Fairchild Semiconductor MJD122, MJD122T4, MJD122-1, MJD127, MJD127-1 Datasheet

Î

ON Semiconductor

Complementary Darlington Power Transistors

DPAK For Surface Mount Applications

NPN

MJD122

PNP

MJD127

*

Designed for general purpose amplifier and low speed switching

applications.

• Lead Formed for Surface Mount Applications in Plastic Sleeves

(No Suffix)

• Straight Lead Version in Plastic Sleeves (“–1” Suffix)

• Lead Formed Version Available in 16 mm Tape and Reel (“T4” Suffix)

• Surface Mount Replacements for 2N6040–2N6045 Series,

TIP120–TIP122 Series, and TIP125–TIP127 Series

• Monolithic Construction With Built–in Base–Emitter Shunt Resistors

• High DC Current Gain —

= 2500 (Typ) @ IC = 4.0 Adc

h

FE

• Complementary Pairs Simplifies Designs

MAXIMUM RATINGS

MJD122

Rating

Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous

ООООООООООО

Peak Base Current Total Power Dissipation @ TC = 25C

Derate above 25C

ООООООООООО

Total Power Dissipation* @ TA = 25C

Derate above 25C

Operating and Storage Junction

ООООООООООО

Temperature Range

THERMAL CHARACTERISTICS

Characteristic

Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient*

Symbol

V

CEO

V

CB

V

EB

I

C

ÎÎ

I

B

P

D

ÎÎ

P

D

TJ, T

stg

ÎÎ

Symbol

R

θ

JC

R

θ

JA

MJD127

100 100

5 8

ÎÎÎÎ

16

120

20

0.16

ÎÎÎÎ

1.75

0.014

–65 to +150

ÎÎÎÎ

Max

6.25

71.4

Unit

Vdc Vdc Vdc Adc

Î

mAdc Watts

W/C

Î

Watts W/C

C

Î

Unit

C/W C/W

*ON Semiconductor Preferred Device

SILICON

POWER TRANSISTORS

8 AMPERES

100 VOLTS

20 WATTS

CASE 369A–13

CASE 369–07

MINIMUM PAD SIZES

RECOMMENDED FOR

SURFACE MOUNTED

APPLICATIONS

0.190

4.826

0.165

4.191

2.54

0.100

3.0

0.118

Preferred devices are ON Semiconductor recommended choices for future use and best overall value.

 Semiconductor Components Industries, LLC, 2001

1 Publication Order Number:

November, 2001 – Rev. 5

0.243

6.172

0.063

1.6

inches

mm

MJD122/D

MJD122 MJD127

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ELECTRICAL CHARACTERISTICS (T

Characteristic

= 25C unless otherwise noted)

C

Symbol

OFF CHARACTERISTICS

Collector–Emitter Sustaining Voltage

ООООООООООООООООО

(I

= 30 mAdc, IB = 0)

C

Collector Cutoff Current

ООООООООООООООООО

= 50 Vdc, IB = 0)

(V

CE

Collector Cutoff Current

(V

= 100 Vdc, IE = 0)

CB

ООООООООООООООООО

Emitter Cutoff Current

(V

= 5 Vdc, IC = 0)

BE

V

CEO(sus)

ÎÎÎ

I

CEO

ÎÎÎ

I

CBO

ÎÎÎ

I

EBO

ON CHARACTERISTICS

DC Current Gain

ООООООООООООООООО

(I

= 4 Adc, VCE = 4 Vdc)

C

= 8 Adc, VCE = 4 Vdc)

(I

ООООООООООООООООО

C

Collector–Emitter Saturation Voltage

(I

= 4 Adc, IB = 16 mAdc)

C

ООООООООООООООООО

= 8 Adc, IB = 80 mAdc)

(I

C

Base–Emitter Saturation Voltage (1)

ООООООООООООООООО

(I

= 8 Adc, IB = 80 mAdc)

C

Base–Emitter On Voltage

ООООООООООООООООО

(I

= 4 Adc, VCE = 4 Vdc)

C

h

FE

ÎÎÎ

V

CE(sat)

ÎÎÎ

V

BE(sat)

ÎÎÎ

V

BE(on)

ÎÎÎ

DYNAMIC CHARACTERISTICS

Current–Gain–Bandwidth Product

(I

= 3 Adc, VCE = 4 Vdc, f = 1 MHz)

C

ООООООООООООООООО

Output Capacitance

(V

= 10 Vdc, IE = 0, f = 0.1 MHz) MJD127

CB

ООООООООООООООООО

MJD122

Small–Signal Current Gain

(I

= 3 Adc, VCE = 4 Vdc, f = 1 kHz)

ООООООООООООООООО

C

|hfe|

ÎÎÎ

C

ob

ÎÎÎ

h

fe

ÎÎÎ

(1) Pulse Test: Pulse Width  300 µs, Duty Cycle  2%. *These ratings are applicable when surface mounted on the minimum pad sizes recommended.

Min

100

ÎÎ

—

ÎÎ

—

ÎÎ

—

ÎÎ

1000

ÎÎ

100

—

ÎÎ

— —

ÎÎ

—

ÎÎ

4

ÎÎ

—

ÎÎ

—

300

ÎÎ

Max

—

ÎÎÎ

10

ÎÎÎ

10

ÎÎÎ

2

ÎÎÎ

12,000

ÎÎÎ

—

2

ÎÎÎ

4

4.5

ÎÎÎ

2.8

ÎÎÎ

—

ÎÎÎ

300

ÎÎÎ

200

—

ÎÎÎ

Unit

Vdc

ÎÎ

µAdc

ÎÎ

µAdc

ÎÎ

mAdc

—

ÎÎ

Vdc

ÎÎ

Vdc

ÎÎ

Vdc

ÎÎ

MHz

ÎÎ

pF

ÎÎ

—

ÎÎ

TAT

2.5

1.5

0.5

, POWER DISSIPATION (WATTS)

D

P

C

25

20

2

T

15

10

1

C

TA

SURFACE

MOUNT

5

0

25

50 75 100 125 150

T, TEMPERATURE (°C)

Figure 1. Power Derating

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MJD122 MJD127

0

TYPICAL ELECTRICAL CHARACTERISTICS

PNP MJD127 NPN MJD122

20,000

10,000

7000 5000

T

= 150°C

J

3000

2000

25°C

1000

, DC CURRENT GAIN

FE

700

h

500

-55°C

300 200

0.1 0.7

0.3 7 10

0.2

3

2.6 IC = 2 A

2.2

0.5 1

23 5

IC, COLLECTOR CURRENT (AMP)

4 A

6 A

20,000

VCE = 4 V

10,000

5000

3000 2000

1000

, DC CURRENT GAIN

FE

h

500

300 200

Figure 2. DC Current Gain

T

= 25°C

J

2.6

2.2

T

= 150°C

J

25°C

-55°C

0.2

0.1 0.7

0.3 7 10

0.5 1

IC, COLLECTOR CURRENT (AMP)

3

IC = 2 A

4 A

23 5

6 A

VCE = 4 V

T

= 25°C

J

1.8

1.4

, COLLECTOR-EMITTER VOLTAGE (VOLTS)

CE

1

V

0.3 0.5 1 735

0.7

2

, BASE CURRENT (mA)

I

B

3

T

= 25°C

J

2.5

2

1.5

VBE @ VCE = 4 V

V, VOLTAGE (VOLTS)

V

@ IC/IB = 250

BE(sat)

1

V

@ IC/IB = 250

0.5

0.2 30.1 0.70.3 1 5

CE(sat)

0.5 7210

, COLLECTOR CURRENT (AMP)

I

C

1.8

1.4

, COLLECTOR-EMITTER VOLTAGE (VOLTS)

CE

1

V

10 20 30

0.3 0.5 1 7352

0.7

Figure 3. Collector Saturation Region

3

2.5

2

V

@ IC/IB = 250

BE(sat)

1.5

V, VOLTAGE (VOLTS)

1

0.5

VBE @ VCE = 4 V

V

@ IC/IB = 250

CE(sat)

0.2 30.1 0.70.3 1 5

Figure 4. “On” Voltages

, BASE CURRENT (mA)

I

B

T

= 25°C

J

0.5 721

IC, COLLECTOR CURRENT (AMP)

10 20 30

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