Fairchild Semiconductor MBR745, MBR735, MBR750, MBR760 Datasheet

MBR735 - MBR760

MBR735 - MBR760

Features

• Low power loss, high efficiency.

• High surge capacity.

.113( 2.87)
.103( 2.62)

• For use in low voltage, high frequency

inverters, free wheeling, and polarity
protection applications.

• Metal silicon junction, majority carrier

conduction.

.16(4.06)

.14(3.56)

• High current capacity, low forward

voltage drop.

• Guard ring for over voltage protection.

TO-220AC

7.5 Ampere Schottky Barrier Rectifiers

Absolute Maximum Ratings* T

= 25°C unless otherwise noted

A

.037( 0.94)
.027( 0.68)

.412( 10.5)

MAX

12

.205( 5.20)
.195( 4.95)

DIA

.154( 3.91)

.148( 3.74)

Dimensions

inches (mm)

.56(14.22)

.53(13.46)

CASE Positive

.27(6.86)
.23(5.84)

are in:

.594( 15.1)
.587( 14.91)

PIN 1 +

PIN 2 -

Dimensions are in: inches (mm)

+

CASE

.185(4.70)
.175(4.44)

.025(0.64)
.014(0.35)

Symbol Parameter Value Units

I

O

i

f(repetitive)

i

f(surge)

P

D

R

θ

JA

R

θ

JL

T

stg

T

J

Average Rectified Current 7.5 A
Peak Repetitiv e Forward Current

(Rated V

, Square Wave, 20 KHz) @ TA = 105°C

R

15 A

Peak Forward Surge Current

8.3 ms single half-sine-wave

150 A

Superimp osed on rated load (JEDEC method)

Total Device Dissipation

Derate above 25°C

2.0

16.6

Thermal Resistan ce, Junction to Ambient 60
Thermal Resistance, Junction to Lead 3.0
Storage Temperature Range -65 to +175
Operating Junction Temperature -65 to +150

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

.11(2.79)
.10(2.54)

W

mW/°C

C/W

°

C/W

°

C

°

C

°

.055(1.40)
.045(1.14)

Electrical Characteristics T

= 25°C unless otherwise noted

A

Parameter Device Units

735 745 750 760

Peak Repetitive Reverse Voltage 35 45 50 60 V
Maximum RMS Voltage 24 31 35 42 V
DC Reverse Voltage (Rated VR)
Voltage Rate of Change (Rated VR)
Maximum Reverse Current

@ rated V

R

TA = 25°C

= 125°C

T

A

Maximum Forward Voltage
I
I
I
I

7.5 A, TC = 25°C

F =

7.5 A, TC = 125°C

F =

15 A, TC = 25°C

F =

15 A, TC = 125°C

F =

Peak Repetitive Reverse Surge Current

2.0 us Pulse Width, f = 1.0 KHz

1999 Fairchild Semiconductor Corporation

35 45 50 60 V

10,000 V/uS

0.1
15

-

0.57

0.84

0.72

-

0.5
50

0.75

0.65

-

1.0 0.5 A

MBR735 - MBR760, Rev. A

mA
mA

V
V
V
V

T ypical Characteristics

MBR735 - MBR760

Schotty Barrier Rectifier

(continued)

Forward Current Derating Curve

10

8

6

SINGLE PHASE

4

HALF WAVE
60HZ
RESISTIVE OR

2

INDUCT IVE L OAD

FORWARD CURRE NT (A)

.375" (9.00mm) LOAD
LENGTHS

0

0 25 50 75 100 125 150 175

MBR735-MBR745

AMBI ENT TEMPERA TURE ( C)

MBR750-MBR760

º

Forward Charact eristics

50

T = 125 C

º

10

1

0.1

FORWARD CURRE NT (A)

0.01

A

T = 25 C

º

A

MBR735-MBR745

MBR750-MBR760

Pulse Width = 300µS
2% Duty Cycl e

0 0.2 0.4 0.6 0.8 1 1.2

FORWARD VOLTAGE (V)

Non-Repetitive Surge Current

175

150

125

100

75

50

25

PEAK FORWARD SURGE CURRENT (A)

12 51020 50100

NUMBER OF CYCLES AT 60Hz

Reverse Characteris tics

50

10

MBR735-MBR745

1

MBR750-MBR760

0.1

MBR735-MBR745

0.01

REVERSE CURRENT (mA)

0.001
0 20406080100120140

PERCENT OF RA TED PEAK REVER SE VO LTAGE (%)

T = 125 C

º

A

T = 75 C

º

A

º

T = 25 C

A

MBR750-MBR760

Typical Junction Capacitance

5000

1000

100

JUNCTION CAPACITANC E (pF)

10

0.1 1 10 100

MBR750-MBR760

MBR735-MBR745

REVERSE VOLTAGE (V)

Transient Thermal Impedance

100

º

10

1

0.1

0.01 0.1 1 10 100

TRANSIEN T THERMAL IMP EDA NC E ( C/W)

T. PULSE DURA TION ( se c.)

MBR735 - MBR760, Rev. A