Fairchild Semiconductor MJD31, MJD31C Datasheet
MJD31/31C
General Purpose Amplifier
Low Speed Switching Applications
• Load Formed for Surface Mount Application (No Suffix)
• Straight Lead (I-PAK, “- I” Suffix)
• Electrically Similar to Popular TIP31 and TIP31C
NPN Epitaxial Silicon Transistor
11
D-PAK I-PAK
1.Base 2.Collector 3.Emitter
MJD31/31C
Absolute Maximum Ratings
TC=25°C unless otherwise noted
Symbol Parameter Value Units
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
PC
T
J
T
STG
Electrical Characteristics
Collector-Base Voltage
: MJD31
: MJD31C
40
100
Collector-Emitter Voltage
: MJDH31
: MJD31C
40
100
Emitter-Base Voltage 5 V
Collector Current (DC) 3 A
Collector Current (Pulse) 1 A
Base Current 1 A
Collector Dissipation (TC=25°C) 15 W
Collector Dissipation (T
=25°C) 1.56 W
a
Junction Temperature 150 °C
Storage T emperature - 65 ~ 150 °C
TC=25°C unless otherwise noted
Symbol Parameter Test Condition Min. Max. Units
(sus) * Collector-Emitter Sustaining Voltage
V
CEO
: MJD31
: MJD31C
I
CEO
Collector Cut-off Current
: MJD31
: MJD31C
I
CES
Collector Cut-off Current
: MJD31
: MJD31C
I
EBO
hFE
V
(sat) * Collector-Emitter Saturation Voltage IC = 3A, IB = 375mA 1.2 V
CE
(on) * Base-Emitter ON Voltage V
V
BE
f
T
* Pulse Test: PW≤300µs, Duty Cycle≤2%
Emitter Cut-off Current V
* DC Current Gain V
Current Gain Bandwidth Product V
= 30mA, IB = 0 40
I
C
100
V
= 40V, IB = 0
CE
= 60V, IB = 0
V
CE
= 40V, V
V
CE
V
= 100V, V
CE
= 5V, IC = 0 1 mA
BE
= 4V, IC = 1A
CE
= 4V, IC = 3A
V
CE
= 4A, IC = 3A 1.8 V
CE
= 10V, IC = 500mA 3 MHz
CE
BE
BE
= 0
= 0
25
10 50
50
50
20
20
V
V
V
V
V
V
µA
µA
µA
µA
©2001 Fairchild Semiconductor Corporation Rev. A2, June 2001
Typical Characteristics
MJD31/31C
1000
100
10
, DC CURRENT GAIN
FE
h
1
0.01 0.1 1 10
IC[A], COLLECTOR CURRENT
Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Volta ge
[pF], CAPACITANCE
ob
C
1000
100
10
VCE = 2V
VCE(sat)
IC = 10 I
B
10
1
VBE(sat)
0.1
(sat)[V], SATURATION VOLTAGE
CE
(sat), V
BE
V
0.01
1E-3 0.01 0.1 1 10
IC[A], COLLECTOR CURRENT
Collector-Emitter Saturation Voltage
tC = 10.I
B
1
tR, VCC=30V
[µs], TURN ON TIME
D
, t
0.1
R
t
tR, VCC=10V
tD, VBE(off)=2V
1
0.1 1 10 100
VCB[V], COLLECTOR BASE VOLTAGE
0.01 0.1 1 10
IC[A], COLLECTOR CURRENT
Figure 3. Collector Capacitance Figure 4. Turn On Time
100
µ
500
s
µ
s
1ms
DC
31
31C
t
1
s], TURN OFF TIME
µ
[
STG
0.1
,t
F
t
0.01 0.1 1 10
STG
tF, VCC=30V
tF, VCC(off)=10V
IC[A], COLLECTOR CURRENT
tC = 10.I
B
10
ICP(max)
IC(max)
1
0.1
[A], COLLECTOR CURRENT
C
I
0.01
1 10 100 1000
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 5. Turn Off Time Figure 6. Safe Operating
©2001 Fairchild Semiconductor Corporation Rev. A2, June 2001
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