Fairchild Semiconductor MPF102 Datasheet
MPF102
G
S
D
TO-92
N-Channel RF Amplifier
This device is designed for electronic switching
Applications such as low ON resistance analog switching.
Sourced from Process 50.
Absolute Maximum Ratings * TA=25 degree C unless otherwise noted
Symbol Parameter Value Units
VDG Drain-Gate Voltage 25 V
VGS Gate-Source Voltage -25 V
IGF Forward Gate Current 10 mA
TJ,Tstg
* This ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES :
1) These rating are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Operating and Storage Junction Temperature Range
-55 to + 155 degree C
Thermal Characteristics TA = 25 degrees C unless otherwise noted.
Symbol Characteristic UnitsMax
PD Total Device Dissipation
Derate above 25 degrees C
RθJC
RθJA
* Device mounted on FR-4 PCB 1.5” X 1.6” X 0.06”
1999 Fairchild Semiconductor Corporation
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
350
2.8
125
357
mW
mW/degrees C
degrees C/W
degrees C/W
N-Channel RF Amplifier
( Continued)
Electrical Characteristics TA= 25 degrees C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max
OFF CHARACTERISTICS
V(BR)GSS
IGSS
VGS(off)
Gate-Source Breakdown Voltage
Gate Reverse Current
Gate-Source Cutoff Voltage
IG=-1.0µA, VDS=0
-25 V
VGS=-15V,VDS=0 -2.0 nA
VDS=15V, ID=2nA -8.0 V
Units
VGS
Gate-Source Voltage
ON CHARACTERISTICS
IDSS
gfs
Zero-Gate Voltage
Drain Current
Forward Transconductance
Capacitance
Ciss
Crss
Common-Source Input
Capacitance
Common-Source reverse
Transfer Capacitance
VDS=15V, ID=200µA
-0.5 -7.5 V
VDS=15V,VGS=0 2.0 20 mA
VGS= 0V,VDS=15V,f=1kHz.
VGS=15V,VDS=0V
2000 7500
7.0 pf
f=1 MHz.
VGS=15V,VDS=0V
3.0 pf
f=1 MHz.
µS
1999 Fairchild Semiconductor Corporation
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