Fairchild Semiconductor MJD32C, MJD32 Datasheet
MJD32/32C
General Purpose Amplifier Low Speed
Switching Applications
D-PAK for Surface Mount Applications
• Load Formed for Surface Mount Application (No Suffix)
• Straight Lead (I-PAK, “- I” Suffix)
• Electrically Similar to Popular TIP32 and TIP32C
PNP Epitaxial Silicon Transistor
11
D-PAK I-PAK
1.Base 2.Collector 3.Emitter
MJD32/32C
Absolute Maximum Ratings
TC=25°C unless otherwise noted
Symbol Parameter Value Units
V
CBO
Collector-Base Voltage
: MJD32
- 40
- 100
: MJD32C
V
CEO
Collector-Emitter Voltage
: MJD32
- 40
- 100
: MJD32C
V
EBO
I
C
I
CP
I
B
PC
T
J
T
STG
Electrical Characteristics
Emitter-Base Voltage - 5 V
Collector Current (DC) - 3 A
Collector Current (Pulse) - 5 A
Base Current - 1 A
Collector Dissipation (TC=25°C) 15 W
Collector Dissipation (T
=25°C) 1.56 W
a
Junction Temperature 150 °C
Storage Temperature - 65 ~ 150 °C
TC=25°C unless otherwise noted
Symbol Parameter Test Condition Min. Max. Units
(sus) * Collector-Emitter Sustaining Voltage
V
CEO
: MJD32
: MJD32C
I
CEO
Collector Cut-off Current
: MJD32
: MJD32C
I
CES
Collector Cut-off Current
: MJD32
: MJD32C
I
EBO
hFE
V
(sat) * Collector-Emitter Saturation Voltage IC = - 3, IB = - 375mA -1.2 V
CE
(on) * Base-Emitter ON Voltage V
V
BE
f
T
* Pulse Test: PW≤300µs, Duty Cycle≤2%
Emitter Cut-off Current V
* DC Current Gain V
Current Gain Bandwidth Product V
= - 30mA, IB = 0 -40
I
C
V
= - 40V, IB = 0
CE
= - 60V, IB = 0
V
CE
= - 40V, V
V
CE
V
= - 100V, V
CE
= - 5V, IC = 0 -1 mA
BE
= - 4V, IC = - 1A
CE
= - 4V, IC = - 3A
V
CE
= - 4A, IC = - 3A -1.8 V
CE
= -10V, IC = - 500mA 3 MHz
CE
BE
BE
= 0
= 0
-100
-50
-50
-20
-20
25
10 50
V
V
V
V
V
V
µA
µA
µA
µA
©2001 Fairchild Semiconductor Corporation Rev. A2, June 2001
Typical Characteristics
MJD32/32C
1000
100
10
, DC CURRENT GAIN
FE
h
1
-0.01 -0.1 -1 -10
IC[A], COLLECTOR CURRENT
Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage
1000
[pF], CAPACITANCE
ob
C
100
10
VCE = -2V
VCE(sat)
IC = 10 I
B
-10
-1
VBE(sat)
-0.1
(sat)[V], SATURATION VOLTAGE
CE
(sat), V
BE
V
-0.01
-1E-3 -0.01 -0.1 -1 -10
IC[A], COLLECTOR CURRENT
Collector-Emitter Saturation Voltage
IC = 10.I
B
1
tR, VCC=-30V
s], TURN ON TIME
µ
[
D
, t
R
t
tR, VCC=-10V
0.1
tD, VBE(off)=-2V
1
-0.1 -1 -10 -100
VCB[V], COLLECTOR-BASE VOLTAGE
Figure 3. Collector Capacitance Figure 4. Turn On Time
1
s], TURN OFF TIME
µ
[
STG
0.1
, t
F
t
-0.01 -0.1 -1 -10
IC[A], COLLECTOR CURRENT
Figure 5. Turn Off Time Figure 6. Safe Operating Area
©2001 Fairchild Semiconductor Corporation
tF, VCC=-30V
tF, VCC(off)=-10V
-0.01 -0.1 -1 -10
IC[A], COLLECTOR CURRENT
IC = 10.I
B
-10
ICP(max)
IC(max)
t
STG
-1
-0.1
[A], COLLECTOR CURRENT
C
I
-0.01
-1 -1 0 -100 -1000
100
µ
s
500
µ
1ms
s
DC
32
32C
VCE[V], COLLECTOR-EMITTER VOLTAGE
Rev. A2, June 2001
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