Fairchild Semiconductor MBR2550CT, MBR2535CT, MBR2545CT Datasheet

Discrete POWER & Signal

Technologies

MBR2535CT - MBR2560CT

Features

• Low power loss, high efficiency.

• High surge capacity.

• For use in low voltage, high frequency

inverters, free wheeling, and polarity
protection applications.

• Metal silicon junction, majority carrier

TO-220AB

conduction.

• High current capacity, low forward

voltage drop.

• Guard ring for over voltage protection.

PIN 1

PIN 3

+

CASE
PIN 2

30 Ampere Schottky Barrier Rectifiers

Absolute Maximum Ratings* T

= 25°C unless otherwise noted

A

0.113(2.87)

0.103(2.62)

0.16(4.06)

0.14(3.56)

0.037(0.94)

0.027(0.68)

0.412(10.5)

MAX

0.154(3.91)

0.148(3.74)

0.27(6.86)

0.23(5.84)

0.594(15.1)

0.587(14.9)

2 3

1

0.56(14.22)

0.53(13.46)

0.105(2.67)

0.095(2.41)

Dimensions are in: inches (mm)

Symbol Parameter Value Units

I

O

i

f(repetitive)

i

f(surge)

P

D

R

θ

JA

R

θ

JL

T

stg

T

J

Average Rectified Current

.375 " lead length @ T

= 130°C

A

Peak Repetitive Forward Current

(Rated V

, Square Wave, 20 K Hz) @ TA = 130°C

R

Peak Forward Surge Current

8.3 ms single hal f-sine-wave
Superimposed on rated load (JEDEC method)

Total Device Dissipation

Derate above 25°C

Thermal Resistance, Junction to Am bi ent 60
Thermal Resistance, Junction to Lead 1.5
Storage Temperature Range -65 to +175
Operating Junction Temperat ure -65 to +150

30 A

30 A

150 A

2.0

16.6

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

0.185(4.70)

0.175(4.44)

0.025(0.64)

0.014(0.35)

mW/°C

°C/W
°C/W

0.11(2.79)

0.10(2.54)

W

°C
°C

0.055(1.40)

0.045(1.14)

MBR2535CT - MBR2560CT

Electrical Characteristics T

= 25°C unless otherwise noted

A

Parameter Device Units

2535CT 2545CT 2550CT 2560CT

Peak Repetitive Reverse V ol t age 35 45 50 60 V
Maximum RMS Voltage 24 31 35 42 V
DC Reverse Voltage (Rated VR)
Voltage Rate of Change (Rated VR)
Maximum Reverse Current

@ rated V

R

TA = 25°C

= 125°C

T

A

Maximum Forward Voltage
I
I
I
I

15 A, TC = 25°C

F =

15 A, TC = 125°C

F =

30 A, TC = 25°C

F =

30 A, TC = 125°C

F =

Peak Repetitive Revers e S u rge
Current

2.0 us Pulse Width, f = 1.0 KHz

1999 Fairchild Semiconductor Corporation

35 45 50 60 V

10,000 V/uS

0.2
40

-

-

0.82

0.73

1.0
50

0.75

0.65

-

-

1.0 0.5 A

MBR2535CT - MBR2560CT, Rev. A

mA
mA

V
V
V
V

T ypical Characteristics

MBR2535CT - MBR2560CT

Schotty Barrier Rectifier

(continued)

Forward Current Derating Curve

30

24

18

SINGLE PHASE
HALF WAVE

12

60HZ
RESISTIVE OR
INDUCT IVE L OAD

6

.375" (9.00mm) LOAD

FORWAR D CU RRENT (A)

LENGTHS

0

0 25 50 75 100 125 150 175

AMBI ENT TEMPERA TURE ( C)

º

Forward Charact eristics

50

º

T = 150 C

º

A

10

1

0.1

FORWARD CURRE NT (A)

0.01
0 0.2 0.4 0.6 0.8 1 1.2

MBR2535CT-MBR2545CT

Pulse Width = 300µS
2% Duty Cycle

FORWARD VOLTAGE (V)

T = 25 C

A

MBR2550CT-MBR2560CT

Non-Repetitive Surge Current

150

125

100

75

50

25

0

PEAK FORWARD SURGE CURRENT (A)

12 51020 50100

NUMBER OF CYCLES AT 60Hz

Reverse Characteris tics

50

MBR2535CT-MBR2545CT

10

MBR2550CT-MBR2560CT

1

0.1

MBR2535CT-MBR2545CT

0.01

REVERSE CURRENT (mA)

0.001
0 20406080100120140

PERCENT OF RA TED PEAK REVER SE VO LTAGE (%)

MBR2550CT-MBR2560CT

T = 125 C

º

A

º

T = 75 C

A

T = 25 C

º

A

Typical Junction Capacitance

5000

2000

1000

MBR2550CT-MBR2560CT

500

200

JUNCTION CAPACITANC E (pF)

100

0.1 1 10 100

REVERSE VOLTAGE (V)

MBR2535CT-MBR2545CT

Transient Thermal Impedance

100

º

10

1

0.1

0.01 0.1 1 10 100

TRANSIEN T THERMAL IMP EDA NC E ( C/W)

T. PULSE DU RA TION (sec .)

MBR2535CT - MBR2560CT, Rev. A