Fairchild Semiconductor MM74HC02SJ, MM74HC02SJX, MM74HC02MTCX, MM74HC02MX, MM74HC02N Datasheet

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September 1983 Revised February 1999
MM74HC02 Quad 2-Input NOR Gate
© 1999 Fairchild Semiconductor Corporation DS005294.prf www.fairchildsemi.com
MM74HC02 Quad 2-Input NOR Gate
General Description
The MM74HC02 NOR gates utilize advanced silicon-gate CMOS technology to achieve operating speeds similar to LS-TTL gates with the low p ower con sumpti on of standa rd CMOS integrated circuits. All gates have buffered outpu ts, providing high noise immunity and the ability to drive 10 LS-TTL loads. The 74HC logic family is functionally as well as pin-out compatible with the standard 74LS logic family. All inputs are protected from damage due to static dis­charge by internal diode clamps to V
CC
and ground.
Features
Typical propagation delay: 8 ns
Wide power supply range: 2–6V
Low quiescent supply current: 20 µA maximum
(74HC Series)
Low input current: 1 µA maximum
High output current: 4 mA minimum
Ordering Code:
Devices also availab le in Tape and Reel. Specify by appending th e s uffix let t er “X” to the ordering cod e. (Tape and Reel not available in N14A.)
Connection Diagram
Pin Assignment for DIP, SOIC, SOP and TSSOP
Top View
Logic Diagram
Order Number Package Number Package Description
MM74HC02M M14A 14-Lead Small Outline Integrated Circuit (SOIC), JEDEC MS-120, 0.150” Narrow Body MM74HC02SJ M14D 14-Lead Small Outline Package (SOP), EIAJ TYPE II, 5.3mm Wide MM74HC02MTC MTC14 14-Lead Thin Shrink Small Outline Package (TSSOP), JEDEC MO-153, 4.4mm Wide MM74HC02N N14A 14-Lead Plastic Dual-In-Line Package (PDIP), JEDEC MS-001, 0.300” Wide
www.fairchildsemi.com 2
MM74HC02
Absolute Maximum Ratings(Note 1)
(Note 2)
Recommended Operating Conditions
Note 1: Absolute Maximum Ratings are those values beyond which dam-
age to the device may occur.
Note 2: Unless otherwise specified all voltages are referenced to ground. Note 3: Power Dissipation temper ature dera ting — plas tic “N” packa ge:
12 mW/°C from 65 °C to 85°C.
DC Electrical Characteristics (Note 4)
Note 4: For a power supply of 5V ±1 0% the worst c ase ou tput volta ges (VOH, and VOL) occur for HC at 4.5V. Thus the 4. 5V valu es shoul d be use d when
designing with this supply. Worst case V
IH
and VIL occur at VCC=5.5V and 4.5V respectively. (The VIH value at 5.5V is 3.85V.) The worst case leakage current
(I
IN
, ICC, and IOZ) occur for CMOS at the higher voltage and s o th e 6.0V values should be used.
Supply Voltage (VCC) 0.5 to +7.0V DC Input Voltage (V
IN
) 1.5 to V
CC
+1.5V
DC Output Voltage (V
OUT
) 0.5 to V
CC
+0.5V
Clamp Diode Current (I
IK
, IOK) ±20 mA
DC Output Current, per pin (I
OUT
) ±25 mA
DC V
CC
or GND Current, per pin
(I
CC
) ±50 mA
Storage Temperature Range (T
STG
) 65°C to +150°C
Power Dissipation (P
D
) (Note 3) 600 mW S.O. Package only 500 mW
Lead Temperature (T
L
) (Soldering 10 second s) 260°C
Min Max Units
Supply Voltage (V
CC
)26V
DC Input or Output Voltage 0 V
CC
V
(V
IN
, V
OUT
)
Operating Temperature Range (T
A
) 40 +125 °C
Input Rise or Fall Times
(t
r
, tf) V
CC
= 2.0V 1000 ns
V
CC
= 4.5V 500 ns
V
CC
= 6.0V 400 ns
Symbol Parameter Conditions
V
CC
TA = 25°CTA = −40 to 85°CTA = −40 to 125°C
Units
Typ Guaranteed Limits
V
IH
Minimum HIGH Level 2.0V 1.5 1.5 1.5 V Input Voltage 4.5V 3.15 3.15 3.15 V
6.0V 4.2 4.2 4.2 V
V
IL
Maximum LOW Level 2.0V 0.5 0.5 0.5 V Input Voltage 4.5V 1.35 1.35 1.35 V
6.0V 1.8 1.8 1.8 V
V
OH
Minimum HIGH Level V
IN
= V
IL
Output Voltage |I
OUT
| 20 µA 2.0V 2.0 1.9 1.9 1.9 V
4.5V 4.5 4.4 4.4 4.4 V
6.0V 6.0 5.9 5.9 5.9 V
V
IN
= V
IL
|I
OUT
| 4.0 mA 4.5V 4.2 3.98 3.84 3.7 V
|I
OUT
| 5.2 mA 6.0V 5.7 5.48 5.34 5.2 V
V
OL
Maximum LOW Level V
IN
= VIH or V
IL
Output Voltage |I
OUT
| 20 µA 2.0V 0 0.1 0.1 0.1 V
4.5V 0 0.1 0.1 0.1 V
6.0V 0 0.1 0.1 0.1 V
V
IN
= VIH or V
IL
|I
OUT
| 4.0 mA 4.5V 0.2 0.26 0.33 0.4 V
|I
OUT
| 5.2 mA 6.0V 0.2 0.26 0.33 0.4 V
I
IN
Maximum Input V
IN
= VCC or GND 6.0V ±0.1 ±1.0 ±1.0 µA
Current
I
CC
Maximum Quiescent V
IN
= VCC or GND 6.0V 2.0 20 40 µA
Supply Current I
OUT
= 0 µA
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