Fairchild Semiconductor MJD350 Datasheet
MJD350
High Voltage Power Transistors
D-PAK for Surface Mount Applications
• Lead Formed for Surface Mount Applications (No Suffix)
• Straight Lead (I-PAK, “- I” Suffix)
PNP Epitaxial Silicon Transistor
11
D-PAK I-PAK
1.Base 2.Collector 3.Emitter
MJD350
Absolute Maximum Ratings
Symbol Parameter Value Units
V
V
V
I
I
P
T
T
CBO
CEO
EBO
C
CP
C
J
STG
Collector-Base Voltage - 300 V
Collector-Emitter Voltage - 300 V
Emitter-Base Voltage - 3 V
Collector Current (DC) - 0.5 A
Collector Current (Pulse) - 0.75 A
Collector Dissipation (TC = 25°C) 15 W
Collector Dissipation (T
Junction Temperature 150 °C
Storage T emperature - 65 ~ 150 °C
Electrical Characteristics
Symbol Parameter Test Condition Min. Max. Units
V
(sus) * Collector-Emitter Sustaining Voltage IC = 1mA, IB = 0 -300 V
CEO
I
CEO
I
EBO
h
FE
* Pulse Test: PW≤300µs, Duty Cycle≤2%
Collector Cut-off Current V
Emitter Cut-off Current V
* DC Current Gain V
TC=25°C unless otherwise noted
= 25°C) 1.56 W
a
TC=25°C unless otherwise noted
= -300V , IE =0 -0.1 mA
CB
= -3V, IC = 0 -0.1 mA
EB
= -10V , IC = -50mA 30 240
CE
©2001 Fairchild Semiconductor Corporation Rev. A2, June 2001
Typical Characteristics
MJD350
1000
100
10
, DC CURRENT GAIN
FE
h
1
-1 -10 -100 -1000
IC[A], COLLECTOR CURRENT
Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage
-1000
ICP(max)
IC(max)
-100
-10
[mA], COLLECTOR CURRENT
C
I
-1
-10 -100 -1000
VCE[V], COLLECTOR-EMITTER VOLTAGE
100
500
µ
s
µ
1ms
s
DC
VCE = -10V
-10
-1
-0.1
(sat)[V], SATURATION VOLTAGE
CE
(sat), V
BE
V
-0.01
-1 -10 -100 -1000
VBE(sat)
VCE(sat)
IC = 10 I
B
IC[A], COLLECTOR CURRENT
Collector-Emitter Saturation Voltage
24
21
18
15
12
9
6
[W], POWER DISSIPATION
C
P
3
0
0 25 50 75 100 125 150 175
TC[oC], CASE TEMPERATURE
Figure 3. Safe Operating Area Figure 4. Power Derating
©2001 Fairchild Semiconductor Corporation Rev. A2, June 2001
Loading...