Fairchild Semiconductor MOC3043M, MOC3042M, MOC3032M, MOC3031M, MOC3041M Datasheet
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DESCRIPTION
The MOC303XM and MOC304XM devices consist of a AlGaAs
infrared emitting diode optically coupled to a monolithic silicon
detector performing the function of a zero voltage crossing bilateral triac driver.
They are designed for use with a triac in the interface of logic
systems to equipment powered from 115 VAC lines, such as
teletypewriters, CRTs, solid-state relays, industrial controls,
printers, motors, solenoids and consumer appliances, etc.
APPLICATIONS
• Solenoid/valve controls • Lighting controls
• Static power switches • AC motor drives
• Temperature controls • E.M. contactors
• AC motor starters • Solid state relays
FEATURES
• Simplifies logic control of 115 VAC power
• Zero voltage crossing
• dv/dt of 2000 V/µs typical, 1000 V/µs guaranteed
• VDE recognized (File # 94766)
-ordering option V (e.g., MOC3043VM)
6
1
6
6
1
1
SCHEMATIC
Parameters Symbol Device Value Units
TOTAL DEVICE
T
STG
All -40 to +150 °C
Storage Temperature
Operating Temperature T
OPR
All -40 to +85 °C
Lead Solder Temperature T
SOL
All 260 for 10 sec °C
Junction Temperature Range T
J
All -40 to +100 °C
Isolation Surge Voltage
(1)
(peak AC voltage, 60Hz, 1 sec duration) V
ISO
All 7500 Vac(pk)
Total Device Power Dissipation @ 25°C
P
D
All
250 mW
Derate above 25°C 2.94 mW/°C
EMITTER
I
F
All 60 mA
Continuous Forward Current
Reverse Voltage V
R
All 6
V
Total Power Dissipation 25°C Ambient
P
D
All
120 mW
Derate above 25°C 1.41 mW/°C
DETECTOR MOC3031M/2M/3M
250
Off-State Output Terminal Voltage
V
DRM
MOC3041M/2M/3M
400
V
Peak Repetitive Surge Current (PW = 100 µs, 120 pps) I
TSM
All 1 A
Total Power Dissipation @ 25°C Ambient
P
D
All 150 mW
Derate above 25°C All 1.76 mW/°C
2001 Fairchild Semiconductor Corporation
DS300256 8/06/01 1 OF 9 www.fairchildsemi.com
ABSOLUTE MAXIMUM RATINGS (TA= 25°C unless otherwise noted)
6-PIN DIP ZERO-CROSS
OPTOISOLATORS TRIAC DRIVER OUTPUT
(250/400 VOLT PEAK)
MOC3031M MOC3032M MOC3033M MOC3041M MOC3042M MOC3043M
Note
1. Isolation surge voltage, V
ISO
, is an internal device dielectric breakdown rating. For this test, Pins 1 and 2 are common, and Pins 4,
5 and 6 are common.
ANODE
CATHODE
1
2
3
N/C
*DO NOT CONNECT
(TRIAC SUBSTRATE)
CROSSING
CIRCUIT
ZERO
MAIN TERM.
6
NC*
5
4
MAIN TERM.
Parameters Test Conditions Symbol Device Min Typ Max Units
EMITTER
Input Forward Voltage
I
F
= 30 mA V
F
All 1.25 1.5 V
Reverse Leakage Current
V
R
= 6 V
I
R
All 0.01 100
µA
DETECTOR
Peak Blocking Current,Either Direction Rated V
DRM
, IF= 0 (note 1) I
DRM1
All
100
nA
Peak On-State Voltage,Either Direction
I
TM
= 100 mA peak, IF= 0 V
TM
All 1.8 3 V
Critical Rate of Rise of Off-State Voltage
I
F
= 0 (figure 9, note 3)
dv/dt
All 1000 V/µs
INDIVIDUAL COMPONENT CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
(TA= 25°CUnless otherwise specified)
DC Characteristics Test Conditions Symbol Device Min Typ Max Units
MOC3031M/MOC3041M 15
LED Trigger Current Main terminal voltage = 3V (note 2)
I
FT
MOC3032M/MOC3042M
10 mA
MOC3033M/MOC3043M
5
Holding Current, Either Direction I
H
All 400 µA
TRANSFER CHARACTERISTICS
(TA= 25°C Unless otherwise specified.)
www.fairchildsemi.com 2 OF 9 8/06/01 DS300256
Note
1. Test voltage must be applied within dv/dt rating.
2. All devices are guaranteed to trigger at an I
F
value less than or equal to max IFT. Therefore, recommended operating IFlies between
max I
FT
(15 mA for MOC3031M & MOC3041M, 10 mA for MOC3032M & MOC3042M, 5 mA for MOC3033M & MOC3043M) and
absolute max I
F
(60 mA).
3. This is static dv/dt. See Figure 9 for test circuit. Commutating dv/dt is a function of the load-driving thyristor(s) only.
Characteristics Test Conditions Symbol Device Min Typ Max Units
Inhibit Voltage
I
F
= rated IFT, MT1-MT2 voltage above
V
IH
All 20 V
which device will not trigger off-state
Leakage in Inhibited State IF= rated IF, rated V
DRM
, off-state I
DRM2
All 500 µA
ZERO CROSSING CHARACTERISTICS
(TA= 25°C Unless otherwise specified.)
6-PIN DIP ZERO-CROSS
OPTOISOLATORS TRIAC DRIVER OUTPUT
(250/400 VOLT PEAK)
MOC3031M MOC3032M MOC3033M MOC3041M MOC3042M MOC3043M
DS300256 8/06/01 3 OF 9 www.fairchildsemi.com
6-PIN DIP ZERO-CROSS
OPTOISOLATORS TRIAC DRIVER OUTPUT
(250/400 VOLT PEAK)
MOC3031M MOC3032M MOC3033M MOC3041M MOC3042M MOC3043M
Figure 1. LED Forward Voltage vs. Forward Current Figure 2. On-State Characteristics
1.6
1.5
800
600
IF = 30mA
= 25oC
T
A
1.4
1.3
1.2
1.1
- FORWARD VOLTAGE (V)
F
V
1.0
0.9
0.8
0.1 1 10 100
TA = -40oC
= 25oC
T
A
TA = 85oC
IF - LED FORWARD CURRENT (mA)
Figure 3. Trigger Current vs. Temperature Figure 4. Leakage Current, I
1.3
1.2
1.1
400
200
0
-200
, ON-STATE CURRENT (mA)
-400
TM
I
-600
-800
-4-3-2-101234
VTM, ON-STATE VOLTAGE (VOLTS)
vs. Temperature
DRM
10000
1000
100
, NORMALIZED
1.0
FT
I
0.9
NORMALIZED TO
= 25oC
T
A
0.8
-40 -20 0 20 40 60 80 100
TA, AMBIENT TEMPERATURE (oC)
10
, LEAKAGE CURRENT (nA)
DRM
I
1
0.1
-40 -20 0 20 40 60 80 100
TA, AMBIENT TEMPERATURE (oC)
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