Fairchild Semiconductor MOC213-M, MOC212-M, MOC211-M Datasheet

SMALL OUTLINE OPTOCOUPLERS

MOC211-M MOC212-M MOC213-M

DESCRIPTION

These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector, in a surface mountable, small outline, plastic package. They are ideally suited for high density applications, and eliminate the need for through-the-board mounting.

FEATURES

• UL Recognized (File #E90700, volume 2)

• VDE Recognized (File #136616) (add option ‘V’ for VDE approval, e.g., MOC211V-M)

• Convenient Plastic SOIC-8 Surface Mountable Package Style

• Standard SOIC-8 Footprint, with 0.050" Lead Spacing

• Compatible with Dual Wave, Vapor Phase and IR Reﬂow Soldering

• High Input-Output Isolation of 2500 V

• Minimum BV

of 30V guaranteed

CEO

APPLICATIONS

• General Purpose Switching Circuits

• Interfacing and coupling systems of different potentials and impedances

• Regulation Feedback Circuits

• Monitor and Detection Circuits

AC(rms)

Guaranteed

TRANSISTOR OUTPUT

ANODE

CATHODE

N/C

1

2

3

4 5

8

N/C

7

BASE

COLLECTOR

6

EMITTER

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SMALL OUTLINE OPTOCOUPLERS

TRANSISTOR OUTPUT

MOC211-M MOC212-M MOC213-M

ABSOLUTE MAXIMUM RATINGS

(T

= 25°C Unless otherwise speciﬁed)

A

Rating Symbol Value Unit

EMITTER

I

F

I

F

(pk)

V

R

P

D

60 mA

1.0 A

6.0 V

90

0.8

mW

mW/°C

Forward Current – Continuous

Forward Current – Peak (PW = 100 µs, 120 pps)

Reverse Voltage

LED Power Dissipation @ T

= 25°C

A

Derate above 25°C

DETECTOR

Collector-Emitter Voltage

Emitter-Collector Voltage

Collector-Base Voltage

Collector Current-Continuous

Detector Power Dissipation @ T Derate above 25°C

= 25°C

A

V

CEO

ECO

CBO

I

C

P

D

30 V

7.0 V

70 V

150 mA

150

1.76

mW

mW/°C

TOTAL DEVICE

Input-Output Isolation Voltage (1,2,3) (f = 60 Hz, t = 1 min.)

Total Device Power Dissipation @ T

= 25°C

A

Derate above 25°C

Ambient Operating Temperature Range

Storage Temperature Range

V

ISO

P

D

T

A

T

stg

2500 Vac(rms)

250

2.94

mW

mW/°C

-40 to +100 °C

-40 to +150 °C

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4/10/03

SMALL OUTLINE OPTOCOUPLERS

TRANSISTOR OUTPUT

MOC211-M MOC212-M MOC213-M

ELECTRICAL CHARACTERISTICS

(T

= 25°C Unless otherwise speciﬁed)

A

Parameter Test Conditions Symbol Min Typ** Max Unit

EMITTER

(I

Input Forward Voltage

Reverse Leakage Current

Input Capacitance

= 10 mA) V

F

(V

= 6.0 V) I

R

F

R

C

IN

— 1.15 1.5 V

— 0.001 100 µA

—18— pF

DETECTOR

Collector-Emitter Dark Current

Collector-Emitter Breakdown Voltage

Emitter-Collector Breakdown Voltage

Collector-Emitter Capacitance

= 10 V, T

(V

CE

(V

= 10 V, T

CE

(f = 1.0 MHz, V

= 25°C)

A

= 100°C)

A

(I

= 100 µA) BV

C

(I

= 100 µA) BV

E

= 0) C

CE

I

CEO1

I

CEO2

CEO

ECO

CE

— —

1.0

50 —

nA µA

30 90 — V

7.0 7.8 — V

— 7.0 — pF

COUPLED

(2)

(4)

(1,2,3)

Collector-Output Current

Isolation Surge Voltage

Isolation Resistance

Collector-Emitter Saturation Voltage

Isolation Capacitance

(2)

Tu r n-On Time

Tu r n-Off Time

Rise Time

Fall Time

MOC211-M MOC212-M (I

MOC213-M

(I

= 2.0 mA, V

C

(I

= 2.0 mA, V

C

(I

= 2.0 mA, V

C

(I

= 2.0 mA, V

C

= 10 mA, V

F

= 10 V)

CE

(60 Hz AC Peak, 1 min.)

(V = 500 V)

(I

= 2.0 mA, I

C

= 10 mA) V

F

(V = 0 V, f = 1 MHz)

= 10 V, R

CC

= 100 Ω )

L

(Fig. 6)

= 10 V, R

CC

= 100 Ω )

L

(Fig. 6)

= 10 V, R

CC

= 100 Ω )

L

(Fig. 6)

= 10 V, R

CC

= 100 Ω )

L

(Fig. 6)

CTR

V

ISO

R

ISO

CE (sat)

C

ISO

t

on

t

off

t

r

t

f

20 50

100

65 90

140

— — —

%

2500 — — Vac(rms)

11

10

—— Ω

— 0.15 0.4 V

— 0.2 — pF

— 7.5 — µs

— 5.7 — µs

— 3.2 — µs

— 4.7 — µs

** Typical values at T

1. Isolation Surge Voltage, V

= 25°C

A

, is an internal device dielectric breakdown rating.

ISO

2. For this test, Pins 1 and 2 are common and Pins 5, 6 and 7 are common. rating of 2500 V

3. V

ISO

4. Current Transfer Ratio (CTR) = I

for t = 1 min. is equivalent to a rating of 3,000 V

AC(rms)

/I

x 100%.

C

F

Page 3 of 9

AC(rms)

for t = 1 sec.

4/10/03