Fairchild Semiconductor MCT2201, MCT2200, MCT210, MCT2, MCT2E Datasheet
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DESCRIPTION
The MCT2XXX series optoisolators consist of a gallium arsenide
infrared emitting diode driving a silicon phototransistor in a 6-pin
dual in-line package.
APPLICATIONS
• Power supply regulators
• Digital logic inputs
• Microprocessor inputs
SCHEMATIC
FEATURES
• UL recognized (File # E90700)
• VDE recognized (File # 94766)
-Add option V for white package (e.g., MCT2V-M)
-Add option 300 for black package (e.g., MCT2.300)
• MCT2 and MCT2E are also available in white package
by specifying -M suffix, eg. MCT2-M
WHITE PACKAGE (-M SUFFIX)
BLACK PACKAGE (NO -M SUFFIX)
6
1
6
6
1
1
6
1
6
1
6
1
2001 Fairchild Semiconductor Corporation
DS300234 1/3/02 1 OF 13 www.fairchildsemi.com
PHOTOTRANSISTOR OPTOCOUPLERS
MCT2 MCT2E MCT210 MCT271
MCT2200 MCT2201 MCT2202
1
2
3NC
PIN 1. ANODE
2. CATHODE
3. NO CONNECTION
4. EMITTER
5. COLLECTOR
6. BASE
6
5
4
www.fairchildsemi.com 2 OF 13 1/3/02 DS300234
Parameter Symbol Device Value Units
TOTAL DEVICE
T
STG
ALL -55 to +150 °C
Storage Temperature
Operating Temperature T
OPR
ALL -55 to +100 °C
Lead Solder Temperature T
SOL
ALL 260 for 10 sec °C
Total Device Power Dissipation @ TA= 25°C
-M 250
mW
P
D
Non-M 260
Derate above 25°C
-M 2.94
mW/°C
Non-M 3.3
EMITTER
I
F
-M 60
mA
DC/Average Forward Input Current Non-M 100
Reverse Input Voltage V
R
ALL 3 V
Forward Current - Peak (300µs, 2% Duty Cycle) IF(pk) ALL 3 A
LED Power Dissipation @ TA= 25°CP
D
-M 120
mW
Non-M 150
Derate above 25°C
-M 1.41
mW/°C
Non-M 2.0
DETECTOR
I
C
ALL 50 mA
Collector Current
Collector-Emitter Voltage V
CEO
ALL 30 V
Detector Power Dissipation @ TA= 25°C ALL 150 mW
Derate above 25°C
P
D
-M 1.76
mW/°C
Non-M 2.0
ABSOLUTE MAXIMUM RATINGS
PHOTOTRANSISTOR OPTOCOUPLERS
MCT2 MCT2E MCT210 MCT271
MCT2200 MCT2201 MCT2202
ELECTRICAL CHARACTERISTICS
(TA= 25°CUnless otherwise specified.)
Parameter Test Conditions Symbol Device Min Typ** Max Unit
EMITTER MCT2/-M
MCT2E/-M
MCT271
Input Forward Voltage (I
F
= 20 mA) V
F
MCT2200 1.25 1.50 V
MCT2201
MCT2202
(T
A
= 0-70°C, IF= 40 mA) MCT210 1.33
MCT2/-M
MCT2E/-M
MCT271
Reverse Leakage Current (V
R
= 3.0 V) I
R
MCT2200 0.001 10 µA
MCT2201
MCT2202
(TA= 0-70°C, VR= 6.0 V) MCT210
DETECTOR (IC= 1.0 mA, IF= 0)
BV
CEO
ALL
30 100 V
Collector-Emitter Breakdown Voltage (T
A
= 0-70°C) MCT210
MCT2/-M
MCT2E/-M
MCT271
70 120
Collector-Base Breakdown Voltage (I
C
= 10 µA, IF= 0) BV
CBO
MCT2200 V
MCT2201
MCT2202
(T
A
= 0-70°C) MCT210 30
MCT2/-M
MCT2E/-M
MCT271
710
Emitter-Collector Breakdown Voltage (I
E
= 100 µA, IF= 0) BV
ECO
MCT2200 V
MCT2201
MCT2202
(TA= 0-70°C) MCT210 6 10
Collector-Emitter Dark Current
(V
CE
= 10 V, IF= 0)
I
CEO
ALL
150nA
(VCE= 5 V, TA= 0-70°C) 30 µA
Collector-Base Dark Current (VCB= 10 V, IF= 0) I
CBO
ALL 20 nA
Capacitance (VCE= 0 V, f = 1 MHz) C
CE
ALL 8 pF
INDIVIDUAL COMPONENT CHARACTERISTICS
PHOTOTRANSISTOR OPTOCOUPLERS
MCT2 MCT2E MCT210 MCT271
MCT2200 MCT2201 MCT2202
DS300234 1/3/02 3 OF 13 www.fairchildsemi.com
** Typical values at TA= 25°C
** Typical values at TA= 25°C
DC Characteristic Test Conditions Symbol Device Min Typ** Max Unit
(TA= 0-70°C) MCT210 150
(IF= 10 mA, VCE= 5 V)
MCT2200 20
MCT2201 100
MCT2202 63 125
Output Collector
MCT2
Current
CTR MCT2-M
20
%
(I
F
= 10 mA, VCE= 10 V) MCT2E
MCT2E-M
MCT271 45 90
(IF= 3.2 mA to 32 mA, VCE= 0.4 V)
MCT210 50
(T
A
= 0-70°C)
MCT2
MCT2-M
(I
C
= 2 mA, IF= 16 mA) MCT2E
Collector-Emitter
MCT2E-M
Saturation Voltage
MCT271 0.4 V
(IC= 16 mA, IF= 32 mA, TA= 0-70°C)
V
CE (SAT)
MCT210
MCT2200
(I
C
= 2.5 mA, IF= 10 mA) MCT2201
MCT2202
AC Characteristic (IF= 15 mA, VCC= 5 V, RL= 2 k1) MCT2 1.1
Saturated Turn-on Time (RB= Open) (Fig. 20)
t
on
MCT2E 1.1
from 5 V to 0.8 V (IF= 20 mA, VCC= 5 V, RL= 2 k1) MCT2 1.3
(RB= 100 k1 ) (Fig. 20) MCT2E 1.3
(IF= 15 mA, VCC= 5 V, RL= 2 k1) MCT2 50
Saturated Turn-off Time (RB= Open) (Fig. 20)
t
off
MCT2E 50
from SAT to 2.0 V (IF= 20 mA, VCC= 5 V, RL= 2 k1) MCT2 20
(RB= 100 k1 ) (Fig. 20) MCT2E 20
µs
Turn-on Time (IF= 10 mA, VCC= 10 V, RL= 100 1)t
on
MCT2-M
2
MCT2E-M
Turn-off Time (IF= 10 mA, VCC= 10 V, RL= 100 1)t
off
MCT2-M
2
MCT2E-M
Rise Time (IF= 10 mA, VCC= 10 V, RL= 100 1)t
r
MCT2-M
2
MCT2E-M
Fall Time (IF= 10 mA, VCC= 10 V, RL= 100 1)t
f
MCT2-M
1.5
MCT2E-M
TRANSFER CHARACTERISTICS
(TA= 25°C Unless otherwise specified.)
PHOTOTRANSISTOR OPTOCOUPLERS
MCT2 MCT2E MCT210 MCT271
MCT2200 MCT2201 MCT2202
www.fairchildsemi.com 4 OF 13 1/3/02 DS300234
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