Fairchild Semiconductor MJD45H11 Datasheet
MJD45H11
General Purpose Power and Switching Such
as Output or Driver Stages in Applications
D-PAK for Surface Mount Applications
• Load Formed for Surface Mount Application (No Suffix)
• Straight Lead (I-PAK: “-I” Suffix)
• Electrically Similar to Popular MJE45H
• Fast Switching Speeds
• Low Collector Emitter Saturation Voltage
PNP Epitaxial Silicon Transistor
11
D-PAK I-PAK
1.Base 2.Collector 3.Emitter
MJD45H11
Absolute Maximum Ratings
TC=25°C unless otherwise noted
Symbol Parameter Value Units
V
CEO
V
EBO
I
C
I
CP
PC
T
J
T
STG
Electrical Characteristics
Collector-Emitter Voltage - 80 V
Emitter-Base Voltage - 5 V
Collector Current (DC) - 8 A
Collector Current (Pulse) - 16 A
Collector Dissipation (TC=25°C) 20 W
Collector Dissipation (T
=25°C) 1.75 W
a
Junction Temperature 150 °C
Storage T emperature - 55 ~ 150 °C
TC=25°C unless otherwise noted
Symbol Parameter Test Condition Min. Typ. Max. Units
V
(sus) *Collector-Emitter Sustaining Voltage IC = - 30mA, IB = 0 - 80 V
CEO
I
CEO
I
EBO
hFE
(sat) *Collector-Emitter Saturation Voltage IC = - 8A, IB = - 0.4A - 1 V
V
CE
(on) *Base-Emitter Saturation Voltage IC = - 8A, IB = - 0.8A - 1.5 V
V
BE
f
T
Cob
tON
tSTG
tF
* Pulse Test: PW≤300µs, Duty Cycle≤2%
Collector Cut-off Current V
Emitter Cut-off Cu rr e nt V
*DC Current Gain V
= - 80V, IB = 0 - 10 µA
CE
= - 5V, IC = 0 - 50 µA
BE
= - 1V, IC = - 2A
CE
V
= - 1V, IC = - 4A
CE
60
40
Current Gain Bandwidth Product VCE= - 10A, IC = - 0.5A 40 MHz
Collector Capacitance V
Turn On Time IC = - 5A
Storage Time 500 ns
= - 10V, f = 1MHz 230 pF
CB
135 ns
= - IB2 = - 0.5A
I
B1
Fall Time 100 ns
©2003 Fairchild Semiconductor Corporation Rev. C2, July 2003
Typical Characteristics
MJD45H11
1000
100
10
, DC CURRENT GAIN
FE
h
1
-0.01 -0.1 -1 -10
IC[A], COLLECTOR CURRENT
Figure 1. DC current Gain Figure 2. Safe Operating Area
25
20
15
10
VCE = -1V
-100
ICP(max)
-10
IC(max)
-1
-0.1
[A], COLLECTOR CURRENT
C
I
-0.01
-1 -1 0 -100 -1000
100
µ
s
500
µ
s
1ms
5ms
DC
VCE[V], COLLECTOR-EMITTER VOLTAGE
5
[W], POWER DISSIPATION
C
P
0
0 25 50 75 100 125 150 175
TC[oC], CASE TEMPERATURE
Figure 3. Power Derating
©2003 Fairchild Semiconductor Corporation
Rev. C2, July 2003
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