Fairchild Semiconductor MM74HCT08SJX, MM74HCT08MTC, MM74HCT08MTCX, MM74HCT08MX, MM74HCT08N Datasheet

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December 1983 Revised February 1999
MM74HCT08 Quad 2-Input AND Gate
© 1999 Fairchild Semiconductor Corporation DS005754.prf www.fairchildsemi.com
MM74HCT08 Quad 2-Input AND Gate
General Description
The MM74HCT08 is a logic function fabricated by using advanced silicon-gate CMOS technology which provides
the inherent benefit s of CMOS—low qui escent power and wide power supply range. This device is input and outp ut characteristic and pinout compatible with standard 74LS logic families. All inputs are protected from static discharge damage by internal diodes to V
CC
and ground.
MM74HCT devices are intended to i nterface between TTL and NMOS components and standard CMOS devices.
These parts are also plug-in replacements for LS-TTL devices and can be used to redu ce power consumption in existing designs.
Features
TTL, LS pin-out and threshold compatible
Fast switching: t
PLH
, t
PHL
= 12 ns (typ)
Low power: 10 µW at DC
High fan-out, 10 LS-TTL loads
Ordering Code:
Devices also available in Tape and Reel. Specify by appending the suffix letter “X” to the ordering code.
Connection Diagram
Pin Assignments for DIP, SOIC, SOP and TSSOP
Logic Diagram
Order Number Package Number Package Description
MM74HCT08M M14A 14-Lead Small Outline Integrated Circuit (SOIC), JEDEC MS-120, 0.150” Narrow MM74HCT08SJ M14D 14-Lead Small Outline Package (SOP), EIAJ TYPE II, 5.3mm Wide MM74HCT08MTC MTC14 14-Lead Thin Shrink Small Outline Package (TSSOP), JEDEC MO-153, 4.4mm Wide MM74HCT08N N14A 14-Lead Plastic Dual-In-Line Package (PDIP), JEDEC MS-001, 0.300” Wide
www.fairchildsemi.com 2
MM74HCT08
Absolute Maximum Ratings(Note 1)
(Note 2)
Recommended Operating Conditions
Note 1: Absolute Maximum Ratings are those values beyond which dam-
age to the device may occur.
Note 2: Unless otherwise specified all voltages are referenced to gro und. Note 3: Power Dissipation temperature derating — plas t ic “N ” package 12
mW/°C from 65°C to 85°C.
DC Electrical Characteristics
V
CC
= 5V ± 10% (unless otherwise specified)
Note 4: This is measured per input with all oth er inputs held at VCC or ground.
Supply Voltage (VCC) 0.5 to +7.0V DC Input Voltage (V
IN
) 1.5 to VCC +1.5V
DC Output Voltage (V
OUT
) 0.5 to VCC +0.5V
Clamp Diode Current (I
IK
, IOK) ±20 mA
DC Output Current, per pin (I
OUT
) ±25 mA
DC V
CC
or GND Current, per pin (ICC) ±50 mA
Storage Temperature Range (T
STG
) 65°C to +150°C
Power Dissipation (P
D
) (Note 3) 600 mW S.O. Package only 500 mW
Lead Temperature (T
L
) (Soldering 10 seconds) 260°C
Min Max Units
Supply Voltage (V
CC
)4.55.5V
DC Input or Output Voltage
(V
IN
, V
OUT
)0V
CC
V
Operating Temperature Range (T
A
) 40 +85 °C
Input Rise or Fall Times
(t
r
, tf)500ns
Symbol Parameter Conditions
TA = 25°CTA = −40 to 85°CTA = −55 to 125°C
Units
Typ Guaranteed Limits
V
IH
Minimum HIGH Level 2.0 2.0 2.0 V Input Voltage
V
IL
Maximum LOW Level 0.8 0.8 0.8 V Input Voltage
V
OH
Minimum HIGH Level V
IN
= VIH or V
IL
Output Voltage |I
OUT
| = 20 µAV
CCVCC
0.1 VCC− 0.1 VCC− 0.1 V
|I
OUT
| = 4.0 mA, V
CC
= 4.5V 4.2 3.98 3.84 3.7 V
|I
OUT
| = 4.8 mA, V
CC
= 5.5V 5.2 4.98 4.84 4.7 V
V
OL
Maximum LOW Level V
IN
= V
IH
Voltage |I
OUT
| = 20 µA 0 0.1 0.1 0.1 V
|I
OUT
| = 4.0 mA, VCC = 4.5V 0.2 0.26 0.33 0.4 V
|I
OUT
| = 4.8 mA, V
CC
= 5.5V 0.2 0.26 0.33 0.4 V
I
IN
Maximum Input V
IN
= VCC or GND, VIH or V
IL
±0.1 ±1.0 ±1.0 µA
Current
I
CC
Maximum Quiescent V
IN
= VCC or GND 2.0 20 40 µA
Supply Current I
OUT
= 0 µA
V
IN
= 2.4V or 0.5V (Note 4) 1.2 1.4 1.5 mA
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