Fairchild Semiconductor MM74HC245AWMX, MM74HC245ASJX, MM74HC245ACW, MM74HC245AMTC, MM74HC245AMTCX Datasheet

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September 1983 Revised February 1999
MM74HC245A Octal 3-STATE Transceiver
© 1999 Fairchild Semiconductor Corporation DS005165.prf www.fairchildsemi.com
MM74HC245A Octal 3-STATE Transceiver
General Description
The MM74HC245A 3-STATE bidirectional buffer utilizes advanced silicon-gate CMOS technology, and is intended for two-way asynchronous communication between data buses. It has high drive current out puts which enable high speed operation even when driving large bus capaci­tances. This circuit possesses the low power co nsumption and high noise immunity usually associated with CMOS cir­cuitry, yet has speeds comparable to low power Schottky TTL circuits.
This device has an active LOW enable input G
and a direc­tion control input, DIR. When DIR is HIGH, data flows from the A inputs to the B outputs. When DIR is LOW, data flows from the B inputs to the A outputs. The MM74HC245A transfers true data from one bus to the other.
This device can drive up to 15 LS-TTL Loads, and does not have Schmitt trigg er inputs. All inputs are protected from damage due to static discharge by diodes to V
CC
and
ground.
Features
Typical propagation delay: 13 ns
Wide power supply range: 2–6V
Low quiescent current: 80 µA maximum (74 HC)
3-STATE outputs for connection to bus oriented systems
High output drive: 6 mA (minimum)
Same as the 645
Ordering Code:
Devices also availab le in Tape and Reel. Specify by appending th e s uffix let t er “X” to the ordering cod e.
Connection Diagram
Pin Assignments f or DIP, SOIC, SOP and TSSOP
Top View
Truth Table
H = HIGH Level L = LOW Level X = Irrelevant
Order Number Package Number Package Description
MM74HC245AWM M20B 20-Lead Small Outline Integrated Circuit (SOIC), JEDEC MS-013, 0.300” Wide MM74HC245ASJ M20D 20-Lead Small Outline Package (SOP), EIAJ TYPE II, 5.3mm Wide MM74HC245AMTC MTC20 20-Lead Thin Shrink Small Outline Package (TSSOP), JEDEC MO-153, 4.4mm Wide MM74HC245AN N20A 20-Lead Plastic Dual-In-Line Package (PDIP), JEDEC MS-001, 0.300” Wide
Control
Inputs Operation
G
DIR
L L B data to A bus L H A data to B bus
HX Isolation
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MM74HC245A
Logic Diagram
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MM74HC245A
Absolute Maximum Ratings(Note 1)
(Note 2)
Recommended Operating Conditions
Note 1: Maximum Ratings are those values beyond which damage to the
device may occur.
Note 2: Unless otherwise specified all voltages are referenced to ground. Note 3: Power Dissipation te mperature d erating — pl astic “N” pa ckage:
12 mW/°C from 65°C to 85°C.
DC Electrical Characteristics (Note 4)
Note 4: For a powe r supply o f 5V ±10% the worst case output voltages (VOH, and VOL) occur for HC at 4.5V. Thus the 4. 5V valu es shou ld be u sed when
designing with this supply. Worst case V
IH
and VIL occur at V
CC
= 5.5V and 4.5V respectively. (The VIH value at 5.5V is 3 .8 5V.) The worst c as e leakage cur-
rent (I
IN
, ICC, and IOZ) occur for CMOS at the higher voltage and so th e 6. 0V values should be used.
Supply Voltage (VCC) 0.5 to +7.0V DC Input Voltage DIR and G
pins (VIN) 1.5 to V
CC
+1.5V
DC Input/Output Voltage (V
IN
, V
OUT
) 0.5 to V
CC
+0.5V
Clamp Diode Current (I
CD
) ±20 mA
DC Output Current, per pin (I
OUT
) ±35 mA
DC V
CC
or GND Current, per pin (ICC) ±70 mA
Storage Temperature Range (T
STG
) 65°C to +150°C
Power Dissipation (P
D
) (Note 3) 600 mW S.O. Package only 500 mW
Lead Temperature (T
L
) (Soldering 10 second s) 260°C
Min Max Units
Supply Voltage (V
CC
)26V
DC Input or Output Voltage
(V
IN
, V
OUT
)0V
CC
V
Operating Temperature Range (T
A
) 40 +85 °C
Input Rise/Fall Times
(t
r
, tf) V
CC
= 2.0V 1000 ns
V
CC
= 4.5V 500 ns
V
CC
= 6.0V 400 ns
Symbol Parameter Conditions
V
CC
TA = 25°CTA = −40 to 85°CTA = −55 to 125°C
Units
Typ Guaranteed Limits
V
IH
Minimum HIGH Level Input 2.0V 1.5 1.5 1.5 V Voltage 4.5V 3.15 3.15 3.15 V
6.0V 4.2 4.2 4.2 V
V
IL
Maximum LOW Level Input 2.0V 0.5 0.5 0.5 V Voltage 4.5V 1.35 1.35 1.35 V
6.0V 1.8 1.8 1.8 V
V
OH
Minimum HIGH Level Output V
IN
= VIH or V
IL
Voltage |I
OUT
| 20 µA 2.0V 2.0 1.9 1.9 1.9 V
4.5V 4.5 4.4 4.4 4.4 V
6.0V 6.0 5.9 5.9 5.9 V
V
IN
= VIH or V
IL
|I
OUT
| 6.0 mA 4.5V 4.2 3.98 3.84 3.7 V
|I
OUT
| 7.8 mA 6.0V 5.7 5.48 5.34 5.2 V
V
OL
Maximum LOW Level Output V
IN
= VIH or V
IL
Voltage |I
OUT
| 20 µA 2.0V 0 0.1 0.1 0.1 V
4.5V 0 0.1 0.1 0.1 V
6.0V 0 0.1 0.1 0.1 V
V
IN
= VIH or V
IL
|I
OUT
| 6.0 mA 4.5V 0.2 0.26 0.33 0.4 V
|I
OUT
| 7.8 mA 6.0V 0.2 0.26 0.33 0.4 V
I
IN
Input Leakage V
IN
= VCC to GND 6.0V ±0.1 ±1.0 ±1.0 µA
Current (G and DIR)
I
OZ
Maximum 3-STATE Output V
OUT
= VCC or GND 6.0V ±0.5 ±5.0 ±10 µA
Leakage Current
Enable G = V
IH
I
CC
Maximum Quiescent Supply V
IN
= VCC or GND 6.0V 8.0 80 160 µA
Current I
OUT
= 0 µA
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