Fairchild Semiconductor MOC3062-M, MOC3063-M, MOC3162-M, MOC3061-M, MOC3163-M Datasheet
6-PIN DIP ZERO-CROSS
PHOTOTRIAC DRIVER OPTOCOUPLER
(600V PEAK)
MOC3061-M MOC3062-M MOC3063-M MOC3162-M MOC3163-M
PACKAGE
ANODE
SCHEMATIC
1
MAIN TERM.
6
6
CATHODE
N/C
2
3
ZERO
CROSSING
CIRCUIT
*DO NOT CONNECT
(TRIAC SUBSTRATE)
6
1
1
NC*
5
4
MAIN TERM.
6
1
DESCRIPTION
The MOC306X-M and MOC316X-M devices consist of a GaAs infrared emitting diode optically coupled to a monolithic silicon
detector performing the function of a zero voltage crossing bilateral triac driver. They are designed for use with a triac in the interface of logic systems to equipment powered from 115/240 VAC lines, such as solid-state relays, industrial controls, motors, solenoids and consumer appliances, etc.
FEATURES
• Simplifies logic control of 115/240 VAC power
• Zero voltage crossing
• dv/dt of 1000 V/µs guaranteed (MOC316X-M),
– 600 V/ms guaranteed (MOC306X-M)
• VDE recognized (File # 94766)
– ordering option V (e.g., MOC3063V-M)
• Underwriters Laboratories (UL) recognized (File #E90700, volume 2)
APPLICATIONS
• Solenoid/valve controls
• Static power switches
•Temperature controls
•AC motor starters
• Lighting controls
•AC motor drives
• E.M. contactors
• Solid state relays
© 2003 Fairchild Semiconductor Corporation
Page 1 of 10
5/29/03
6-PIN DIP ZERO-CROSS
PHOTOTRIAC DRIVER OPTOCOUPLER
(600V PEAK)
MOC3061-M MOC3062-M MOC3063-M MOC3162-M MOC3163-M
ABSOLUTE MAXIMUM RATINGS
Parameters Symbol Device Value Units
TOTAL DEVICE
Storage Temperature T
Operating Temperature T
Lead Solder Temperature T
Junction Temperature Range T
Isolation Surge Voltage
Total Device Power Dissipation @ 25°C
Derate above 25°C 2.94 mW/°C
EMITTER
Continuous Forward Current I
Reverse Voltage V
Total Power Dissipation 25°C Ambient
Derate above 25°C 1.41 mW/°C
DETECTOR
Off-State Output Terminal Voltage V
Peak Repetitive Surge Current (PW = 100 µs, 120 pps) I
Total Power Dissipation @ 25°C Ambient
Derate above 25°C 1.76 mW/°C
(4)
(peak AC voltage, 60Hz, 1 sec duration) V
(T
= 25°C unless otherwise noted)
A
STG
OPR
SOL
J
ISO
P
D
F
R
P
D
DRM
TSM
P
D
All -40 to +150 °C
All -40 to +85 °C
All 260 for 10 sec °C
All -40 to +100 °C
All 7500 Vac(pk)
All
All 60 mA
All 6 V
All
All 600 V
All 1 A
All
250 mW
120 mW
150 mW
© 2003 Fairchild Semiconductor Corporation
Page 2 of 10
5/29/03
6-PIN DIP ZERO-CROSS
PHOTOTRIAC DRIVER OPTOCOUPLER
(600V PEAK)
MOC3061-M MOC3062-M MOC3063-M MOC3162-M MOC3163-M
ELECTRICAL CHARACTERISTICS
(TA = 25°C Unless otherwise specified)
INDIVIDUAL COMPONENT CHARACTERISTICS
Parameters Test Conditions Symbol Device Min Typ* Max Units
EMITTER
Input Forward Voltage I
Reverse Leakage Current V
= 30 mA V
F
= 6 V I
R
F
R
DETECTOR
Peak Blocking Current, Either Direction V
Critical Rate of Rise of Off-State Voltage I
TRANSFER CHARACTERISTICS
= 600V, I
DRM
= 0 (figure 9, note 3) dv/dt
F
(T
A
= 0 (note 1) I
F
= 25°C Unless otherwise specified.)
DRM1
DC Characteristics Test Conditions Symbol Device Min Typ* Max Units
LED Trigger Current
(rated I
FT
)
Peak On-State Voltage, Either Direction
main terminal
Voltage = 3V (note 2)
= 100 mA peak,
I
TM
I
= rated I
F
FT
Holding Current, Either Direction I
I
V
MOC3062-M/
FT
MOC3063-M/
TM
H
All 1.3 1.5 V
All 0.005 100 µA
MOC316X-M 10 100
MOC306X-M 10 500
MOC306X-M 600 1500
MOC316X-M 1000
MOC3061-M 15
MOC3162-M
10
MOC3163-M
All 1.8 3 V
All 500 µA
nA
V/µs
mA
5
ZERO CROSSING CHARACTERISTICS
Characteristics Test Conditions Symbol Device Min Typ* Max Units
Inhibit Voltage (MT1-MT2 voltage
above which device will not
trigger)
Leakage in Inhibited State
I
= Rated I
F
I
= Rated I
F
V
= 600V, off state
DRM
FT
FT
V
INH
,
I
DRM2
MOC3061-M/2M/3M 12 20
MOC3062-M/3M 12 15
All 150 500 µA
ISOLATION CHARACTERISTICS
Characteristics Test Conditions Symbol Device Min Typ* Max Units
Isolation Voltage f = 60 Hz, t = 1 sec V
*Typical values at T
= 25°C
A
ISO
Notes
1. Test voltage must be applied within dv/dt rating.
2. All devices are guaranteed to trigger at an I
between max I
absolute max I
(15 mA for MOC3061-M, 10 mA for MOC3062-M & MOC3162-M, 5 mA for MOC3063-M & MOC3163-M) and
FT
(60 mA).
F
value less than or equal to max I
F
3. This is static dv/dt. See Figure 9 for test circuit. Commutating dv/dt is a function of the load-driving thyristor(s) only.
4. Isolation surge voltage, V
, is an internal device dielectric breakdown rating. For this test, Pins 1 and 2 are common,
ISO
and Pins 4, 5 and 6 are common.
© 2003 Fairchild Semiconductor Corporation
Page 3 of 10
All 7500 V
. Therefore, recommended operating I
FT
lies
F
5/29/03
V
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