Fairchild Semiconductor TIP100, TIP102, TIP101 Datasheet

TIP100/101/102

Monolithic Construction With Built In Base­Emitter Shunt Resistors

• High DC Current Gain : hFE=1000 @ VCE=4V, IC=3A (Min.)

• Collector-Emitter Sustaining Voltage

• Low Collector-Emitter Saturation Voltage

• Industrial Use

• Complementary to TIP105/106/107

NPN Epitaxial Silicon Darlington Transistor

1

TO-220

1.Base 2.Collector 3.Emitter

TIP100/101/102

Absolute Maximum Ratings

TC=25°C unless otherwise noted

Equivalent Circuit

Symbol Parameter Value Units

V

CBO

V

CEO

V

EBO

I

C

I

CP

I

B

P

C

T

J

T

STG

Collector-Base Voltage : TIP100

Collector-Emitter Voltage : TIP100

Emitter-Base Voltage 5 V
Collector Current (DC) 8 A
Collector Current (Pulse) 15 A
Base Current (DC) 1 A
Collector Dissipation (Ta=25°C) 2 W
Collector Dissipation (T

C

Junction Temperature 150 °C
Storage Temperature - 65 ~ 150 °C

Electrical Characteristics

: TIP101
: TIP102

: TIP101
: TIP102

=25°C) 80 W

TC=25°C unless otherwise noted

60
80

100

60
80

100

V
V
V

B

V
V
V

R

110

R

20.6

R1

R2

k

Ω≅

k

Ω≅

Symbol Parameter Test Condition Min. Max. Units

V

(sus) Collector-Emitter Sustaining Voltage

CEO

: TIP100
: TIP101
: TIP102

ICEO

Collector Cut-off Current

: TIP100
: TIP101
: TIP102

I

CBO

Collector Cut-off Current

: TIP100
: TIP101
: TIP102

IEBO
hFE

V

(sat) Collector-Emitter Saturation Voltage IC = 3A, IB = 6mA

CE

(on) Base-Emitter ON Voltage V

V

BE

C

ob

Emitter Cut-off Current V
DC Current Gain V

Output Capacitance V

= 30mA, IB = 0 60

I

C

80

100

= 30V, IB = 0

V

CE

= 40V, IB = 0

V

CE

V

= 50V, IB = 0

CE

= 60V, IE = 0

V

CE

V

= 80V, IE = 0

CE

= 100V, IE = 0

V

CE

= 5V, IC = 0 2 mA

EB

= 4V, IC = 3A

CE

= 4V, IC = 8A

V

CE

1000

200

50
50
50

50
50
50

20000

2

I

= 8A, IB = 80mA

C

= 4V, IC = 8A 2.8 V

CE

= 10V , IE = 0, f = 0.1M H z 200 pF

CB

2.5

C

E

V
V
V

µA
µA
µA

µA
µA
µA

V
V

©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001

Typical Characteristics

TIP100/101/102

5

IB = 1mA

0.9mA

4

0.8mA

3

2

[A], COLLECTOR CURRENT

1

C

I

700uA

600uA

400uA

IB = 300 uA

IB = 200 uA

500uA

IB = 100 uA

0

012345

VCE[V], COLLECTOR-EMITTER VOLTAGE

Figure 1. Static Characteristic Figure 2. DC current Gain

10k

VBE(sat)

1k

(sat)[V], SATURATION VOLTAGE

CE

(sat), V

BE

V

100

0.1 1 10 100

IC[A], COLLECTOR CURRENT

Ic = 500 I

VCE(sat)

10k

VCE = 4V

1k

, DC CURRENT GAIN

FE

h

100

0.1 1 10

Ic[A], COLLECTOR CURRENT

10k

B

1k

100

[pF], CAPACITANCE

10

ob

C

1

0.1 1 10 100

VCB[V], COLLECTOR-BASE VOLTAGE

Figure 3. Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

100

10

1

0.1

[A], COLLECTOR CURRENT

C

I

0.01

0.1 1 10 100

VCE[V], COLLECTOR-EMITTER VOLTAGE

Figure 5. Safe Operating Area Figure 6. Power Derating

©2001 Fairchild Semiconductor Corporation

Figure 4. Collector Output Capacitance

1ms

100

µ

s

5ms

DC

TIP100
TIP101
TIP102

120

100

80

60

40

[W], POWER DISSIPATION

C

20

P

0

0 255075100125150175

TC[oC], CASE TEMPERATURE

Rev. A1, June 2001