Fairchild Semiconductor MPS3642, PN3642 Datasheet
PN3642
Discrete POWER & Signal
Technologies
NPN General Purpose Amplifier
PN3642
This device is designed for use as general purpose amplifiers
and switches requiring collector currents to 300 mA. Sourced from
Process 10. See PN100 for characteristics.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Value Units
V
CEO
Collector-Emitter Voltage 45 V
V
CBO
Collector-Base Voltage 60 V
V
EBO
Em i t ter- Base V oltag e 5. 0 V
I
C
Collector Current - Continuous 500 mA
TJ, T
stg
Operating and Storage Junction Temperature Range -55 to +150
°C
Symbol Characteri st ic Max Units
PN3642
P
D
Total De vice Dissip at i on
Derate above 25°C
625
5.0
mW
mW/°C
R
θ
JC
Thermal Resistance, Junction to Case 83.3 °C/W
R
θ
JA
Thermal Resistance, Junction to Ambient 200
°C/W
C
B
E
TO-92
1997 Fairchild Semiconductor Corporation
PN3642
NPN General Purpose Amplifier
(continued)
Electrical Characteristics TA = 25°C unless otherwise noted
OFF CHARACTERISTICS
Symbol Parameter Test Conditions Min Max Units
V
(BR)CEO
Collector-Emitter Breakdown Voltage* IC = 10 mA, IB = 045V
V
(BR)CBO
Collector-Base Breakdown Voltage IC = 10 µA, IE = 0 60 V
V
(BR)EBO
Em i t ter- Base B reak down Vol t age IE = 10 µA, IC = 0 5.0 V
I
CES
Collector Cutoff Current VCE = 50 V, IE = 0,
V
CE
= 50 V, IE = 0, TA = 65 °C
50
1.0
nA
µ
A
ON CHARACTERISTICS*
h
FE
DC Curren t Gai n VCE = 10 V, IC = 150 mA
V
CE
= 10 V, IC = 500 mA
40
15
120
V
CE(
sat
)
Collector-Emitter Saturation Voltage IC = 150 mA, IB = 15 mA 0.22 V
SMALL SIGNAL CHARACTERISTICS
C
ob
Output Capacitance VCB = 10 V, f = 140 kHz 8.0 pF
h
fe
Small-Signal Current Gain IC = 50 mA, VCE = 5.0 V,
f = 100 MHz
1.5
G
pe
Amplifier Power Gain VCE = 15 V, IC = 0,
R
g
= 140 Ω, f = 30 MHz,
RL = 260 Ω
10 dB
η
Collec t or Ef ficiency VCE = 15 V, IC = 0,
R
S
= 140 Ω, f = 30 MHz,
RL = 260
Ω
60 %
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
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