Fairchild Semiconductor MJD29C, MJD29 Datasheet
MJD29/29C
General Purpose Amplifier
Low Speed Switching Applications
• Load Formed for Surface Mount Application (No Suffix)
• Straight Lead (I-PAK, “- I” Suffix)
• Electrically Similar to Popular TIP29 and TIP29C
NPN Epitaxial Silicon Transistor
11
D-PAK I-PAK
1.Base 2.Collector 3.Emitter
MJD29/29C
Absolute Maximum Ratings
TC=25°C unless otherwise noted
Symbol Parameter Value Units
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
PC
T
J
T
STG
Electrical Characteristics
Collector-Base Voltage
: MJD29
: MJD29C
40
100
Collector-Emitter Voltage
: MJD29
: MJD29C
40
100
Emitter-Base Voltage 5 V
Collector Current (DC) 1 A
Collector Current (Pulse) 3 A
Base Current 0.4 A
Collector Dissipation (TC=25°C) 15 W
Collector Dissipation (T
=25°C) 1.56 W
a
Junction Temperature 150 °C
Storage Temperature - 65 ~ 150 °C
TC=25°C unless otherwise noted
Symbol Parameter Test Condition Min. Max. Units
(sus) *Collector-Emitter Sustaining Voltage
V
CEO
: MJD29
: MJD29C
I
CEO
Collector Cut-off Current
: MJD29
: MJD29C
I
CES
Collector Cut-off Current
: MJD29
: MJD29C
I
EBO
hFE
V
(sat) *Collector-Emitter Saturation Voltage IC = 1A, IB = 125mA 0.7 V
CE
(on) *Base-Emitter ON Voltage V
V
BE
f
T
* Pulse Test: PW ≤ 300µs, Duty Cycle ≤ 2%
Emitter Cut-off Current V
*DC Current Gain V
Current Gain Bandwidth Product V
= 30mA, IB = 0 40
I
C
V
= 40V, IB = 0
CE
= 60V, IB = 0
V
CE
= 40V, V
V
CE
V
= 100V, V
CE
= 5V, IC = 0 1 mA
BE
= 4V, IC = 0.2A
CE
= 4V, IC = 1A
V
CE
= 4A, IC = 1A 1.3 V
CE
= 10V, IC = 200mA 3 MHz
CE
BE
BE
= 0
= 0
100
40
15 75
50
50
20
20
V
V
V
V
V
V
µA
µA
µA
µA
©2001 Fairchild Semiconductor Corporation Rev. A2, June 2001
Typical Characteristics
MJD29/29C
1000
100
10
, DC CURRENT GAIN
FE
h
1
0.01 0.1 1 10
IC[A], COLLECTOR CURRENT
Figure 1. DC current Gain Figure 2. Turn On Time
10
1
tR, VCC=10V
s],TURN ON TIME
µ
0.1
[
D
, t
R
t
0.01
0.01 0.1 1 10
IC[A], COLLECTOR CURRENT
tR, VCC=30V
tD, VBE(off)=2V
VCE = 2V
IC=10I
t
tF, VCC=30V
tF, VCC=10V
IC=10I
B
STG
10
1
s],TURN OFF TIME
0.1
µ
,[
STG
, t
F
t
0.01
0.01 0.1 1 10
IC[A], COLLECTOR CURR E NT
B
100
10
1
0.1
[A], COLLECTOR CURRENT
C
I
0.01
1 10 100 1000
100
µ
s
500
µ
1ms
DC
s
MJD29
MJD29C
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 3. Turn Off Time Figure 4. Safe Operating Area
20
15
10
5
[W], POWER DISSIPATION
C
P
0
0 25 50 75 100 125 150 175
TC[oC], CASE TEMPERATURE
Figure 5. Power Derating
©2001 Fairchild Semiconductor Corporation
Rev. A2, June 2001
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