107

I

CBO

Collector Cut-off Current

: TIP105
: TIP106
: TIP107

IEBO
hFE

V

(sat) Collector-Emitter Saturation Voltage IC = -3A, IB = -6mA

CE

(on) Base-Emitter ON Voltage V

V

BE

C

ob

Emitter Cut-off Current VBE= -5V, IC = 0 -2 mA
DC Current Gain V

Output Capacitance V

= -30mA, IB = 0 -60

I

C

-80

-100

= -30V, IB = 0

V

CE

= -40V, IB = 0

V

CE

V

= -50V, IB = 0

CE

= -60V, IE = 0

V

CB

V

= -80V, IE = 0

CB

= -100V, IE = 0

V

CB

= -4V, IC = -3A

CE

= -4V, IC = -8A

V

CE

1000

200

-50

-50

-50

-50

-50

-50

20000

-2

I

= -8A, IB = -80mA

C

= -4V, IC = -8A -2.8 V

CE

= -10V, IE = 0, f = 0.1MHz 300 pF

CB

-2.5

C

E

V
V
V

µA
µA
µA

µA
µA
µA

V
V

©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001

Typical Characteristics

TIP105/106/107

-5

IB = -1000 uA

IB = -900 uA

-4

-3

-2

[A], COLLECTOR CURRENT

-1

C

I

-0

-0 -1 -2 -3 -4 -5

IB = -800 uA

IB = -700 uA

VCE[V], COLLECTOR-EMITT E R VOL TA G E

Figure 1. Static Characteristic Figure 2. DC current Gain

-100k

-10k

-1k

(sat)[V], SATURATION VOLTAGE

CE

(sat), V

BE

V

-100

-0.1 -1 -10 -100

VBE(sat)

VCE(sat)

IC[A], COLLECTOR CURRENT

IB = -600 uA

IB = -500 uA

IB = -400 uA

IB = -300 uA

IB = -200 uA

IC = 500 I

10k

VCE = -4V

1k

, DC CURRENT GAIN

FE

h

100

-0.1 -1 -10

Ic[A], COLLECTOR CURRENT

B

10k

1k

100

[pF], CAPACITANCE

ob

10

C

1

-0.1 -1 -10 -100

f = 0.1 MHz

= 0

I

E

VCB[V], COLLECTOR-BASE VOLTAGE

Figure 3. Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

-100

-10

-1

-0.1

[mA], COLLECTOR CURRENT

C

I

-0.01

-0.1 -1 -10 -100

VCE[V], COLLECTOR-EMITTER VOLTAGE

Figure 5. Safe Operating Area Figure 6. Power Derating

©2001 Fairchild Semiconductor Corporation

Figure 4. Collector Output Capacitance

1ms

100

µ

s

DC

5ms

TIP105

TIP106

TIP107

100

90

80

70

60

50

40

30

20

[W], POWER DISSIPATION

C

P

10

0

0 255075100125150175

TC[oC], CASE TEMPERATURE

Rev. A1, June 2001