Fairchild Semiconductor MBR2060CT, MBR2050CT, MBR2035CT, MBR2045CT Datasheet

Discrete POWER & Signal

Technologies

MBR2035CT - MBR2060CT

Features

• Low power loss, high efficiency.

• High surge capacity.

• For use in low voltage, high frequency

inverters, free wheeling, and polarity
protection applications.

• Metal silicon junction, majority carrier

TO-220AB

conduction.

• High current capacity, low forward

voltage drop.

• Guard ring for over voltage protection.

PIN 1

PIN 3

+

CASE
PIN 2

20 Ampere Schottky Barrier Rectifiers

Absolute Maximum Ratings* T

= 25°C unless otherwise noted

A

0.113(2.87)

0.103(2.62)

0.16(4.06)

0.14(3.56)

0.037(0.94)

0.027(0.68)

0.412(10.5)

MAX

0.154(3.91)

0.148(3.74)

0.27(6.86)

0.23(5.84)

0.594(15.1)

0.587(14.9)

2 3

1

0.5 6(14.22)

0.5 3(13.46)

0.105(2.67)

0.095(2.41)

Dimensions are in: inches (mm)

Symbol Parameter Value Units

I

O

i

f(repetitive)

i

f(surge)

P

D

R

θ

JA

R

θ

JL

T

stg

T

J

Average Rectified Current

.375 " lead length @ T

= 135°C

A

Peak Repetitive Forward Current

(Rated V

, Square Wave, 20 K Hz) @ TA = 135°C

R

Peak Forward Surge Current

8.3 ms single hal f-sine-wave
Superimposed on rated load (JEDEC method)

Total Device Dissipation

Derate above 25°C

Thermal Resistance, Junction to Am bi ent 60
Thermal Resistance, Junction to Lead 2.0
Storage Temperature Range -65 to +175
Operating Junction Temperat ure -65 to +150

20 A

20 A

150 A

2.0

16.6

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

0.185(4.70)

0.175(4.44)

0.025(0.64)

0.014(0.35)

mW/°C

°C/W
°C/W

0.11(2.79)

0.10(2.54)

W

°C
°C

0.055(1.40)

0.045(1.14)

MBR2035CT-MBR2060CT

Electrical Characteristics T

= 25°C unless otherwise noted

A

Parameter Device Units

2035CT 2045CT 2050CT 2060CT

Peak Repetitive Reverse Voltage 35 45 50 60 V
Maximum RMS Voltage 24 31 35 42 V
DC Reverse Voltage (Rated VR)
Voltage Rate of Change (Rated VR)
Maximum Reverse Current

@ rated V

R

TA = 25°C

= 125°C

T

A

Maximum Forward Voltage
I
I
I
I

10 A, TC = 25°C

F =

10 A, TC = 125°C

F =

20 A, TC = 25°C

F =

20 A, TC = 125°C

F =

Peak Repetitive Reverse Surge
Current

2.0 us Pulse Width, f = 1.0 KHz

1999 Fairchild Semiconductor Corporation

35 45 50 60 V

10,000 V/uS

0.1
15

-

0.57

0.84

0.72

0.15
150

0.80

0.70

0.95

0.85

1.0 0.5 A

MBR2035CT - MBR2060CT, Rev. A

mA
mA

V
V
V
V

T ypical Characteristics

MBR2035CT-MBR2060CT

Schotty Barrier Rectifier

(continued)

Forward Current Derating Curve

20

16

12

SINGLE PHASE
HALF WAVE

8

60HZ
RESISTIVE OR
INDUCT IVE L OAD

4

.375" (9.00mm) LOAD

FORWARD CURRENT (A)

LENGTHS

0

0 25 50 75 100 125 150 175

AMBI ENT TEMPERA TU RE ( C)

º

Forward Charact eristics

50

T = 150 C

º

A

10

1

0.1

FORWARD CURRE NT (A)

0.01
0 0.2 0.4 0.6 0.8 1 1.2

FORWARD VOLTAGE (V)

MBR2035CT-MBR2045C T

MBR2050CT-MBR2060CT

Pulse Width = 300µS
2% Duty Cycle

T = 25 C

A

Non-Repetitive Surge Current

150

125

100

75

50

25

0

PEAK FORWARD SURGE CURRENT (A)

12 51020 50100

NUMBER OF CYCLES AT 60Hz

Reverse Characteris tics

50

º

MBR2035CT-MBR2045CT

10

1

MBR2050CT-MBR2060CT

0.1

MBR2035CT-MBR2045CT

0.01

REVERSE CURRENT (mA)

0.001
0 20406080100120140

PERCENT OF RA TED PEAK REVERSE VOLTAGE (%)

MBR2050CT-MBR2060CT

T = 125 C

º

A

º

T = 75 C

A

T = 25 C

º

A

Typical Junction Capacitance

5000

2000

1000

500

MBR2050CT-MBR2060CT

200

JUNCTION CAPACITANC E (pF)

100

0.1 1 10 100

REVERSE VOLTAGE (V)

MBR2035CT-MBR2045CT

Transient Thermal Impedance

100

º

10

1

0.1

0.01 0.1 1 10 100

TRANSIEN T THERMAL IMPEDANCE ( C/W)

T. PULSE DU RA TION (sec .)

MBR2035CT - MBR2060CT, Rev. A