Fairchild Semiconductor MBR3035PT, MBR3060PT, MBR3050PT, MBR3045PT Datasheet

MBR3035PT - MBR3060PT

Features

• Low power loss, high efficiency.

• High surge capacity.

• For use in low voltage, high frequency

inverters, free wheeling, and polarity
protection applications.

• Metal silicon junction, majority carrier

conduction.

• High current capacity, low forward

voltage drop.

• Guard ring for over voltage protection.

PIN 1

PIN 3

30 Ampere Schottky Barrier Rectifiers

TO-3P/

TO-247AD

+

CASE
PIN 2

0.84(21.3)

0.82(20.8)

0.795(20.2)

0.775(19.7)

0.245(6.2)

0.225(5.7)

0.16(4.1)

0.14(3.5)

0.645(16.4)

0.625(15.9)

1

0.225(5.7)

0.205(5.2)

23

0.203(5.16)

0.193(4.90)

0.078(1.98)

0.323(8.2)

0.313(7.9)

0.086(2.18)

0.076(1.93)

0.127(3.22)

0.117(2.97)

0.048(1.22)

0.044(1.12)

10°

.17(4.3)

0.134(3.4)

0.114(2.9)

0.030 (0.76)

0.020 (0.51)

Dimensions are in: inches (mm)

30°

TYP

10°

BOTH SIDES

0.11 8(3.0)

0.108 (2.7)

MBR3035PT - MBR3060PT

Absolute Maximum Ratings* T

= 25°C unless otherwise noted

A

Symbol Parameter Value Units

I

O

i

f(repetitive)

i

f(surge)

P

D

R

θ

JL

T

stg

T

J

Average Rectified Current 30 A
Peak Repetitive Forward Curren t

(Rated V

, Square Wave, 20 KHz) @ TA = 130°C

R

30 A

Peak Forward Surge Current

8.3 ms single half-sine-wave

200 A

Superimposed on rated load (JEDEC method)

Total Dev ice Dissipation

Derate above 25°C

Thermal Resistance, Junction to Lead 1.4

3.0
25

mW/°C

C/W

°

Storage Temperature Range -65 to +175
Operating Junction Temperature -65 to +150

W

C

°

C

°

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

Electrical Characteristics T

= 25°C unless otherwise noted

A

Parameter Device Units

3035PT 3045PT 3050PT 3060PT

Peak Repetitive Reverse Voltage 35 45 50 60 V
Maximum RMS Voltage 24 31 35 42 V
DC Reverse Voltage (Rated VR)
Voltage Rate of Change (Rated VR)
Maximum Reverse Current

@ rated V

R

TA = 25°C
T

= 125°C

A

Maximum Forward Voltage
I
I
I
I

20 A, TC = 25°C

F =

20 A, TC = 125°C

F =

30 A, TC = 25°C

F =

30 A, TC = 125°C

F =

Peak Repetitive Reverse Surge
Current

2.0 us Pulsu Width, f = 1.0 KHz

35 45 50 60 V

10,000 V/uS

1.0
60

-

0.60

0.76

0.72

5.0

100

0.75

0.65

-

-

mA
mA

1.0 0.5 A

V
V
V
V

1999 Fairchild Semiconductor Corporation

MBR3035PT - MBR3060PT, Rev. A

T ypical Characteristics

MBR3035PT - MBR3060PT

Schotty Barrier Rectifier

(continued)

Forward Current Derating Curve

30

MBR3035PT-MBR3045PT

24

MBR3050PT-MBR3060PT

18

SINGLE PHASE
HALF WAVE

12

60HZ
RESISTIVE OR
INDUCT IVE L OAD

6

.375" (9.00mm) LOAD

FORWAR D CU RRENT (A)

LENGTHS

0

0 25 50 75 100 125 150 175

AMBI ENT TEMPERATURE ( C)

º

Forward Charact eristics

50

º

T = 150 C

º

A

10

1

0.1

FORWARD CURRE NT (A)

0.01
0 0.2 0.4 0.6 0.8 1 1.2

MBR3035PT-MBR3045PT

Pulse Width = 300µS
2% Duty Cycl e

FORWARD VOLTAGE (V)

T = 25 C

A

MBR3050PT-MBR3060PT

Non-Repetitive Surge Current

300

250

200

150

100

50

0

PEAK FORWARD SURGE CURRENT (A)

12 51020 50100

NUMBER OF CYCLES AT 60Hz

Reverse Characteris tics

50

MBR3035PT-MBR3045PT

10

MBR3050PT-MBR3060PT

1

0.1

MBR3035PT-MBR3045PT

0.01

REVERSE CURRENT (mA)

0.001
0 20406080100120140

PERCENT OF RA TED PEAK REVER SE VOLTAGE (%)

MBR3050PT-MBR3060PT

T = 125 C

º

A

º

T = 75 C

A

T = 25 C

º

A

Typical Junction Capacitance

5000

2000

1000

MBR3050PT-MBR3060PT

500

200

JUNCTION CAPACITANC E (pF)

100

0.1 1 10 100

REVERSE VOLTAGE (V)

MBR3035PT-MBR3045PT

Transient Thermal Impedance

100

º

10

1

0.1

0.01 0.1 1 10 100

TRANSIEN T THERMAL IMP EDANCE ( C/W)

T. PULSE DURA TION ( se c.)

MBR3035PT - MBR3060PT, Rev. A