Fairchild Semiconductor MCT4 Datasheet
0.048 (1.22)
0.028 (0.71)
45°
0.046 (1.16)
0.036 (0.92)
42
0.195 (4.96)
0.178 (4.52)
0.230 (5.84)
0.209 (5.31)
0.560 (14.22)
0.500 (12.70)
0.210 (5.34)
0.170 (4.32)
3
0.100 (2.54) DIA.
1
0.019 (0.48)
0.016 (0.41)
Ø4X
PACKAGE DIMENSIONS
FEATURES
• Hermetically package
• High current transfer ratio; typically 35%
• High isolation resistance; 10
11
ohms at 500 volts
• High voltage isolation emitter to detector
NOTES:
1. Dimensions for all drawings are in inches (mm).
2. Tolerance of ± .010 (.25) on all non-nominal dimensions
unless otherwise specified.
DESCRIPTION
The MCT4 is a standard four-lead, TO-18 package containing a GaAs infrared emitting diode optically coupled to an NPN silicon
planar phototransistor.
2001 Fairchild Semiconductor Corporation
DS300241 8/13/01 1 OF 6 www.fairchildsemi.com
SCHEMATIC
PHOTOTRANSISTOR OPTOCOUPLER
MCT4
ANODE
CATHODE
1
3
2
COLLECTOR
4 EMITTER
www.fairchildsemi.com 2 OF 6 8/13/01 DS300241
Parameter Symbol Rating Unit
Operating Temperature
T
OPR -55 to +125 °C
Storage Temperature T
STG
-65 to +150 °C
Soldering Temperature (Flow) T
SOL-F
260 for 10 sec °C
EMITTER
P
D
Power Dissipation at 25°C Ambient
(1)
90 mW
Continuous Forward Current I
F
40 mA
Reverse Voltage V
R
3V
Forward Current - Peak (1 µs pulse, 300 pps) IF(pk) 3.0 A
DETECTOR
P
D
Power Dissipation
25°C Ambient
(2)
200 mW
Collector to Emitter Voltage
V
CEO
30 V
Emitter to Collector Voltage V
ECO
7V
COUPLER
Total Power Dissipation
(3)
P
D
250 mW
Isolation Voltage 1000 VDC
ABSOLUTE MAXIMUM RATINGS
(TA= 25°C unless otherwise specified)
ELECTRICAL / OPTICAL CHARACTERISTICS (T
A
=25°C)
PHOTOTRANSISTOR OPTOCOUPLER
MCT4
Parameters Test Conditions Symbol Min Typ Max Units
EMITTER
Forward Voltage
I
F
= 40 mA V
F
1.30 1.50 V
Reverse Current
V
R
= 3.0 V
I
R
0.15 10 µA
Capacitance
V = 0 V
C
150
pF
DETECTOR
Breakdown Voltage
Collector to Emitter
I
C
= 1.0 mA, IF= 0 BV
CEO
30 V
Emitter to Collector IE= 100 µA, IF= 0 BV
ECO
712 V
Leakage Current
Collector to Emitter
V
CE
= 10 V, IF= 0 I
CEO
550nA
Capacitance
pF
Collector to Emitter
V
CE
= 0 C
CE
2
INDIVIDUAL COMPONENT CHARACTERISTICS
NOTE:
1. Derate power linearly 1.2 mW/°C above 25°C
2. Derate power linearly 2.67 mW/°C above 25°C
3. Derate power linearly 3.3 mW/°C above 25°C
Loading...